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MT9J003D00STCUC2CBC1

Onsemi

MT9J003D00STCUC2CBC1 by Onsemi

The Onsemi MT9J003D00STCUC2CBC1 Image Sensor features 3856x2764 pixels, 1.67um pixel size, and a 48MHz master clock. Ideal for high-resolution imaging applications in industries such as surveillance, automotive, and machine vision due to its 65.2dB dynamic range and 60fps frame rate.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,657 parts In-Stock

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Digiode

USA . 1,550 parts In-Stock

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SupplyDigital Components

Austria . 6,771 parts In-Stock

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Kulean Microsystems

USA . 3,613 parts In-Stock

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Problanco Electronics

Mexico . 3,000 parts In-Stock

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TANS Electronics

Latvia . 796 parts In-Stock

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UHIMA Technologies

Türkiye . 453 parts In-Stock

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Corohmni

South Africa . 331 parts In-Stock

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Corphita

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Overview

Unlock the power of crystal-clear imaging with the MT9J003D00STCUC2CBC1 from Onsemi. As a leader in image sensor technology, Onsemi delivers unparalleled quality and reliability. Perfect for a wide range of applications such as security cameras, drones, and medical equipment, this cutting-edge image sensor offers customers exceptional value and benefits. Experience stunning visuals and precise detail with the MT9J003D00STCUC2CBC1, setting new standards in image sensor performance. Elevate your projects with the best in the industry and discover the difference that Onsemi can make for you.

Feature Benefit Bullets

Pixel Size (um): 1.67X1.67

Small pixel size allows for high resolution images with fine details.

Maximum Supply Voltage: 1.9 V

Low maximum supply voltage helps in reducing power consumption and heat generation.

Master Clock: 48 MHz

High master clock frequency enables fast data processing and image capture.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors offer low power consumption, high sensitivity, and high speed operation.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage ensures efficient power usage and longer battery life.

Maximum Operating Temperature: 70 °C

Wide operating temperature range allows for usage in various environmental conditions.

Horizontal Pixel: 3856

High horizontal pixel count results in detailed and sharp images.

Output Range: 0.40-1.40V

Wide output range provides flexibility in adjusting the output signal according to requirements.

Output Type: DIGITAL VOLTAGE

Digital output simplifies signal processing and integration with other digital systems.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature allows for operation in cold environments without performance degradation.

Maximum Operating Current: 190 mA

Moderate operating current ensures efficient power usage and prolongs battery life.

Dynamic Range: 65.2 dB

High dynamic range allows for capturing images with a wide range of brightness levels.

Vertical Pixel: 2764

High vertical pixel count contributes to capturing detailed images with good resolution.

Optical Format (inch): 1/2.3

Common optical format ensures compatibility with standard lens and camera systems.

Data Rate: 480 Mbps

High data rate enables fast data transfer and real-time image processing.

Termination Type: SOLDER

Solder termination provides secure and reliable electrical connections.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and communication with other devices.

Frame Rate: 60 fps

High frame rate allows for capturing smooth and clear motion in videos and fast-moving scenes.

Array Type: FRAME

Frame array configuration enables simultaneous capture of multiple pixels for efficient image acquisition.

Mounting Feature: SURFACE MOUNT

Surface mount design facilitates easy and secure installation on PCBs or other surfaces.

Technical Specifications

Image Sensors MT9J003D00STCUC2CBC1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO HAVE ANALOG SUPPLY VOLTAGE 2.40-3.10 V, ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Data Rate:

480 Mbps

Dynamic Range:

65.2 dB

Frame Rate:

60 fps

Horizontal Pixel:

3856

Master Clock:

48 MHz

Mounting Feature:

Maximum Operating Current:

190 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/2.3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Pixel Size (um):

1.67X1.67

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

2764

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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