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MT9J003T12STCV

Onsemi

MT9J003T12STCV by Onsemi

Onsemi's MT9J003T12STCV image sensor features 1.67x1.67 um pixel size, 48 MHz master clock, and 3856 horizontal pixels. Ideal for high-speed imaging applications with a frame rate of 60 fps and a dynamic range of 65.2 dB.

Median Price

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Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

1k+

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Vyrian

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Digiode

USA . 1,325 parts In-Stock

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Problanco Electronics

Mexico . 6,783 parts In-Stock

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SupplyDigital Components

Austria . 3,333 parts In-Stock

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TANS Electronics

Latvia . 2,187 parts In-Stock

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Corphita

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Kulean Microsystems

USA . 1,675 parts In-Stock

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UHIMA Technologies

Türkiye . 660 parts In-Stock

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Corohmni

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Overview

Capture every moment with the MT9J003T12STCV Image Sensor by Onsemi. Designed with precision and cutting-edge technology, this sensor delivers unparalleled quality and performance. From high-resolution imaging to fast data rates, this sensor offers endless possibilities for applications in photography, security systems, automotive cameras, and more. Trust Onsemi's reputation for excellence and experience the value and benefits that this top-of-the-line product brings to your projects. Elevate your imaging experience with the MT9J003T12STCV Image Sensor today.

Feature Benefit Bullets

Pixel Size (um): 1.67X1.67

The small pixel size allows for high resolution images to be captured with precise details.

Maximum Supply Voltage: 1.9 V

With a higher maximum supply voltage, this image sensor can operate efficiently without the risk of overloading.

Master Clock: 48 MHz

The high master clock frequency enables fast processing of image data, leading to quick capture and transmission of images.

Body Width: 12 inch

The compact body width makes this image sensor suitable for applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Being a CMOS image sensor, it offers low power consumption and high integration, making it a good choice for portable devices.

Body Height: 1.35 mm

The low body height allows for easy integration into various devices and systems.

Package Shape or Style: SQUARE

The square package shape provides a stable mounting interface and simplifies the manufacturing process.

Minimum Supply Voltage: 1.7 V

With a low minimum supply voltage requirement, this image sensor can operate efficiently even in low power scenarios.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature range ensures reliable performance in a wide range of environmental conditions.

Horizontal Pixel: 3856

The high horizontal pixel count results in detailed and sharp images with impressive clarity.

Output Range: 0.40-1.40V

The wide output voltage range allows for flexible signal processing and compatibility with various systems.

Output Type: DIGITAL VOLTAGE

The digital output voltage simplifies signal processing and enhances the overall efficiency of the image sensor.

Minimum Operating Temperature: -30 °C

The low minimum operating temperature ensures that the image sensor can function reliably in cold environments.

Maximum Operating Current: 190 mA

With a moderate maximum operating current, this image sensor consumes relatively low power, making it energy-efficient.

Housing: PLASTIC

The plastic housing offers durability and lightweight design, making the image sensor suitable for portable and rugged applications.

Dynamic Range: 65.2 dB

The high dynamic range allows the image sensor to capture both bright and dark details accurately, resulting in high-quality images.

Vertical Pixel: 2764

The vertical pixel count contributes to the overall resolution and quality of images captured by this image sensor.

Body Length/Diameter: 12 mm

The compact body length or diameter facilitates easy integration and placement of the image sensor in various devices.

Optical Format (inch): 1/2.3

The optical format corresponds to a popular standard, ensuring compatibility with a wide range of lenses and optical systems.

Data Rate: 480 Mbps

The high data rate enables fast transmission of image data, making this image sensor suitable for real-time imaging applications.

Termination Type: SOLDER

The solder termination ensures secure and reliable connections, enhancing the overall durability of the image sensor in various applications.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface allows for simplified communication and control of the image sensor, enhancing its usability in different systems.

Frame Rate: 60 fps

The high frame rate enables smooth and fluid video capture, making this image sensor ideal for applications requiring high-speed imaging.

Array Type: FRAME

The frame array type allows for efficient capture of images with high resolution and quality, making this image sensor suitable for various imaging applications.

Mounting Feature: SURFACE MOUNT

The surface mount capability facilitates easy and secure installation of the image sensor onto circuit boards or devices, enhancing overall efficiency and reliability.

Technical Specifications

Image Sensors MT9J003T12STCV attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO HAVE ANALOG SUPPLY VOLTAGE 2.40-3.10 V, ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

12 inch

Body Height:

1.35 mm

Body Length/Diameter:

12 mm

Data Rate:

480 Mbps

Dynamic Range:

65.2 dB

Frame Rate:

60 fps

Horizontal Pixel:

3856

Housing:

PLASTIC

Master Clock:

48 MHz

Mounting Feature:

Maximum Operating Current:

190 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/2.3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

1.67X1.67

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

2764

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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