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MT9P111

Onsemi

MT9P111 by Onsemi

The Onsemi MT9P111 is a CMOS image sensor with 1.4x1.4 um pixel size, offering 2592x1944 resolution and 60 dB dynamic range. Operating at 30 fps with a master clock of 96 MHz, it is ideal for applications requiring high-quality imaging in temperature ranges from -30 to 70 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

1k+

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Vyrian

USA . 1,853 parts In-Stock

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Digiode

USA . 996 parts In-Stock

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Kulean Microsystems

USA . 6,257 parts In-Stock

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SupplyDigital Components

Austria . 5,116 parts In-Stock

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TANS Electronics

Latvia . 2,747 parts In-Stock

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Problanco Electronics

Mexico . 2,660 parts In-Stock

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Corphita

USA . 441 parts In-Stock

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UHIMA Technologies

Türkiye . 232 parts In-Stock

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Corohmni

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Overview

Unlock the power of crystal-clear imaging with the MT9P111 by Onsemi. As a leader in image sensor technology, Onsemi delivers unparalleled quality and reliability in every product. The MT9P111 is perfect for applications where high-resolution images are a must, offering a wide range of benefits such as excellent sensitivity, dynamic range, and frame rate. Whether you're capturing moments, monitoring security, or enhancing machine vision systems, the MT9P111 provides exceptional value and performance that will exceed your expectations. Experience the difference with Onsemi today.

Feature Benefit Bullets

Pixel Size (um): 1.4X1.4

The small pixel size allows for high resolution images to be captured, making this sensor ideal for applications requiring detailed image quality.

Maximum Supply Voltage: 1.95 V

The higher maximum supply voltage provides flexibility in power options and ensures stable performance of the image sensor.

Master Clock: 96 MHz

The high master clock speed of 96 MHz enables fast data processing, resulting in real-time image capture and transmission.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology offers low power consumption and high sensitivity, making this image sensor suitable for battery-powered devices and low-light environments.

Minimum Supply Voltage: 1.7 V

The low minimum supply voltage helps in reducing power consumption and extends the battery life of devices using this image sensor.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70 °C, this image sensor can be used in a wide range of environmental conditions without compromising performance.

Horizontal Pixel: 2592

The high horizontal pixel count of 2592 results in sharp and detailed images with wide coverage, making this sensor suitable for applications requiring high-quality visuals.

Minimum Operating Temperature: -30 °C

The low minimum operating temperature of -30 °C ensures that this image sensor can function reliably even in cold environments.

Dynamic Range: 60 dB

The wide dynamic range of 60 dB allows the sensor to capture both bright and dark areas in the same scene with good contrast, making it suitable for a variety of lighting conditions.

Vertical Pixel: 1944

The vertical pixel count of 1944 complements the high horizontal pixel count, resulting in images with high resolution and clarity in both vertical and horizontal orientation.

Optical Format (inch): 1/4

The 1/4 inch optical format is a common standard size for image sensors, ensuring compatibility with a wide range of lenses and optical systems.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies the connectivity of the image sensor to external devices, making it easy to integrate into various systems and applications.

Frame Rate: 30 fps

The high frame rate of 30 frames per second allows for smooth and fluid video recording, making this image sensor ideal for applications requiring high-speed image capture.

Array Type: FRAME

The frame array type offers flexibility in capturing images and allows for efficient processing of image data, making this sensor suitable for applications requiring rapid image capture and analysis.

Sensitivity (V/lx.s): 0.5 V/lx.s

With a high sensitivity of 0.5 V/lx.s, this image sensor can capture clear images even in low-light conditions, making it suitable for night vision and low-light photography applications.

Mounting Feature: SURFACE MOUNT

The surface mount feature allows for easy and secure installation of the image sensor onto circuit boards or other surfaces, facilitating the integration of this sensor into compact electronic devices.

Technical Specifications

Image Sensors MT9P111 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.5-3.1V

Array Type:

FRAME

Dynamic Range:

60 dB

Frame Rate:

30 fps

Horizontal Pixel:

2592

Master Clock:

96 MHz

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Pixel Size (um):

1.4X1.4

Sensitivity (V/lx.s):

.5 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Vertical Pixel:

1944

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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