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MT9J003I12STCV2-TB-DP

Onsemi

MT9J003I12STCV2-TB-DP by Onsemi

MT9J003I12STCV2-TB-DP by Onsemi is a CMOS image sensor with 3856x2764 pixels, 1.67um pixel size, and 65.2dB dynamic range. Ideal for applications requiring high-resolution imaging at up to 60fps, such as surveillance systems or industrial cameras.

Median Price

$35.359

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 84 parts In-Stock

1+ parts

-

100+ parts

$31.430

1k+ parts

$28.120

10k+ parts

$26.460

84

-

$31.430

$28.120

$26.460

Verical

USA . 84 parts In-Stock

1+ parts

-

100+ parts

$39.288

1k+ parts

$35.150

10k+ parts

$33.075

84

-

$39.288

$35.150

$33.075

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,799 parts In-Stock

1+ parts

$33.250

100+ parts

-

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-

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1,799

$33.250

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Vyrian

USA . 5,713 parts In-Stock

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5,713

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,030 parts In-Stock

1+ parts

$31.500

100+ parts

-

1k+ parts

-

10k+ parts

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2,030

$31.500

-

-

-

Corohmni

South Africa . 252 parts In-Stock

1+ parts

$35.000

100+ parts

-

1k+ parts

-

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252

$35.000

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-

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SupplyDigital Components

Austria . 8,229 parts In-Stock

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8,229

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Kulean Microsystems

USA . 6,205 parts In-Stock

1+ parts

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6,205

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Problanco Electronics

Mexico . 5,532 parts In-Stock

1+ parts

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5,532

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TANS Electronics

Latvia . 531 parts In-Stock

1+ parts

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531

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UHIMA Technologies

Türkiye . 399 parts In-Stock

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399

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Overview

Capture the world in stunning detail with the MT9J003I12STCV2-TB-DP image sensor by Onsemi. This cutting-edge technology offers unparalleled quality and reliability, making it the ideal choice for a wide range of applications. From security cameras to medical imaging devices, this sensor delivers exceptional performance in any environment. Experience the value and benefits of superior image capture with the MT9J003I12STCV2-TB-DP - your gateway to crystal-clear visuals.

Feature Benefit Bullets

Pixel Size (um): 1.67X1.67

Smaller pixel size ensures higher resolution and better image quality.

Maximum Supply Voltage: 1.9 V

Allows for efficient power usage and reduced chances of voltage spikes damaging the sensor.

Master Clock: 48 MHz

High master clock frequency enables fast data processing and rapid image capture.

Body Width: 10 inch

Compact body width allows for easy integration into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors offer low power consumption, high sensitivity, and noise reduction capabilities.

Output Range: 0.40-1.40V

Wide output voltage range provides flexibility in signal processing and compatibility with different systems.

Dynamic Range: 65.2 dB

High dynamic range ensures accurate image capture with details in both bright and dark areas.

Optical Format (inch): 1/2.3

Common optical format for cameras, ensuring compatibility with a wide range of lenses and accessories.

Frame Rate: 60 fps

High frame rate allows for smooth and fluid video capture without motion blur.

Mounting Feature: SURFACE MOUNT

Surface mount capability simplifies the installation process and saves space in the overall design.

Technical Specifications

Image Sensors MT9J003I12STCV2-TB-DP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO HAVE ANALOG SUPPLY VOLTAGE 2.4-3.1 V, ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

10 inch

Body Height:

1.25 mm

Body Length/Diameter:

10 mm

Data Rate:

480 Mbps

Dynamic Range:

65.2 dB

Frame Rate:

60 fps

Horizontal Pixel:

3856

Housing:

PLASTIC/EPOXY

Master Clock:

48 MHz

Mounting Feature:

Maximum Operating Current:

190 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/2.3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

1.67X1.67

Sensitivity (V/lx.s):

.31 V/lx.s

Sensors or Transducers Type:

Spectral Response (nm):

350-750

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

2764

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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