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CYII5FM1300AB-SDCES

Onsemi

CYII5FM1300AB-SDCES by Onsemi

CYII5FM1300AB-SDCES by Onsemi is a CMOS image sensor with 1280x1024 pixels, 6.7um pixel size, and 40MHz master clock. It operates b/w -30 to 65 °C, outputs digital voltage from 0.50-2.02V, and has a dynamic range of 64dB. Ideal for full-frame applications in industrial imaging systems due to its high sensitivity and surface mounting feature.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,254 parts In-Stock

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Vyrian

USA . 1,521 parts In-Stock

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Native Components

USA . 159 parts In-Stock

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Northwest PG Solutions

USA . 965 parts In-Stock

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Kulean Microsystems

USA . 4,872 parts In-Stock

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TANS Electronics

Latvia . 4,748 parts In-Stock

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Problanco Electronics

Mexico . 4,615 parts In-Stock

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Corphita

USA . 2,418 parts In-Stock

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SupplyDigital Components

Austria . 1,376 parts In-Stock

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UHIMA Technologies

Türkiye . 739 parts In-Stock

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Corohmni

South Africa . 431 parts In-Stock

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Overview

Capture every moment in stunning detail with the CYII5FM1300AB-SDCES image sensor by Onsemi. Known for their top-notch quality and cutting-edge technology, Onsemi delivers exceptional performance in all their products. This image sensor, with its high resolution and wide range of applications, offers customers unparalleled value and benefits. Whether you're in the security, automotive, or industrial industry, this sensor provides crisp, clear images that will elevate your project to the next level. Choose Onsemi and experience the difference today.

Feature Benefit Bullets

Pixel Size (um): 6.7X6.7

Provides high resolution images and detailed information.

Maximum Supply Voltage: 4.5 V

Ensures stable power supply for optimal performance.

Master Clock: 40 MHz

High clock speed enables fast data processing and image capture.

Body Width: 9.29 inch

Compact size allows for easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology offers low power consumption and high image quality.

Package Shape or Style: RECTANGULAR

Simplifies installation and ensures compatibility with standard mounting setups.

Minimum Supply Voltage: 3 V

Allows for flexibility in power input while maintaining functionality.

Maximum Operating Temperature: 65 °C

Can operate efficiently in various environmental conditions.

Horizontal Pixel: 1280

Delivers high-resolution images with increased detail.

Output Range: 0.50-2.02V

Provides a wide range of output voltage for different applications.

Output Type: DIGITAL VOLTAGE

Facilitates easy digital signal processing and data transmission.

Minimum Operating Temperature: -30 °C

Maintains functionality in cold environments or during temperature fluctuations.

Maximum Operating Current: 60 mA

Efficient current usage for longer battery life and reduced power consumption.

Housing: CERAMIC

Provides durability and protection for the sensor components.

Dynamic Range: 64 dB

Generates high-quality images with excellent contrast and color accuracy.

Vertical Pixel: 1024

Enhances image resolution and clarity in vertical dimensions.

Body Length/Diameter: 10.15 mm

Compact design for easy integration and space-saving installations.

Optical Format (inch): 2/3

Compatible with standard optical formats for seamless integration.

Data Rate: 40 Mbps

Fast data transmission for real-time image processing and output.

Termination Type: SOLDER

Secure termination method for reliable electrical connections.

Output Interface Type: I2C INTERFACE

Enables easy communication with other digital devices and systems.

Frame Rate: 27 fps

Provides smooth video recording and high-speed image capture capabilities.

Array Type: FULL FRAME

Full frame array enhances image quality and ensures accurate representation.

Sensitivity (V/lx.s): 8.4 V/lx.s

High sensitivity for low-light conditions and improved image quality in various lighting environments.

Mounting Feature: SURFACE MOUNT

Easy surface mounting for quick and convenient installation on various surfaces.

Technical Specifications

Image Sensors CYII5FM1300AB-SDCES attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC SNAPSHOT SHUTTER, ROLLING SHUTTER

Array Type:

FULL FRAME

Body Width:

9.29 inch

Body Height:

.83 mm

Body Length/Diameter:

10.15 mm

Data Rate:

40 Mbps

Dynamic Range:

64 dB

Frame Rate:

27 fps

Horizontal Pixel:

1280

Housing:

CERAMIC

Master Clock:

40 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

65 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

2/3

Output Interface Type:

I2C INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

6.7X6.7

Sensitivity (V/lx.s):

8.4 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

4.5 V

Minimum Supply Voltage:

3 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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