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CYII4SM6600AA-QBC

Onsemi

CYII4SM6600AA-QBC by Onsemi

CYII4SM6600AA-QBC by Onsemi is a 3.5x3.5 um CMOS image sensor with 40 MHz master clock and 61 dB dynamic range. Ideal for full-frame array applications, it operates at 2.5-3.3V with a digital voltage output interface, offering sensitivity of 1.57 V/lx.s at temperatures ranging from 0 to 50 °C.

Median Price

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Lifecycle Status

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In-Stock Inventory

1k+

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Vyrian

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Digiode

USA . 66 parts In-Stock

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SupplyDigital Components

Austria . 7,261 parts In-Stock

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TANS Electronics

Latvia . 6,913 parts In-Stock

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Problanco Electronics

Mexico . 3,977 parts In-Stock

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Kulean Microsystems

USA . 3,880 parts In-Stock

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Corphita

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Northwest PG Solutions

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UHIMA Technologies

Türkiye . 801 parts In-Stock

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Native Components

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Corohmni

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Overview

Enhance your imaging projects with the CYII4SM6600AA-QBC by Onsemi, a cutting-edge image sensor that delivers exceptional quality and performance. Manufactured by Onsemi, a renowned leader in the industry, this sensor offers a wide range of applications and versatility. With its advanced features and reliable functionality, this sensor provides unmatched value and benefits to customers, ensuring seamless integration and superior results for all your imaging needs. Elevate your projects with the CYII4SM6600AA-QBC and experience the difference today.

Feature Benefit Bullets

Pixel Size (um) 3.5X3.5

Small pixel size allows for higher resolution images to be captured with greater detail.

Maximum Supply Voltage 3.3 V

Moderate maximum supply voltage ensures safe operation and compatibility with common power sources.

Master Clock 40 MHz

High master clock frequency enables fast and efficient data processing.

Body Width 24.13 inch

Wide body width provides a larger surface area for mounting and attaching to other components.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS sensor technology offers low power consumption and high image quality, making it ideal for various applications.

Body Height 3.04 mm

Low body height allows for compact and slim design of the image sensor module.

Package Shape or Style SQUARE

Square package shape provides a uniform and easy-to-mount form factor for the image sensor.

Minimum Supply Voltage 2.5 V

Low minimum supply voltage ensures energy efficiency and flexibility in power source options.

Maximum Operating Temperature 50 °C

High maximum operating temperature tolerance allows for reliable performance in various environmental conditions.

Output Range 0.50-2V

Wide output voltage range provides versatility in signal processing and compatibility with different systems.

Output Type DIGITAL VOLTAGE

Digital voltage output simplifies signal processing and integration with digital systems.

Minimum Operating Temperature 0 °C

Low minimum operating temperature ensures reliable performance in cold environments.

Maximum Operating Current 80 mA

Moderate maximum operating current consumption ensures energy efficiency and prevents overheating.

Housing CERAMIC, METAL-SEALED COFIRED

Durable and robust housing materials provide protection and longevity for the image sensor module.

Dynamic Range 61 dB

High dynamic range allows for clear and accurate representation of both bright and dark areas in images.

Body Length/Diameter 24.13 mm

Compact body length/diameter facilitates easy integration and placement within devices or systems.

Termination Type SOLDER

Solder termination type offers secure and reliable connections for input/output interfaces.

Output Interface Type 3-WIRE INTERFACE

3-wire interface type enables simple and efficient communication with external devices or controllers.

Frame Rate 5 fps

Moderate frame rate allows for smooth and real-time image capture and processing.

Array Type FULL FRAME

Full frame array type ensures complete coverage and accurate image capture without missing any details.

Sensitivity (V/lx.s) 1.57 V/lx.s

High sensitivity value enables the image sensor to capture clear and sharp images even in low light conditions.

Mounting Feature SURFACE MOUNT

Surface mounting feature simplifies installation and integration of the image sensor onto circuit boards or devices.

Technical Specifications

Image Sensors CYII4SM6600AA-QBC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ROLLING SHUTTER

Array Type:

FULL FRAME

Body Width:

24.13 inch

Body Height:

3.04 mm

Body Length/Diameter:

24.13 mm

Dynamic Range:

61 dB

Frame Rate:

5 fps

Housing:

CERAMIC, METAL-SEALED COFIRED

Master Clock:

40 MHz

Mounting Feature:

Maximum Operating Current:

80 mA

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

0 Cel

Output Interface Type:

3-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.5X3.5

Sensitivity (V/lx.s):

1.57 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

3.3 V

Minimum Supply Voltage:

2.5 V

Termination Type:

SOLDER

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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