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MT9T013D00STC

Onsemi

MT9T013D00STC by Onsemi

The Onsemi MT9T013D00STC is a CMOS image sensor with 1.75x1.75 um pixel size, offering 2048 (H) x 1536 (V) resolution. It operates at a max supply voltage of 1.9 V and has a master clock of 72 MHz. Ideal for applications requiring high-resolution imaging at temperatures ranging from -30 to 70 °C.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 2,883 parts In-Stock

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Vyrian

USA . 2,243 parts In-Stock

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TANS Electronics

Latvia . 7,727 parts In-Stock

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SupplyDigital Components

Austria . 3,821 parts In-Stock

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Kulean Microsystems

USA . 2,993 parts In-Stock

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Corphita

USA . 2,616 parts In-Stock

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Problanco Electronics

Mexico . 1,405 parts In-Stock

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UHIMA Technologies

Türkiye . 729 parts In-Stock

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Corohmni

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Overview

Unleash the power of high-quality imaging with the Onsemi MT9T013D00STC Image Sensor. Crafted by a trusted manufacturer, this sensor offers unparalleled performance and reliability in capturing stunning visuals. Ideal for a wide range of applications, from security cameras to medical imaging devices, this sensor delivers crisp images with exceptional clarity. Dive into a world of endless possibilities with the Onsemi MT9T013D00STC Image Sensor and experience the ultimate in imaging technology.

Feature Benefit Bullets

Pixel Size (um): 1.75X1.75

Small pixel size allows for high resolution imaging, making this image sensor suitable for capturing detailed images.

Maximum Supply Voltage: 1.9 V

With a relatively low maximum supply voltage, this image sensor is energy-efficient and suitable for portable devices.

Master Clock: 72 MHz

High master clock frequency enables fast data processing and readout, resulting in real-time image capturing.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors are known for their low power consumption, making this product ideal for battery-operated devices.

Package Shape or Style: SQUARE

Square package shape allows for easy integration into electronic devices and provides a compact form factor.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage ensures the image sensor can operate efficiently even with minimal power input.

Maximum Operating Temperature: 70 °C

High maximum operating temperature range makes this image sensor suitable for various environmental conditions.

Horizontal Pixel: 2048

High horizontal pixel count allows for wide-angle imaging and high-resolution output.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies the data processing and transmission, ensuring accurate and reliable image capture.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature range allows the image sensor to function in cold environments without performance degradation.

Dynamic Range: 39.2 dB

High dynamic range enables the image sensor to capture a wide range of light intensities, resulting in detailed images with good contrast.

Vertical Pixel: 1536

High vertical pixel count enables the image sensor to capture detailed images with excellent clarity.

Optical Format (inch): 1/4

1/4 inch optical format provides good optical performance and compatibility with various lenses.

Data Rate: 72 Mbps

High data rate allows for fast and efficient transfer of image data, ensuring real-time image processing.

Termination Type: SOLDER

Solder termination type provides a reliable and secure connection, ensuring the longevity and durability of the image sensor.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies the connection and communication with other devices, enhancing the overall usability of the image sensor.

Frame Rate: 30 fps

High frame rate enables smooth and continuous image capture, suitable for video recording and fast-moving scenes.

Array Type: FRAME

Frame array type allows for efficient image processing and data handling, ensuring accurate and high-quality output.

Mounting Feature: SURFACE MOUNT

Surface mounting feature simplifies the installation and integration of the image sensor onto circuit boards, saving space and reducing assembly time.

Technical Specifications

Image Sensors MT9T013D00STC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO HAVE ANALOG SUPPLY VOLTAGE 2.4-3.1 V, ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Data Rate:

72 Mbps

Dynamic Range:

39.2 dB

Frame Rate:

30 fps

Horizontal Pixel:

2048

Master Clock:

72 MHz

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

1.75X1.75

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1536

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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