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KAF-1001-AAA-CB-B2

Onsemi

KAF-1001-AAA-CB-B2 by Onsemi

The Onsemi KAF-1001-AAA-CB-B2 is a 24x24 um CCD image sensor with 1024x1024 pixels. It operates b/w -50 to 50 °C and has a dynamic range of 97 dB. Ideal for full-frame imaging applications, it features a spectral response of 300-1200 nm and data rate of 5 Mbps.

Median Price

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SupplyDigital Components

Austria . 7,338 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

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UHIMA Technologies

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TANS Electronics

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Corohmni

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Overview

Unlock the power of crystal-clear imaging with the KAF-1001-AAA-CB-B2 image sensor by Onsemi. As a leader in the industry, Onsemi delivers top-notch quality and reliability in every product. This cutting-edge sensor is perfect for a wide range of applications, providing unparalleled performance and accuracy. Experience the value and benefits of this high-quality sensor, bringing your projects to life with vivid detail and precision. Elevate your imaging solutions with the KAF-1001-AAA-CB-B2 and see the difference for yourself.

Feature Benefit Bullets

Pixel Size (um): 24X24

The small pixel size allows for a high resolution image sensor, making it ideal for applications where detailed images are required.

Maximum Supply Voltage: 17.5 V

The high maximum supply voltage provides flexibility in power supply options and ensures reliable performance in various operating conditions.

Body Width: 35.56 inch

The compact size of the body makes it easy to integrate this image sensor into different systems or devices without taking up much space.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD image sensors are known for their high-quality images and low noise, making them suitable for applications where image accuracy is critical.

Package Shape or Style: SQUARE

The square package shape simplifies the mounting and integration process, making it easier to align the sensor in the desired orientation.

Minimum Supply Voltage: 15 V

The low minimum supply voltage helps in reducing power consumption and extending the operational life of the image sensor.

Maximum Operating Temperature: 50 °C

The high maximum operating temperature range allows for reliable performance in various environmental conditions, making this sensor suitable for outdoor or industrial applications.

Horizontal Pixel: 1024

The high horizontal pixel count enables the sensor to capture detailed images with sharp clarity, making it suitable for high-resolution imaging applications.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature ensures that the sensor can still function in extreme cold conditions, making it versatile for a wide range of applications.

Housing: CERAMIC

The ceramic housing provides durability and thermal stability to the sensor, making it reliable for long-term use in various environments.

Dynamic Range: 97 dB

The high dynamic range allows the sensor to capture both bright and dark areas in the same scene accurately, ensuring high-quality images with great contrast.

Vertical Pixel: 1024

The high vertical pixel count complements the horizontal pixel count, providing a balanced resolution for capturing detailed images in both horizontal and vertical orientations.

Body Length/Diameter: 35.56 mm

The compact body length/diameter makes this sensor easy to handle and mount in various applications, offering flexibility in integration.

Spectral Response (nm): 300-1200

The wide spectral response range allows the sensor to capture images across different wavelengths of light, making it versatile for applications in various industries.

Data Rate: 5 Mbps

The high data rate enables the sensor to transfer image data quickly and efficiently, ideal for real-time imaging applications or high-speed data transmission.

Termination Type: SOLDER

The solder termination type ensures a secure and reliable connection between the sensor and external components, preventing signal loss or disconnection issues.

Array Type: FULL FRAME

The full-frame array type allows the sensor to capture the entire image in a single exposure, ensuring consistent image quality and eliminating the need for stitching multiple images together.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and provides a secure attachment of the sensor to the circuit board or system, ensuring stability during operation.

Technical Specifications

Image Sensors KAF-1001-AAA-CB-B2 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 11 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Body Width:

35.56 inch

Body Length/Diameter:

35.56 mm

Data Rate:

5 Mbps

Dynamic Range:

97 dB

Horizontal Pixel:

1024

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

24X24

Sensors or Transducers Type:

Spectral Response (nm):

300-1200

Maximum Supply Voltage:

17.5 V

Minimum Supply Voltage:

15 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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