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ASX340AT2C00XPED0-TRBR

Onsemi

ASX340AT2C00XPED0-TRBR by Onsemi

ASX340AT2C00XPED0-TRBR by Onsemi is a 5.6x5.6 um CMOS image sensor with 728H x 560V pixels, offering a dynamic range of 87 dB and operating at temperatures from -40 to 105 °C. It has a digital voltage output interface, operates at a max supply voltage of 1.95 V, and features a frame rate of 60 fps, making it ideal for applications requiring high-quality imaging in various environments.

Median Price

$7.641

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 2,000 parts In-Stock

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$7.641

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Vyrian

USA . 1,289 parts In-Stock

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$7.601

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Flip Electronics

USA . 6,000 parts In-Stock

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Digiode

USA . 1,838 parts In-Stock

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Corohmni

South Africa . 70 parts In-Stock

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$7.601

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70

$7.601

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Problanco Electronics

Mexico . 3,561 parts In-Stock

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Kulean Microsystems

USA . 3,329 parts In-Stock

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TANS Electronics

Latvia . 2,825 parts In-Stock

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SupplyDigital Components

Austria . 1,589 parts In-Stock

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Corphita

USA . 1,530 parts In-Stock

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Northwest PG Solutions

USA . 429 parts In-Stock

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UHIMA Technologies

Türkiye . 383 parts In-Stock

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Native Components

USA . 70 parts In-Stock

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Overview

Elevate your imaging experience with the ASX340AT2C00XPED0-TRBR by Onsemi. Crafted with precision and expertise, this image sensor offers unparalleled quality and performance in capturing crystal-clear images. Ideal for a wide range of applications, this sensor ensures exceptional results in every use. With a seamless integration process and reliable output, customers can trust in the value and benefits that this product brings to their projects. Trust in Onsemi's reputation for excellence and elevate your imaging capabilities with the ASX340AT2C00XPED0-TRBR.

Feature Benefit Bullets

Pixel Size (um): 5.6X5.6

The small pixel size allows for high resolution and detailed image capture.

Maximum Supply Voltage: 1.95 V

This ensures safe operation and reliability of the image sensor within specified voltage limits.

Master Clock: 27 MHz

The high frequency master clock enables fast processing of image data, resulting in real-time performance.

Body Width: 7.5 inch

The compact and slim body width makes it suitable for various applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS image sensors are known for their low power consumption and high image quality, making them a preferred choice in imaging devices.

Package Shape or Style: SQUARE

The square package shape allows for easy integration into circuit boards and provides a stable mounting platform.

Minimum Supply Voltage: 1.7 V

The low minimum supply voltage helps in conserving power and extending the battery life of devices.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature, the image sensor can withstand harsh environmental conditions without performance degradation.

Horizontal Pixel: 728

The high number of horizontal pixels contributes to the sharpness and clarity of images captured by the sensor.

Output Range: 0.84-1.96V

The wide output range allows for flexibility in signal processing and compatibility with different voltage levels in the system.

Output Type: DIGITAL VOLTAGE

Digital output simplifies data transmission and processing, enhancing the overall efficiency of the image sensor.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures the image sensor functions reliably in cold environments.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

The terminal finish materials provide good conductivity and corrosion resistance, ensuring long-term reliability.

Maximum Operating Current: 50 mA

The low operating current helps in minimizing power consumption and heat generation, contributing to energy efficiency.

Housing: PLASTIC

The plastic housing offers lightweight and durable protection for the image sensor, making it suitable for portable devices.

Dynamic Range: 87 dB

The wide dynamic range allows the sensor to capture both bright and dark areas in the scene accurately, producing high-quality images with more details.

Vertical Pixel: 560

The vertical pixel count adds to the overall resolution and image quality, making the sensor suitable for capturing clear and detailed images.

Body Length/Diameter: 7.5 mm

The compact body length/diameter facilitates easy integration and mounting of the image sensor in space-constrained applications.

Optical Format (inch): 1/4

The 1/4 inch optical format is a popular standard in image sensor size, ensuring compatibility with various optical systems and lenses.

Data Rate: 27 Mbps

The high data rate enables fast and seamless transfer of image data, crucial for real-time imaging applications.

Termination Type: SOLDER

Solder termination provides a reliable and secure connection, ensuring stable operation of the image sensor in different conditions.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies the connection and communication with external devices, enhancing the overall usability of the image sensor.

Frame Rate: 60 fps

The high frame rate ensures smooth and fluid motion capture, making the image sensor suitable for high-speed imaging applications.

Array Type: FRAME

The frame array type allows for simultaneous capture of multiple image frames, enabling advanced imaging functionalities and computational processing.

Mounting Feature: SURFACE MOUNT

The surface mount capability facilitates easy and secure attachment of the image sensor to PCBs, ensuring stable and reliable operation in various devices.

Technical Specifications

Image Sensors ASX340AT2C00XPED0-TRBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO HAVE ANALOG SUPPLY VOLTAGE 2.66-2.94 V, ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

7.5 inch

Body Height:

1.28 mm

Body Length/Diameter:

7.5 mm

Data Rate:

27 Mbps

Dynamic Range:

87 dB

Frame Rate:

60 fps

Horizontal Pixel:

728

Housing:

PLASTIC

JESD-609 Code:

e1

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

50 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

5.6X5.6

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

560

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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