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MT9J003D00STCVC2CBC1

Onsemi

MT9J003D00STCVC2CBC1 by Onsemi

The Onsemi MT9J003D00STCVC2CBC1 is an image sensor with 3856x2764 pixels, 1.67um pixel size, and a 48MHz master clock. It operates b/w -30 to 70 °C, outputs digital voltage from 0.40-1.40V, and has a dynamic range of 65.2dB. Ideal for high-resolution imaging applications requiring fast frame rates at 60fps.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,337 parts In-Stock

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Vyrian

USA . 1,964 parts In-Stock

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Kulean Microsystems

USA . 7,736 parts In-Stock

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SupplyDigital Components

Austria . 7,291 parts In-Stock

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TANS Electronics

Latvia . 4,189 parts In-Stock

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Corphita

USA . 1,459 parts In-Stock

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Problanco Electronics

Mexico . 1,321 parts In-Stock

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UHIMA Technologies

Türkiye . 485 parts In-Stock

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Corohmni

South Africa . 305 parts In-Stock

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Overview

Capture every moment with the MT9J003D00STCVC2CBC1 by Onsemi, a cutting-edge image sensor that offers unparalleled quality and reliability. Manufactured by industry leader Onsemi, this sensor is designed to deliver crystal-clear images with a wide dynamic range, making it perfect for applications in automotive, surveillance, and industrial settings. With its high frame rate, compact size, and easy surface mount installation, the MT9J003D00STCVC2CBC1 provides exceptional value and performance to customers looking for top-of-the-line imaging solutions. Experience the difference with Onsemi's innovative technology today.

Feature Benefit Bullets

Pixel Size (um): 1.67X1.67

Smaller pixel size allows for higher resolution images to be captured, making this sensor ideal for applications requiring detailed image quality.

Maximum Supply Voltage: 1.9 V

Higher maximum supply voltage ensures stable operation and performance of the sensor under varying conditions, improving overall reliability.

Master Clock: 48 MHz

High master clock frequency enables fast data processing and high-speed image capture, making this sensor suitable for applications requiring rapid image acquisition.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS image sensors are known for their low power consumption, high sensitivity, and excellent image quality, making this sensor a standout choice for various imaging applications.

Minimum Supply Voltage: 1.7 V

Lower minimum supply voltage allows for efficient power usage, extending battery life and making this sensor suitable for portable or battery-operated devices.

Maximum Operating Temperature: 70 °C

Wide operating temperature range ensures the sensor can function reliably in various environments, making it versatile for use in both indoor and outdoor settings.

Output Range: 0.40-1.40V

Wide output voltage range provides flexibility in signal processing and compatibility with different circuit designs, making this sensor versatile for integration into various systems.

Output Type: DIGITAL VOLTAGE

Digital output simplifies data processing and integration with digital systems, improving overall system efficiency and ease of use.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature ensures the sensor can function in cold environments without performance degradation, making it suitable for a wide range of applications.

Maximum Operating Current: 190 mA

Low operating current consumption results in energy-efficient operation, reducing power costs and heat generation for improved system reliability.

Dynamic Range: 65.2 dB

High dynamic range allows the sensor to capture both bright and dark areas in the scene with detail, resulting in high-quality images with accurate colors and contrast.

Vertical Pixel: 2764

Large number of vertical pixels enables high-resolution images to be captured, making this sensor suitable for applications requiring detailed image quality.

Optical Format (inch): 1/2.3

Popular optical format provides compatibility with a wide range of lenses and accessories, making this sensor versatile for use in various imaging setups.

Data Rate: 480 Mbps

High data rate allows for fast transfer of image data, reducing latency and enabling real-time image processing, making this sensor suitable for high-speed imaging applications.

Termination Type: SOLDER

Solder termination ensures secure and reliable electrical connections, providing durability and long-term performance for the sensor in various operating conditions.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies communication and integration with other devices, making it easy to connect the sensor to a host system for streamlined operation.

Frame Rate: 60 fps

High frame rate allows for smooth and fluid video capture, making this sensor suitable for applications requiring high-speed imaging or video recording.

Array Type: FRAME

Array type structure allows for organized pixel arrangement and efficient data capture, resulting in high-quality images with accurate details and colors.

Mounting Feature: SURFACE MOUNT

Surface mount design enables easy and secure installation of the sensor on a PCB or other surface, saving space and simplifying assembly for integration into various devices.

Technical Specifications

Image Sensors MT9J003D00STCVC2CBC1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO HAVE ANALOG SUPPLY VOLTAGE 2.40-3.10 V, ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Data Rate:

480 Mbps

Dynamic Range:

65.2 dB

Frame Rate:

60 fps

Horizontal Pixel:

3856

Master Clock:

48 MHz

Mounting Feature:

Maximum Operating Current:

190 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/2.3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Pixel Size (um):

1.67X1.67

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

2764

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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