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KAF-50100-AAA-JD-BA

Onsemi

KAF-50100-AAA-JD-BA by Onsemi

The Onsemi KAF-50100-AAA-JD-BA is a CCD image sensor with 6x6 um pixel size, offering a max supply voltage of 15.5V and a dynamic range of 70.2 dB. Ideal for applications requiring high-resolution imaging in environments with temperatures ranging from 0 to 60 °C.

Median Price

$4,964.820

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 19 parts In-Stock

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Verical

USA . 19 parts In-Stock

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$4,964.820

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19

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Digiode

USA . 2,053 parts In-Stock

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$4,716.579

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2,053

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Vyrian

USA . 2,089 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,769 parts In-Stock

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$4,468.338

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1,769

$4,468.338

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Corohmni

South Africa . 79 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Kulean Microsystems

USA . 2,690 parts In-Stock

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2,690

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TANS Electronics

Latvia . 2,639 parts In-Stock

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SupplyDigital Components

Austria . 1,008 parts In-Stock

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Problanco Electronics

Mexico . 888 parts In-Stock

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UHIMA Technologies

Türkiye . 427 parts In-Stock

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Overview

Capture every detail with the KAF-50100-AAA-JD-BA by Onsemi, a top-of-the-line image sensor designed to deliver superior quality and precision. Manufactured by industry leader Onsemi, this product boasts unparalleled performance and reliability. Ideal for a wide range of applications in the field of imaging technology, this sensor offers customers exceptional value, benefits, and advantages. Experience crystal-clear images and unrivaled accuracy with the KAF-50100-AAA-JD-BA - the ultimate choice for professionals seeking excellence in their work.

Feature Benefit Bullets

Pixel Size (um): 6X6

Smaller pixel size allows for higher resolution images to be captured, making this product ideal for high-quality imaging applications.

Maximum Supply Voltage: 15.5 V

Higher maximum supply voltage provides flexibility in power supply options and ensures stable performance even in varying voltage conditions.

Body Width: 50.8 inch

Compact body width makes it suitable for integration into small devices or systems where space is limited.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD image sensor technology offers high sensitivity and low noise performance, resulting in clear and detailed image output.

Maximum Operating Temperature: 60 °C

Wide operating temperature range allows this image sensor to be used in various environments without compromising performance.

Dynamic Range: 70.2 dB

High dynamic range ensures that the sensor can capture both bright and dark areas accurately, resulting in well-balanced images with good contrast.

Array Type: FULL FRAME

Full frame array provides a large image sensor area for capturing detailed and high-quality images, making it suitable for professional photography or scientific imaging applications.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature allows for secure and stable installation of the image sensor onto a PCB, ensuring reliable performance in different operating conditions.

Technical Specifications

Image Sensors KAF-50100-AAA-JD-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 31 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Body Width:

50.8 inch

Body Height:

3.46 mm

Body Length/Diameter:

59.61 mm

Data Rate:

18 Mbps

Dynamic Range:

70.2 dB

Horizontal Pixel:

8176

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

0 Cel

Package Shape or Style:

Pixel Size (um):

6X6

Sensors or Transducers Type:

Spectral Response (nm):

350-1100

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

6132

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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