Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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2DB1694-7
Diodes Incorporated
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): 1 A;
1 A
30 V
SINGLE
270
R-PDSO-G3
e3
1
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
PNP
.5 W
Not Qualified
Other Transistors
YES
MATTE TIN
GULL WING
DUAL
30
SWITCHING
SILICON
300 MHz
BC368ZL1G
Onsemi
BC368ZL1G by Onsemi is a NPN BJT transistor with 1A IC, 20V VCE, and 65MHz fT. Ideal for amplifier applications due to its high hFE of 85 and max power dissipation of 1.5W. The package is cylindrical with through-hole terminals, making it suitable for various electronic designs.
20 V
85
TO-92
O-PBCY-T3
e1
ROUND
CYLINDRICAL
NPN
1.5 W
NO
TIN SILVER COPPER
THROUGH-HOLE
BOTTOM
AMPLIFIER
65 MHz
BC639-16ZL1G
BC639-16ZL1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 80V and max. collector current of 1A. It has a min. DC current gain of 25 and operates up to 150°C, making it suitable for small signal applications requiring high power dissipation up to 0.8W in cylindrical package style.
80 V
25
TO-226
.8 W
200 MHz
MPS6602G
MPS6602G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 30, and can handle up to 1A collector current. With a max operating temp of 150 °C and fT of 100MHz, it offers reliable performance in various electronic circuits.
40 V
.625 W
100 MHz
300 ns
55 ns
MPS6651G
MPS6651G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 30, and max collector current of 1A. With a max operating temp of 150 °C and fT of 100MHz, it offers reliable performance in various electronic circuits.
25 V
75 ns
280 ns
MPS6652G
MPS6652G by Onsemi is a PNP BJT transistor with 40V VCEO, 1A IC, and 100MHz fT. Ideal for amplifier applications due to its 0.625W power dissipation and hFE of 30. Packaged in cylindrical shape with through-hole terminals for easy installation.
MPS6652RLRAG
MPS6652RLRAG by Onsemi is a PNP BJT transistor with 40V VCEO, 1A IC, and 100MHz fT. Ideal for amplifier applications due to its 0.625W power dissipation, hFE of 30, and operating temperature up to 150 °C. Packaged in cylindrical shape with through-hole terminals for easy installation.
BC373RL1G
BC373RL1G by Onsemi is a NPN Darlington transistor with max. power dissipation of 0.625W, hFE of 8000, and max. collector-emitter voltage of 80V. Ideal for amplifier applications due to its high gain and can operate up to 150 °C, making it suitable for various electronic designs requiring high performance in a small package.
EUROPEAN PART NUMBER
DARLINGTON
8000
TO-226AA
BC637G
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): 1 A;
60 V
40
Tin/Silver/Copper (Sn/Ag/Cu)
BC639RL1G
BC639RL1G by Onsemi is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 80V and a max collector current of 1A. It has a min DC current gain of 40 and can operate at temperatures up to 150°C. This transistor is commonly used in various electronic applications requiring low power dissipation and high frequency performance.
MPS6601G
MPS6601G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 30, and can handle up to 1A collector current. With a max operating temp of 150 °C and fT of 100MHz, it offers reliable performance in various electronic circuits.
MPS6726G
MPS6726G by Onsemi is a PNP BJT transistor with 1W power dissipation, 30V max. collector-emitter voltage, and 50MHz fT. Ideal for amplifier applications due to its single configuration and hFE of 50. Packaged in cylindrical shape with through-hole terminals for easy installation.
50
1 W
50 MHz
MPSW01ARLRAG
MPSW01ARLRAG by Onsemi is a NPN BJT with 3 terminals, max power dissipation of 2.5W, and max collector current of 1A. Ideal for applications requiring a single configuration transistor with a min DC current gain of 50 (hFE), operating up to 150 °C.
2.5 W
MPSW01ARLRPG
MPSW01ARLRPG by Onsemi is a NPN BJT with 3 terminals, max power dissipation of 2.5W, and max collector-emitter voltage of 40V. Ideal for applications requiring a single configuration transistor with a min DC current gain of 50 (hFE), operating up to 150 °C, and featuring a nominal transition frequency of 50MHz.
MPSW01AG
MPSW01AG by Onsemi is a NPN BJT transistor with 3 terminals, capable of handling up to 1A collector current and 2.5W power dissipation. With a min DC current gain of 50, it operates at temperatures up to 150 °C. Ideal for applications requiring high-speed switching in electronic circuits.
MPSW01G
MPSW01G by Onsemi is a NPN BJT with 3 terminals, max power dissipation of 2.5W, and hFE of 50. Ideal for applications requiring a max collector-emitter voltage of 30V, such as signal amplification in electronic circuits. Package style: cylindrical, terminal finish: Sn/Ag/Cu, and max operating temp: 150°C make it versatile for various projects.
BC368G
BC368G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 1.5W, hFE of 85, and operates up to 150 °C. With a max VCE of 20V and IC of 1A, it offers reliable performance in various electronic circuits.
BC372G
BC372G by Onsemi is a NPN Darlington transistor with 3 terminals and a max power dissipation of 0.625W. With a min DC current gain of 8000, it operates at temperatures up to 150 °C. Ideal for applications requiring high collector current and transition frequency up to 200MHz in small signal circuits.
100 V
BC373G
BC373G by Onsemi is a NPN Darlington transistor with 8000 min DC current gain, suitable for amplifier applications. It has a max collector-emitter voltage of 80V and can handle up to 1A of collector current. With a nominal transition frequency of 200MHz, it operates b/w -55 °C to 150°C effectively in various electronic circuits.
-55 Cel
BC490G
BC490G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 1.5W, hFE of 15, and can handle up to 80V collector-emitter voltage. With a max operating temp of 150°C and fT of 150MHz, it's suitable for various electronic circuits requiring high-speed switching capabilities.
15
150 MHz
BC517RL1G
BC517RL1G by Onsemi is a NPN Darlington transistor with hFE of 30,000. It operates up to 150°C with VCE max of 30V and IC max of 1A. Ideal for amplifier applications due to its high gain and current capabilities in a cylindrical package.
30000
BC517ZL1G
BC517ZL1G by Onsemi is a NPN Darlington transistor with hFE of 30,000. It operates up to 150°C with VCE of 30V and IC of 1A. Ideal for amplifier applications due to its high gain and current capabilities in a cylindrical package.
BC618G
BC618G by Onsemi is a NPN Darlington transistor with hFE of 4000, VCE of 55V, and IC of 1A. Ideal for amplifier applications due to its high gain and current capabilities. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.
55 V
4000
BC635RL1G
BC635RL1G by Onsemi is a NPN BJT with 45V VCEO, 1A IC, and 200MHz fT. Ideal for low-power applications, it comes in a cylindrical package with through-hole terminals. With a min hFE of 40 and max operating temp of 150 °C, it's suitable for various electronic designs.
45 V
BC635ZL1G
BC635ZL1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 45V, max. collector current of 1A, and min. DC current gain of 40. It is used in applications requiring small signal amplification in electronic circuits due to its high transition frequency of 200MHz and max. power dissipation of 0.625W.
BC639G
BC639G by Onsemi is a NPN BJT with max. power dissipation of 0.625W, hFE of 40, and max. collector-emitter voltage of 80V. Ideal for applications requiring a single configuration transistor in through-hole package style, such as amplifiers or signal processing circuits operating up to 150 °C.
BC639ZL1G
MPS6724G
MPS6724G by Onsemi is a NPN Darlington BJT with 1W power dissipation, 40V collector-emitter voltage, and 100MHz transition frequency. Ideal for applications requiring high DC current gain like amplifiers or drivers in electronic circuits.
MPS6724RLRAG
MPS6724RLRAG by Onsemi is a NPN Darlington BJT with 1W power dissipation, 40V max collector-emitter voltage, and 100MHz transition frequency. Ideal for applications requiring high DC current gain like amplifiers or drivers due to its 4000 min hFE. Package style is cylindrical with through-hole terminals.
MPS6725G
MPS6725G by Onsemi is a NPN Darlington BJT with 1W power dissipation, 4000 min. hFE, and 50V max. VCE. Ideal for applications requiring high current gain and low power consumption in through-hole configurations.
50 V
MPS6725RLRPG
MPS6725RLRPG by Onsemi is a NPN Darlington BJT with 1W power dissipation, 4000 min. hFE, and 50V max. VCE. Ideal for applications requiring high current gain and low power consumption in through-hole configurations.
MPS6727G
MPS6727G by Onsemi is a PNP BJT with 1W power dissipation, 40V max. collector-emitter voltage, and 50MHz transition frequency. Ideal for amplifier applications due to its single configuration and through-hole terminal form in a cylindrical package style.
MPSW13RLRAG
MPSW13RLRAG by Onsemi is a NPN Darlington BJT with 1A IC, 125MHz fT, and 10000 hFE. Ideal for applications requiring high current gain and frequency response in through-hole configurations. Suitable for amplification circuits in electronic devices due to its high power dissipation of 1W and operating temperature up to 150 °C.
10000
125 MHz
MPSW45AG
MPSW45AG by Onsemi is a NPN Darlington BJT with hFE of 4000, VCE of 50V, and IC of 1A. Ideal for amplifier applications due to its high gain and temperature resistance up to 150°C. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.
MPSW45ARLRAG
MPSW45ARLRAG by Onsemi is a NPN Darlington transistor with hFE of 4000, VCE of 50V, and IC of 1A. Ideal for amplifier applications due to its high gain and current capabilities. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.
MPSW45AZL1G
MPSW45AZL1G by Onsemi is a NPN Darlington BJT with hFE of 4000, VCE of 50V, and IC of 1A. Ideal for amplifier applications due to its high gain and current capabilities. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.
MPSW45RLREG
MPSW45RLREG by Onsemi is a NPN Darlington BJT with 1W power dissipation, hFE of 4000, and max IC of 1A. Ideal for applications requiring high current amplification in through-hole configurations at up to 150 °C operating temperature.
MPSW51G
MPSW51G by Onsemi is a PNP BJT with 1W power dissipation, 30V max collector-emitter voltage, and 50MHz transition frequency. Ideal for low-power applications requiring high DC current gain in a cylindrical package with through-hole terminals.
MPSW51AG
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;
MPSW51ARLRAG
MPSW51ARLRPG
MPSW51ARLRPG by Onsemi is a PNP BJT with 1W power dissipation, hFE of 50, and max. collector-emitter voltage of 40V. Ideal for small signal applications in electronics due to its high transition frequency of 50MHz and max. operating temp. of 150°C. Package style: cylindrical, terminals: through-hole with tin silver copper finish.
DSS4140V-7
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1 A;
75
R-PDSO-F6
6
.6 W
FLAT
DSS5140V-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1 A;
160
STL72
STMicroelectronics
STL72 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 400V, power dissipation of 1W, and operates up to 150 °C. Ideal for various electronic circuits requiring reliable performance.
400 V
5
TIN
DRDN010W-7
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Qualification: Not Qualified;
18 V
150
R-PDSO-G6
DVR2V5W-7
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): 1 A;
SINGLE WITH BUILT-IN DIODE
.2 W
DVR3V3W-7
BC488BRL1G
BC488BRL1G by Onsemi is a PNP BJT transistor with hFE of 15, VCE of 60V, and IC of 1A. Ideal for switching applications due to its high transition frequency of 150MHz. It comes in a cylindrical package with through-hole terminals for easy installation.
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