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ASX340CS2C00SPED0-TPBR

Onsemi

ASX340CS2C00SPED0-TPBR by Onsemi

ASX340CS2C00SPED0-TPBR by Onsemi is a 5.6x5.6 um CMOS image sensor with 728H x 560V pixels, offering a dynamic range of 74.8 dB and sensitivity of 16.5 V/lx.s. It operates at temperatures ranging from -30 to 70 °C, with a max supply voltage of 1.95V and output interface type of 2-WIRE for applications in digital imaging systems.

Median Price

$8.750

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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DigiKey

USA . 898 parts In-Stock

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Flip Electronics (Authorized)

USA . 898 parts In-Stock

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Vyrian

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Digiode

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Native Components

USA . 356 parts In-Stock

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Northwest PG Solutions

USA . 2,116 parts In-Stock

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Corohmni

South Africa . 456 parts In-Stock

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Kulean Microsystems

USA . 5,312 parts In-Stock

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TANS Electronics

Latvia . 4,319 parts In-Stock

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SupplyDigital Components

Austria . 3,499 parts In-Stock

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Corphita

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Problanco Electronics

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UHIMA Technologies

Türkiye . 478 parts In-Stock

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Overview

Capture the world in stunning clarity with the ASX340CS2C00SPED0-TPBR image sensor by Onsemi. Renowned for their superior quality and reliability, Onsemi's image sensors are trusted by professionals worldwide for their exceptional performance. Ideal for a wide range of applications, from security cameras to medical imaging equipment, this image sensor delivers unparalleled value with its high sensitivity, wide dynamic range, and fast frame rate. Upgrade your imaging experience with the ASX340CS2C00SPED0-TPBR and see the difference for yourself.

Feature Benefit Bullets

Pixel Size (um): 5.6X5.6

The small pixel size results in high resolution images and allows for capturing detailed images.

Maximum Supply Voltage: 1.95 V

The low maximum supply voltage ensures efficient power consumption and reduces the risk of damage due to overvoltage.

Master Clock: 27 MHz

The high master clock frequency enables fast processing of image data and smooth operation.

Body Width: 7.5 inch

The compact body width makes the sensor suitable for integration into various devices without occupying much space.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors offer low noise, high sensitivity, and are cost-effective compared to other sensor types.

Dynamic Range: 74.8 dB

The wide dynamic range allows the sensor to capture both bright and dark areas with high fidelity and detail.

Frame Rate: 60 fps

The high frame rate ensures smooth and fluid video recording without motion blur.

Mounting Feature: SURFACE MOUNT

The surface mount feature makes it easy to mount the sensor on PCBs, simplifying the integration process.

Technical Specifications

Image Sensors ASX340CS2C00SPED0-TPBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER; IT ALSO OPERATES AT 2.8 V ANALOG NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

7.5 inch

Body Height:

1.22 mm

Body Length/Diameter:

7.5 mm

Dynamic Range:

74.8 dB

Frame Rate:

60 fps

Horizontal Pixel:

728

Housing:

PLASTIC

JESD-609 Code:

e1

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

50 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

5.6X5.6

Sensitivity (V/lx.s):

16.5 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

560

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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