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MT9J003I12STCV2

Onsemi

MT9J003I12STCV2 by Onsemi

The Onsemi MT9J003I12STCV2 image sensor features 3856x2764 pixels, 1.67um pixel size, and a 48MHz master clock. Ideal for high-resolution imaging applications in industries such as surveillance, automotive, and machine vision due to its digital voltage output interface and compact square package design.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

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Digiode

USA . 1,591 parts In-Stock

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Kulean Microsystems

USA . 6,175 parts In-Stock

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Problanco Electronics

Mexico . 5,735 parts In-Stock

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SupplyDigital Components

Austria . 2,686 parts In-Stock

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Corphita

USA . 1,866 parts In-Stock

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TANS Electronics

Latvia . 1,374 parts In-Stock

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UHIMA Technologies

Türkiye . 593 parts In-Stock

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Corohmni

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Overview

Discover the cutting-edge MT9J003I12STCV2 Image Sensor by Onsemi, setting a new standard in quality and performance. With a superior manufacturer like Onsemi behind it, this sensor offers unmatched reliability and innovation. Ideal for a wide range of applications, this sensor delivers crystal-clear images with precision and accuracy. Unlock the full potential of your projects with the MT9J003I12STCV2, providing value, benefits, and advantages that exceed expectations. Join the revolution in imaging technology and elevate your creations to new heights.

Feature Benefit Bullets

Pixel Size (um): 1.67X1.67

Small pixel size allows for high resolution images with sharp detail.

Maximum Supply Voltage: 1.9 V

Higher supply voltage allows for improved performance and reliability.

Master Clock: 48 MHz

High master clock speed enables fast data processing for real-time image capture.

Body Width: 10 inch

Compact body width makes it easy to integrate into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology provides high image quality and low power consumption.

Package Shape or Style: SQUARE

Square package shape allows for easy and secure mounting.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage helps in reducing power consumption.

Maximum Operating Temperature: 70 °C

Wide operating temperature range ensures reliability in different environments.

Horizontal Pixel: 3856

High horizontal pixel count provides detailed and high-resolution images.

Output Range: 0.40-1.40V

Wide output range allows for flexibility in signal processing.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies signal processing and connectivity.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature enables use in cold environments.

Maximum Operating Current: 190 mA

Low operating current helps in reducing power consumption.

Housing: PLASTIC

Plastic housing provides durability while keeping the overall weight low.

Dynamic Range: 65.2 dB

High dynamic range allows for capturing images with both bright and dark details.

Vertical Pixel: 2764

High vertical pixel count provides detailed and high-resolution images.

Body Length/Diameter: 10 mm

Compact body length/diameter makes it easy to fit into tight spaces.

Optical Format (inch): 1/2.3

Standard optical format for compatibility with a wide range of lenses.

Data Rate: 480 Mbps

High data rate enables fast transfer of image data for quick processing.

Termination Type: SOLDER

Solder termination type ensures secure and reliable connections.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity with other devices.

Frame Rate: 60 fps

High frame rate enables smooth and fluid motion capture.

Array Type: FRAME

Frame array type provides a structured layout for efficient image capture.

Mounting Feature: SURFACE MOUNT

Surface mount feature allows for easy and secure installation onto PCBs.

Technical Specifications

Image Sensors MT9J003I12STCV2 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO HAVE ANALOG SUPPLY VOLTAGE 2.40-3.10 V, ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

10 inch

Body Height:

1.25 mm

Body Length/Diameter:

10 mm

Data Rate:

480 Mbps

Dynamic Range:

65.2 dB

Frame Rate:

60 fps

Horizontal Pixel:

3856

Housing:

PLASTIC

Master Clock:

48 MHz

Mounting Feature:

Maximum Operating Current:

190 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/2.3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

1.67X1.67

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

2764

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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