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AR1335HSSC11SMAA0-DPBR

Onsemi

AR1335HSSC11SMAA0-DPBR by Onsemi

Onsemi's AR1335HSSC11SMAA0-DPBR is a 1/3.2" CMOS image sensor with 4208x3120 pixels, offering a high dynamic range of 69 dB. Operating at 48 MHz master clock, it provides digital voltage output via a 2-wire interface. Ideal for applications requiring full-frame arrays and surface mounting features at a supply voltage range of 1.14V to 1.3V.

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Lifecycle Status

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1k+

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Vyrian

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Digiode

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Native Components

USA . 717 parts In-Stock

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Northwest PG Solutions

USA . 2,319 parts In-Stock

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AZTECH Wire

Italy . 946 parts In-Stock

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Kepictronics

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Kulean Microsystems

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TANS Electronics

Latvia . 2,659 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

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UHIMA Technologies

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Corphita

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Overview

Capture every detail with the AR1335HSSC11SMAA0-DPBR image sensor by Onsemi. Renowned for its exceptional quality and reliability, Onsemi offers a wide range of applications for their cutting-edge image sensors. From security cameras to medical imaging devices, this sensor provides crystal-clear images with unparalleled accuracy. Experience the value and benefits of this top-of-the-line product, delivering superior performance and unmatched precision for all your imaging needs. Elevate your projects with the AR1335HSSC11SMAA0-DPBR and witness the difference that Onsemi's expertise can make.

Feature Benefit Bullets

Pixel Size (um): 1.1

Small pixel size allows for higher resolution images with more detail.

Maximum Supply Voltage: 1.3 V

Efficient power usage with a relatively low maximum supply voltage.

Master Clock: 48 MHz

High master clock frequency for fast data processing and image capture.

Body Width: 10 inch

Compact size makes it easy to integrate into various devices or systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology provides high image quality and low power consumption.

Body Height: 1.325 mm

Slim profile for fitting into tight spaces or thin devices.

Package Shape or Style: SQUARE

Square shape for easy mounting and alignment during assembly.

Minimum Supply Voltage: 1.14 V

Low minimum supply voltage for energy efficiency and longer battery life.

Horizontal Pixel: 4208

High horizontal pixel count for detailed and sharp images.

Output Type: DIGITAL VOLTAGE

Digital output voltage for easy interfacing with other digital systems.

Housing: CERAMIC

Durable ceramic housing for protection and longevity of the sensor.

Dynamic Range: 69 dB

Wide dynamic range for capturing both bright and dark areas in a scene.

Vertical Pixel: 3120

High vertical pixel count for clear and detailed images.

Body Length/Diameter: 10 mm

Compact body length/diameter for easy integration and space-saving.

Optical Format (inch): 1/3.2

Suitable optical format for capturing high-quality images.

Termination Type: SOLDER

Solder termination for secure and reliable connections.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface for easy communication and integration with other systems.

Frame Rate: 30 fps

High frame rate for smooth and fluid motion capture.

Array Type: FULL FRAME

Full-frame array for capturing the entire image with no cropping or loss of data.

Mounting Feature: SURFACE MOUNT

Surface mount feature for easy and secure installation on PCBs or other surfaces.

Technical Specifications

Image Sensors AR1335HSSC11SMAA0-DPBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

MECHANICAL SHUTTER; IT ALSO OPERATES AT ANALOG VOLTAGE OF 2.6 V TO 2.9 V

Array Type:

FULL FRAME

Body Width:

10 inch

Body Height:

1.325 mm

Body Length/Diameter:

10 mm

Dynamic Range:

69 dB

Frame Rate:

30 fps

Horizontal Pixel:

4208

Housing:

CERAMIC

Master Clock:

48 MHz

Mounting Feature:

Optical Format (inch):

1/3.2

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

1.1

Sensors or Transducers Type:

Maximum Supply Voltage:

1.3 V

Minimum Supply Voltage:

1.14 V

Termination Type:

SOLDER

Vertical Pixel:

3120

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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