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KAF-1603-ABA-CD-AE

Onsemi

KAF-1603-ABA-CD-AE by Onsemi

The Onsemi KAF-1603-ABA-CD-AE is a CCD image sensor with 9x9 um pixel size, offering 1536 horizontal and 1024 vertical pixels. It operates b/w -60 to 60 °C with a dynamic range of 74 dB. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 2,081 parts In-Stock

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Vyrian

USA . 1,923 parts In-Stock

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SupplyDigital Components

Austria . 6,854 parts In-Stock

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Problanco Electronics

Mexico . 3,895 parts In-Stock

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TANS Electronics

Latvia . 1,752 parts In-Stock

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UHIMA Technologies

Türkiye . 886 parts In-Stock

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Kulean Microsystems

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Corphita

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Corohmni

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Overview

Capture the essence of every moment with the KAF-1603-ABA-CD-AE image sensor by Onsemi. Renowned for their superior quality and precision engineering, Onsemi's image sensors are trusted by industry professionals worldwide. Ideal for a wide range of applications, this sensor offers unparalleled value with its high performance capabilities and advanced technology. Elevate your imaging experience today with the KAF-1603-ABA-CD-AE and discover the endless possibilities it brings to your projects.

Feature Benefit Bullets

Pixel Size (um): 9X9

Smaller pixel size allows for higher resolution images to be captured with more detail.

Maximum Supply Voltage: 15.5 V

Higher maximum supply voltage allows for flexibility in power supply options and stable performance.

Body Width: 20.19 inch

Compact body width makes it easy to integrate into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their high-quality image capture capabilities and low noise performance.

Package Shape or Style: RECTANGULAR

Rectangular shape allows for efficient placement and mounting in a wide range of applications.

Minimum Supply Voltage: 14.5 V

Lower minimum supply voltage ensures energy efficiency and compatibility with a range of power sources.

Maximum Operating Temperature: 60 °C

Wide operating temperature range allows for use in varying environmental conditions.

Horizontal Pixel: 1536

High horizontal pixel count enables detailed and wide-angle image capture.

Minimum Operating Temperature: -60 °C

Low minimum operating temperature ensures reliable performance even in extreme cold conditions.

Housing: CERAMIC

Ceramic housing provides durability and thermal stability for long-term use.

Dynamic Range: 74 dB

High dynamic range allows for capturing a wide range of light intensities without losing detail.

Vertical Pixel: 1024

Vertical pixel count contributes to the overall resolution and quality of the images captured.

Body Length/Diameter: 34.54 mm

Compact body length/diameter ratio makes it suitable for space-constrained applications.

Data Rate: 10 Mbps

High data rate allows for fast and efficient transfer of image data for real-time processing.

Termination Type: SOLDER

Solder termination provides secure and reliable connections for long-lasting performance.

Array Type: FULL FRAME

Full-frame array ensures that the entire image sensor surface is used for capturing detailed images.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature allows for secure and stable installation in various applications.

Technical Specifications

Image Sensors KAF-1603-ABA-CD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 10 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Body Width:

20.19 inch

Body Length/Diameter:

34.54 mm

Data Rate:

10 Mbps

Dynamic Range:

74 dB

Horizontal Pixel:

1536

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-60 Cel

Package Shape or Style:

Pixel Size (um):

9X9

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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