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MT9J003I12STMV-TB-DP

Onsemi

MT9J003I12STMV-TB-DP by Onsemi

MT9J003I12STMV-TB-DP by Onsemi is an image sensor with 3856x2764 pixels, 1.67um pixel size, and a 48MHz master clock. Ideal for high-resolution imaging applications, it offers a digital voltage output range of 0.40-1.40V and operates b/w -30 to 70 °C temperatures at a max current of 190mA.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Flip Electronics

USA . 4,800 parts In-Stock

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Vyrian

USA . 2,282 parts In-Stock

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Digiode

USA . 1,070 parts In-Stock

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Perfect Parts

USA . 8,064 parts In-Stock

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Kulean Microsystems

USA . 2,568 parts In-Stock

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Problanco Electronics

Mexico . 1,726 parts In-Stock

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TANS Electronics

Latvia . 1,448 parts In-Stock

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Corphita

USA . 1,431 parts In-Stock

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SupplyDigital Components

Austria . 839 parts In-Stock

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UHIMA Technologies

Türkiye . 529 parts In-Stock

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Corohmni

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Overview

Capture every moment in crystal-clear detail with the MT9J003I12STMV-TB-DP Image Sensor by Onsemi. Trusted for its superior quality and cutting-edge technology, this sensor is a game-changer in the world of imaging. Perfect for a wide range of applications, from surveillance cameras to automotive sensing systems, this sensor delivers unmatched performance and reliability. Experience the value and benefits of this state-of-the-art product, designed to exceed your expectations and bring your vision to life. Elevate your projects with the MT9J003I12STMV-TB-DP Image Sensor and see the difference for yourself.

Feature Benefit Bullets

Pixel Size (um) 1.67X1.67

Smaller pixel size allows for higher resolution images to be captured with more detail.

Maximum Supply Voltage 1.9 V

Allows for reliable operation within the specified voltage range.

Master Clock 48 MHz

High master clock frequency enables fast data processing and image capturing.

Body Width 10 inch

Compact body size enables easy integration into various devices.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS sensor technology provides high-quality image sensing capabilities.

Body Height 1.25 mm

Low body height allows for slim device designs without compromising on performance.

Package Shape or Style SQUARE

Square package shape facilitates easy mounting and alignment in devices.

Minimum Supply Voltage 1.7 V

Allows for reliable operation even at lower voltage levels for power efficiency.

Maximum Operating Temperature 70 °C

Wide operating temperature range ensures performance in various environmental conditions.

Horizontal Pixel 3856

High horizontal pixel count allows for detailed and wide-angle image capture.

Output Range 0.40-1.40V

Wide output voltage range provides flexibility in signal processing and compatibility.

Output Type DIGITAL VOLTAGE

Digital voltage output simplifies signal processing and integration with digital systems.

Minimum Operating Temperature -30 °C

Operational at low temperatures ensures usability in cold environments.

Maximum Operating Current 190 mA

Moderate operating current requirement for power efficiency in devices.

Housing PLASTIC/EPOXY

Durable and lightweight housing material for long-term reliability and ease of handling.

Dynamic Range 65.2 dB

High dynamic range enables capturing images with varying light levels accurately.

Vertical Pixel 2764

High vertical pixel count for detailed image capture in both horizontal and vertical dimensions.

Body Length/Diameter 10 mm

Compact body size for easy integration in devices with limited space.

Spectral Response (nm) 350-750

Wide spectral response range for capturing images across various light wavelengths.

Optical Format (inch) 1/2.3

Standard optical format for compatibility with various lenses and imaging systems.

Data Rate 480 Mbps

High data rate for fast transfer of high-resolution images and video streams.

Termination Type SOLDER

Solder termination for secure and reliable electrical connections.

Output Interface Type 2-WIRE INTERFACE

Two-wire interface for easy integration and communication with external devices.

Frame Rate 60 fps

High frame rate for capturing smooth and detailed motion in videos and images.

Array Type FRAME

Frame array type for efficient image capturing and processing.

Sensitivity (V/lx.s) 0.31 V/lx.s

High sensitivity for capturing clear images in low-light conditions with optimal exposure.

Mounting Feature SURFACE MOUNT

Surface mount feature for easy and secure installation in electronic devices.

Technical Specifications

Image Sensors MT9J003I12STMV-TB-DP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO HAVE ANALOG SUPPLY VOLTAGE 2.4-3.1 V, ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

10 inch

Body Height:

1.25 mm

Body Length/Diameter:

10 mm

Data Rate:

480 Mbps

Dynamic Range:

65.2 dB

Frame Rate:

60 fps

Horizontal Pixel:

3856

Housing:

PLASTIC/EPOXY

Master Clock:

48 MHz

Mounting Feature:

Maximum Operating Current:

190 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/2.3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

1.67X1.67

Sensitivity (V/lx.s):

.31 V/lx.s

Sensors or Transducers Type:

Spectral Response (nm):

350-750

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

2764

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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