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KLI-4104-DAA-CP-AE

Onsemi

KLI-4104-DAA-CP-AE by Onsemi

KLI-4104-DAA-CP-AE by Onsemi is an Image Sensor with 10x10 um pixel size, 4134 horizontal and vertical pixels. It operates b/w 0-70 °C, has a dynamic range of 60 dB, and outputs analog voltage in the range of 1.50-1.70V. This sensor is ideal for applications requiring high-resolution imaging such as industrial machine vision systems or medical imaging devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

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1k+

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Vyrian

USA . 1,935 parts In-Stock

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Digiode

USA . 587 parts In-Stock

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Kulean Microsystems

USA . 7,891 parts In-Stock

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TANS Electronics

Latvia . 4,301 parts In-Stock

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Corphita

USA . 1,202 parts In-Stock

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UHIMA Technologies

Türkiye . 967 parts In-Stock

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SupplyDigital Components

Austria . 899 parts In-Stock

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Problanco Electronics

Mexico . 706 parts In-Stock

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Corohmni

South Africa . 356 parts In-Stock

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Overview

Unlock a world of vivid imaging possibilities with the KLI-4104-DAA-CP-AE by Onsemi. As a leading manufacturer of image sensors, Onsemi delivers top-quality products that guarantee exceptional performance and reliability. Designed for a wide range of applications, this CCD image sensor offers unparalleled value with its high dynamic range, precise output range, and fast data rate. Elevate your imaging projects with the KLI-4104-DAA-CP-AE and experience the superior benefits and advantages it brings to your work.

Feature Benefit Bullets

Pixel Size (um): 10X10

The small pixel size allows for high resolution and detailed images to be captured by the sensor.

Maximum Supply Voltage: 15.5 V

The high supply voltage ensures optimal performance and stability of the image sensor.

Body Width: 10.16 inch

The compact body width makes it easy to integrate the sensor into various devices and applications.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD image sensors are known for their high-quality image capture capabilities, making this product suitable for applications requiring superior image quality.

Package Shape or Style: RECTANGULAR

The rectangular package shape allows for easy mounting and integration of the image sensor.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage ensures energy efficiency and prolongs the lifespan of the sensor.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature range allows the sensor to be used in various environmental conditions without overheating.

Output Range: 1.50-1.70V

The narrow output range ensures consistent and accurate output signals from the sensor.

Output Type: ANALOG VOLTAGE

Analog voltage output is commonly used in imaging applications and provides compatibility with a wide range of devices.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature enables the sensor to function effectively even in cold environments.

Housing: CERAMIC

The ceramic housing provides durability and protection for the sensitive components of the image sensor.

Dynamic Range: 60 dB

A high dynamic range allows the sensor to capture a wide range of light intensities, resulting in detailed images with accurate color reproduction.

Data Rate: 30 Mbps

The high data rate enables fast data transfer and processing, making this sensor suitable for real-time imaging applications.

Termination Type: SOLDER

Solder terminations provide a reliable and secure connection for the sensor, ensuring stable performance over time.

Array Type: LINEAR

Linear arrays are ideal for capturing one-dimensional images with high spatial resolution and uniformity.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation and replacement of the sensor, making it a convenient choice for device manufacturers.

Technical Specifications

Image Sensors KLI-4104-DAA-CP-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

SENSITIVITY IS 14 UV/ELECTRON

Array Type:

LINEAR

Body Width:

10.16 inch

Body Height:

3.81 mm

Body Length/Diameter:

60.96 mm

Data Rate:

30 Mbps

Dynamic Range:

60 dB

Horizontal Pixel:

4134

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

10X10

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

4134

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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