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1 A Small Signal Bipolar Junction Transistors (BJT) 170

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DCP55-13 by Diodes Incorporated

DCP55-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP55-16-13 by Diodes Incorporated

DCP55-16-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP56-13 by Diodes Incorporated

DCP56-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

80 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP56-16-13 by Diodes Incorporated

DCP56-16-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

80 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DZT591C-13 by Diodes Incorporated

DZT591C-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

15

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

BCX5610H6327XTSA1 by Infineon Technologies

BCX5610H6327XTSA1

Infineon Technologies

BCX5610H6327XTSA1 by Infineon is a NPN BJT transistor with 80V VCEO, 1A IC, and 2W Ptot. Ideal for amplifier applications, it has a hFE of 63 and fT of 100MHz. This small outline package with flat terminals operates up to 150°C, making it suitable for various electronic designs.

COLLECTOR

1 A

80 V

SINGLE

63

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

AEC-Q101

Other Transistors

YES

TIN

FLAT

SINGLE

40

AMPLIFIER

SILICON

100 MHz

2DD1664P-13 by Diodes Incorporated

2DD1664P-13

Diodes Incorporated

2DD1664P-13 by Diodes Inc. is a NPN BJT transistor with max power dissipation of 1W, hFE of 82, and fT of 280MHz. Ideal for switching applications, it has a max collector-emitter voltage of 32V and max collector current of 1A. Suitable for surface mount with single terminal position in small outline package style.

COLLECTOR

1 A

32 V

SINGLE

82

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

280 MHz

2DB1132P-13 by Diodes Incorporated

2DB1132P-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 190 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

32 V

SINGLE

82

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

190 MHz

2DB1132Q-13 by Diodes Incorporated

2DB1132Q-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 190 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

32 V

SINGLE

120

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

190 MHz

DCX52-13 by Diodes Incorporated

DCX52-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

63

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

200 MHz

DCX52-16-13 by Diodes Incorporated

DCX52-16-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

100

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

200 MHz

DCX68-13 by Diodes Incorporated

DCX68-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 330 MHz; Maximum Collector Current (IC): 1 A; Peak Reflow Temperature (C): 260;

COLLECTOR

1 A

20 V

SINGLE

60

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

330 MHz

DCX69-16-13 by Diodes Incorporated

DCX69-16-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

20 V

SINGLE

60

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

200 MHz

2DB1119S-13 by Diodes Incorporated

2DB1119S-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

25 V

SINGLE

40

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

200 MHz

ZTX450-AP by Micro Commercial Components

ZTX450-AP

Micro Commercial Components

ZTX450-AP by Micro Commercial Components is a NPN BJT with hFE of 15, VCEO of 45V, and IC of 1A. Ideal for applications requiring high-speed switching in electronic circuits due to its fT of 150MHz. Package style: cylindrical, terminals: through-hole, making it suitable for various electronic designs.

1 A

45 V

SINGLE

15

TO-92

O-PBCY-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

10

SILICON

150 MHz

DNLS160-7 by Diodes Incorporated

DNLS160-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 270 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): 1 A;

HIGH RELIABILITY

1 A

60 V

SINGLE

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

270 MHz

DNLS160V-7 by Diodes Incorporated

DNLS160V-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 270 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): 1 A;

HIGH RELIABILITY

1 A

60 V

SINGLE

100

R-PDSO-F6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SILICON

270 MHz

BC368,112 by NXP Semiconductors

BC368,112

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;

1 A

40 pF

20 V

SINGLE

85

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.83 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

170 MHz

.5 V

BC369,112 by NXP Semiconductors

BC369,112

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;

1 A

20 V

SINGLE

60

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.83 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

140 MHz

BC635,112 by NXP Semiconductors

BC635,112

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;

1 A

45 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

180 MHz

.5 V

BC635,116 by NXP Semiconductors

BC635,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;

1 A

45 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

180 MHz

.5 V

BC638,112 by NXP Semiconductors

BC638,112

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 145 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;

1 A

60 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

145 MHz

.5 V

BC638,116 by NXP Semiconductors

BC638,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 145 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;

1 A

60 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

145 MHz

.5 V

BC639,112 by NXP Semiconductors

BC639,112

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;

1 A

80 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

180 MHz

.5 V

BC639,116 by NXP Semiconductors

BC639,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;

1 A

80 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

180 MHz

.5 V

BC639,126 by NXP Semiconductors

BC639,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;

1 A

80 V

SINGLE

25

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SILICON

130 MHz

.5 V

BC640,112 by NXP Semiconductors

BC640,112

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 145 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;

1 A

80 V

SINGLE

63

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.83 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

145 MHz

.5 V

BC640,116 by NXP Semiconductors

BC640,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 145 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;

1 A

80 V

SINGLE

63

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

145 MHz

.5 V

BC640,126 by NXP Semiconductors

BC640,126

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;

1 A

80 V

SINGLE

25

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

100 MHz

.5 V

BC879,112 by NXP Semiconductors

BC879,112

NXP Semiconductors

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;

BUILT-IN BIAS RESISTOR

1 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

2000

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.8 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

200 MHz

1.8 V

PBSS4140S,126 by NXP Semiconductors

PBSS4140S,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 1 A; Package Shape: ROUND;

1 A

40 V

SINGLE

200

TO-92

O-PBCY-T3

e3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

150 MHz

PBSS5140S,126 by NXP Semiconductors

PBSS5140S,126

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 1 A; Package Body Material: PLASTIC/EPOXY;

1 A

40 V

SINGLE

160

TO-92

O-PBCY-T3

e3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

PNP

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

150 MHz

PBSS5140V,115 by NXP Semiconductors

PBSS5140V,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): 1 A;

1 A

40 V

SINGLE

160

R-PDSO-F6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

Not Qualified

Other Transistors

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON

150 MHz

DCP68-25-13 by Diodes Incorporated

DCP68-25-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 330 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

20 V

SINGLE

60

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

330 MHz

.5 V

DCX68-25-13 by Diodes Incorporated

DCX68-25-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 330 MHz; Maximum Collector Current (IC): 1 A; JESD-30 Code: R-PSSO-F3;

COLLECTOR

1 A

20 V

SINGLE

60

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

330 MHz

DCX69-25-13 by Diodes Incorporated

DCX69-25-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

20 V

SINGLE

60

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

200 MHz

FMMT491-TP by Micro Commercial Components

FMMT491-TP

Micro Commercial Components

FMMT491-TP by Micro Commercial Components is a NPN BJT transistor with 3 terminals, hFE of 80, and max. power dissipation of 0.5W. Ideal for small signal applications in electronics due to its high transition frequency of 150MHz and max. collector-emitter voltage of 60V.

1 A

60 V

SINGLE

80

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

10

SILICON

150 MHz

FMMT493-TP by Micro Commercial Components

FMMT493-TP

Micro Commercial Components

FMMT493-TP by Micro Commercial Components is a NPN BJT with 100V VCEO, 1A IC, and 150MHz fT. Ideal for small signal applications in electronics due to its compact SMALL OUTLINE package and high DC current gain of min 20 hFE. Suitable for surface mount designs requiring a single configuration transistor.

1 A

100 V

SINGLE

20

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.25 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

10

SILICON

150 MHz

BCX56-10R1 by Onsemi

BCX56-10R1

Onsemi

BCX56-10R1 by Onsemi is a NPN BJT transistor with 80V VCEO, 1A IC, and 130MHz fT. It is used in amplifier applications due to its 1.56W power dissipation, small outline package style, and high DC current gain of 25 hFE. The transistor's flat terminal form and single terminal position make it suitable for surface mount configurations.

1 A

80 V

SINGLE

25

R-PSSO-F3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.56 W

Not Qualified

Other Transistors

YES

TIN LEAD

FLAT

SINGLE

AMPLIFIER

SILICON

130 MHz

STX13003 by STMicroelectronics

STX13003

STMicroelectronics

STX13003 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V, ideal for switching applications. It has a max. power dissipation of 1.5W and max. collector current of 1A, suitable for circuits requiring high voltage and current handling capabilities in a cylindrical package style.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

4700 ns

BC488BRL1 by Onsemi

BC488BRL1

Onsemi

BC488BRL1 by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 60V and max. collector current of 1A. It has a min DC current gain of 15, making it suitable for switching applications due to its high transition frequency of 150MHz. The transistor comes in a cylindrical package with through-hole terminals, ideal for various electronic circuits requiring low-power amplification or signal processing.

EUROPEAN PART NUMBER

1 A

60 V

SINGLE

15

TO-92

O-PBCY-T3

e0

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

235

PNP

Not Qualified

NO

TIN LEAD

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

150 MHz

BC639-16ZL1 by Onsemi

BC639-16ZL1

Onsemi

BC639-16ZL1 by Onsemi is a NPN BJT with max. power dissipation of 0.8W, hFE of 100, and max. collector-emitter voltage of 80V. Ideal for applications requiring a single configuration transistor in through-hole package style, suitable for temperatures up to 150 °C and operating at a nominal transition frequency of 200MHz.

EUROPEAN PART NUMBER

1 A

80 V

SINGLE

100

TO-92

O-PBCY-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

235

NPN

.8 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

BOTTOM

SILICON

200 MHz

KSD1616GTA by Fairchild Semiconductor

KSD1616GTA

Fairchild Semiconductor

KSD1616GTA by Fairchild Semiconductor is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 0.75W and can handle a max collector-emitter voltage of 50V. With a min DC current gain of 200 and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.

1 A

50 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.75 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

160 MHz

KSD1616LBU by Fairchild Semiconductor

KSD1616LBU

Fairchild Semiconductor

KSD1616LBU by Fairchild Semiconductor is a NPN BJT transistor with 1A max collector current, 300 min DC current gain, and 160MHz transition frequency. It is commonly used for switching applications due to its 0.75W power dissipation, 50V max collector-emitter voltage, and -55 to +150°C operating temperature range.

1 A

50 V

SINGLE

300

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.75 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

160 MHz

KSD1616YTA by Fairchild Semiconductor

KSD1616YTA

Fairchild Semiconductor

Fairchild Semiconductor's KSD1616YTA is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 0.75W, hFE of 135, and fT of 160MHz. With a max collector-emitter voltage of 50V and operating temp up to 150°C, it suits various electronic designs requiring high-speed switching capabilities in compact cylindrical packages.

1 A

50 V

SINGLE

135

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.75 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

160 MHz

STX83003 by STMicroelectronics

STX83003

STMicroelectronics

STX83003 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1.5 W, operates up to 150 °C, and supports collector-emitter voltages up to 400 V. Its cylindrical plastic package ensures reliable performance in various circuits.

1 A

400 V

SINGLE

4

TO-92

O-PBCY-W3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

WIRE

BOTTOM

SWITCHING

SILICON

MMBT123S-7-F by Diodes Incorporated

MMBT123S-7-F

Diodes Incorporated

Diodes Incorporated MMBT123S-7-F is a NPN BJT transistor with 150 min hFE, 18V VCEO, and 1A IC. Ideal for switching applications, it has a max power dissipation of 0.3W in a small outline package suitable for surface mount technology.

1 A

18 V

SINGLE

150

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

QSL12TR by ROHM

QSL12TR

ROHM

ROHM QSL12TR is a NPN BJT with 5 terminals, 0.5W power dissipation, and 270 min hFE. Ideal for switching applications, it has a max operating temp of 125°C and can handle up to 1A collector current. The transistor's package is surface mountable with Gull Wing terminals in a small outline shape.

1 A

30 V

SINGLE WITH BUILT-IN DIODE

270

R-PDSO-G5

e1

1

1

5

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

SWITCHING

SILICON

320 MHz