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11KAI-04070-FBA-JD-BA

Onsemi

11KAI-04070-FBA-JD-BA by Onsemi

The Onsemi 11KAI-04070-FBA-JD-BA is an image sensor with 2048x2048 pixels, 7.4um pixel size, and 70.5dB dynamic range. It operates b/w -50 to 70 °C and has a max supply voltage of 15.5V. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,890 parts In-Stock

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1,890

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Digiode

USA . 1,388 parts In-Stock

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1,388

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Distributors (Availability)

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Native Components

USA . 840 parts In-Stock

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$0.055

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$0.053

840

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$0.053

SupplyDigital Components

Austria . 7,536 parts In-Stock

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TANS Electronics

Latvia . 7,299 parts In-Stock

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Kulean Microsystems

USA . 6,220 parts In-Stock

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Corphita

USA . 2,125 parts In-Stock

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Problanco Electronics

Mexico . 1,985 parts In-Stock

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Northwest PG Solutions

USA . 858 parts In-Stock

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858

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UHIMA Technologies

Türkiye . 407 parts In-Stock

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Corohmni

South Africa . 293 parts In-Stock

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Overview

Capture the world in stunning detail with the 11KAI-04070-FBA-JD-BA Image Sensor by Onsemi. Crafted with precision and expertise, this sensor offers unparalleled quality and reliability. Ideal for a wide range of applications, from industrial imaging to surveillance systems, this sensor provides exceptional performance and clarity. Experience the value of superior image capture with the Onsemi 11KAI-04070-FBA-JD-BA - where excellence meets innovation.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

The small pixel size allows for high resolution images with great detail and clarity.

Maximum Supply Voltage: 15.5 V

Allows for flexibility in power supply options and compatibility with a range of devices.

Body Width: 29 inch

Compact size makes it easy to integrate into various applications without taking up too much space.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD technology provides high-quality image capture and accurate color reproduction.

Body Height: 3 mm

Low profile design enables the sensor to be installed in tight spaces or slim devices.

Package Shape or Style: RECTANGULAR

Simplifies the integration process and ensures compatibility with standard mounting options.

Minimum Supply Voltage: 14.5 V

Provides a stable power supply for consistent performance and reliable operation.

Maximum Operating Temperature: 70 °C

Can withstand high temperatures, suitable for use in various environments and conditions.

Horizontal Pixel: 2048

High pixel count allows for detailed and high-resolution image capture.

Minimum Operating Temperature: -50 °C

Capable of operating in low temperatures, making it suitable for a wide range of applications.

Maximum Operating Current: 11 mA

Low power consumption ensures energy efficiency and longer battery life.

Dynamic Range: 70.5 dB

Provides a wide dynamic range, capturing both bright and dark details in the image.

Vertical Pixel: 2048

High pixel count enhances image resolution and detail in both horizontal and vertical aspects.

Body Length/Diameter: 40 mm

Compact size and shape facilitate easy installation and integration into various devices.

Optical Format (inch): 4/3

Standard optical format offers compatibility with a wide range of lenses and accessories.

Termination Type: SOLDER

Secure solder termination ensures reliable connection and long-term performance.

Frame Rate: 28 fps

High frame rate enables smooth and fluid video recording and playback.

Array Type: INTERLINE

Interline sensor design reduces image distortion and provides cleaner and sharper images.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting offers secure attachment and stability in various applications.

Technical Specifications

Image Sensors 11KAI-04070-FBA-JD-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 8.7 MICRO VOLT PER ELECTRON LOW, 33 MICRO VOLT PER ELECTRON HIGH

Array Type:

INTERLINE

Body Width:

29 inch

Body Height:

3 mm

Body Length/Diameter:

40 mm

Dynamic Range:

70.5 dB

Frame Rate:

28 fps

Horizontal Pixel:

2048

Mounting Feature:

Maximum Operating Current:

11 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

4/3

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2048

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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