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MT9J003I12STCV2-TB-TP

Onsemi

MT9J003I12STCV2-TB-TP by Onsemi

MT9J003I12STCV2-TB-TP by Onsemi is a CMOS image sensor with 3856x2764 pixels, 1.67um pixel size, and 65.2dB dynamic range. It operates at -30 to 70 °C, has a digital output interface, and is ideal for high-speed imaging applications requiring precise color reproduction.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Vyrian

USA . 3,573 parts In-Stock

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Digiode

USA . 1,141 parts In-Stock

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AZTECH Wire

Italy . 1,078 parts In-Stock

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Kulean Microsystems

USA . 4,792 parts In-Stock

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Problanco Electronics

Mexico . 3,329 parts In-Stock

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TANS Electronics

Latvia . 2,463 parts In-Stock

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Corphita

USA . 2,064 parts In-Stock

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SupplyDigital Components

Austria . 1,372 parts In-Stock

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UHIMA Technologies

Türkiye . 711 parts In-Stock

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Corohmni

South Africa . 72 parts In-Stock

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Overview

Capture stunning images with the MT9J003I12STCV2-TB-TP image sensor by Onsemi, a leading manufacturer in the industry. This cutting-edge technology offers unparalleled quality and performance, making it ideal for a wide range of applications. From security cameras to automotive systems, this sensor delivers crisp, high-resolution images with exceptional clarity. Experience the value and benefits of this innovative product, designed to meet the diverse needs of customers looking for reliability and efficiency in their imaging solutions. Elevate your projects with the MT9J003I12STCV2-TB-TP and unlock endless possibilities in image capture.

Feature Benefit Bullets

Pixel Size (um): 1.67X1.67

Small pixel size allows for high resolution images to be captured with fine details.

Maximum Supply Voltage: 1.9 V

Provides sufficient power for the sensor to operate efficiently without risking damage.

Master Clock: 48 MHz

Fast master clock speed enables quick processing of image data for real-time applications.

Body Width: 10 inch

Compact size makes it suitable for integration into various devices without taking up much space.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology offers high image quality, low power consumption, and fast data readout.

Maximum Operating Temperature: 70 °C

Wide operating temperature range allows for reliable performance in various environments.

Horizontal Pixel: 3856

High pixel count enables the sensor to capture detailed images with high resolution.

Output Range: 0.40-1.40V

Wide output range provides flexibility in adjusting the output signal based on ambient lighting conditions.

Minimum Operating Temperature: -30 °C

Can function in cold temperatures without compromising performance.

Dynamic Range: 65.2 dB

Wide dynamic range allows for capturing images with both bright and dark areas accurately.

Vertical Pixel: 2764

The high vertical pixel count contributes to the sharpness and clarity of vertical details in images.

Spectral Response (nm): 350-750

Broad spectral response enables capturing of images across a wide range of wavelengths.

Data Rate: 480 Mbps

High data rate facilitates quick transfer of image data, ideal for fast-paced applications.

Output Interface Type: 2-WIRE INTERFACE

Efficient 2-wire interface simplifies connectivity with other devices and systems.

Frame Rate: 60 fps

High frame rate allows for smooth and fluid video recording and playback.

Sensitivity (V/lx.s): 0.31 V/lx.s

High sensitivity enables the sensor to capture clear images even in low-light conditions.

Mounting Feature: SURFACE MOUNT

Surface mount capability makes it easy to securely install the sensor on PCBs or other surfaces.

Technical Specifications

Image Sensors MT9J003I12STCV2-TB-TP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO HAVE ANALOG SUPPLY VOLTAGE 2.4-3.1 V, ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

10 inch

Body Height:

1.25 mm

Body Length/Diameter:

10 mm

Data Rate:

480 Mbps

Dynamic Range:

65.2 dB

Frame Rate:

60 fps

Horizontal Pixel:

3856

Housing:

PLASTIC/EPOXY

Master Clock:

48 MHz

Mounting Feature:

Maximum Operating Current:

190 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/2.3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

1.67X1.67

Sensitivity (V/lx.s):

.31 V/lx.s

Sensors or Transducers Type:

Spectral Response (nm):

350-750

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

2764

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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