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1 A Small Signal Bipolar Junction Transistors (BJT) 170

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
FMMT625QTA by Diodes Incorporated

FMMT625QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 135 MHz; Maximum Collector Current (IC): 1 A; Peak Reflow Temperature (C): 260;

HIGH RELIABILITY

1 A

150 V

SINGLE

30

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

135 MHz

FMMT491AQTC by Diodes Incorporated

FMMT491AQTC

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 1 A; Peak Reflow Temperature (C): 260;

HIGH RELIABILITY

1 A

40 V

SINGLE

35

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

150 MHz

FZT489QTA by Diodes Incorporated

FZT489QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 1 A; Terminal Finish: MATTE TIN;

HIGH RELIABILITY

COLLECTOR

1 A

30 V

SINGLE

20

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

150 MHz

BCX6825QTA by Diodes Incorporated

BCX6825QTA

Diodes Incorporated

BCX6825QTA by Diodes Inc. is a NPN BJT transistor with hFE of 60, VCE of 20V, and IC of 1A. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and fT of 100MHz. It comes in a small outline package with matte tin finish for surface mount assembly.

HIGH RELIABILITY

COLLECTOR

1 A

20 V

SINGLE

60

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

100 MHz

FMMT491QTC by Diodes Incorporated

FMMT491QTC

Diodes Incorporated

FMMT491QTC by Diodes Inc. is a NPN BJT transistor with 3 terminals, hFE of 30, and max power dissipation of 0.5W. Ideal for small outline applications requiring a collector-emitter voltage of 60V, operating at up to 150°C. AEC-Q101 certified for automotive use with a transition frequency of 150MHz.

HIGH RELIABILITY

1 A

60 V

SINGLE

30

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

150 MHz

BSP50E6327HTSA1 by Infineon Technologies

BSP50E6327HTSA1

Infineon Technologies

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; No. of Elements: 1;

COLLECTOR

1 A

45 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

2000

R-PDSO-G4

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

BSP60E6327HTSA1 by Infineon Technologies

BSP60E6327HTSA1

Infineon Technologies

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; Package Shape: RECTANGULAR;

COLLECTOR

1 A

45 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

2000

R-PDSO-G4

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

BSP62E6327HTSA1 by Infineon Technologies

BSP62E6327HTSA1

Infineon Technologies

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; Minimum DC Current Gain (hFE): 2000;

COLLECTOR

1 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

2000

R-PDSO-G4

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

BCX55E6327HTSA1 by Infineon Technologies

BCX55E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Qualification: Not Qualified;

COLLECTOR

1 A

60 V

SINGLE

40

R-PSSO-F3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

FLAT

SINGLE

SWITCHING

SILICON

100 MHz

BCP51E6327HTSA1 by Infineon Technologies

BCP51E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

45 V

SINGLE

40

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

2 W

Not Qualified

Other Transistors

YES

GULL WING

DUAL

SWITCHING

SILICON

125 MHz

BCP54E6327HTSA1 by Infineon Technologies

BCP54E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

1 A

45 V

SINGLE

40

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

BCX52E6327HTSA1 by Infineon Technologies

BCX52E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): 1 A; Transistor Element Material: SILICON;

COLLECTOR

1 A

60 V

SINGLE

40

R-PSSO-F3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

FLAT

SINGLE

SWITCHING

SILICON

125 MHz

BCX53E6327HTSA1 by Infineon Technologies

BCX53E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): 1 A; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

1 A

80 V

SINGLE

40

R-PSSO-F3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

FLAT

SINGLE

SWITCHING

SILICON

125 MHz

BCX56E6327HTSA1 by Infineon Technologies

BCX56E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Moisture Sensitivity Level (MSL): 1;

COLLECTOR

1 A

80 V

SINGLE

40

R-PSSO-F3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

FLAT

SINGLE

SWITCHING

SILICON

100 MHz

BCX5316E6327HTSA1 by Infineon Technologies

BCX5316E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): 1 A; Transistor Element Material: SILICON;

COLLECTOR

1 A

80 V

SINGLE

100

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

Matte Tin (Sn)

FLAT

SINGLE

40

AMPLIFIER

SILICON

125 MHz

CPH5518-TL-E by Onsemi

CPH5518-TL-E

Onsemi

CPH5518-TL-E by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for surface mount applications. It boasts a max power dissipation of 1.2W, min hFE of 200, and max IC of 1A. With an operating temp up to 150°C, it's suitable for various electronic circuits requiring high current amplification.

1 A

200

e6

1

150 Cel

260

NPN AND PNP

1.2 W

BIP General Purpose Small Signals

YES

TIN BISMUTH

30

BCP5216E6327HTSA1 by Infineon Technologies

BCP5216E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

100

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

2 W

AEC-Q101

Other Transistors

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

125 MHz

BCP5310E6327HTSA1 by Infineon Technologies

BCP5310E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

80 V

SINGLE

63

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

2 W

AEC-Q101

Other Transistors

YES

GULL WING

DUAL

AMPLIFIER

SILICON

125 MHz

BCX5616E6327HTSA1 by Infineon Technologies

BCX5616E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Package Shape: RECTANGULAR;

COLLECTOR

1 A

80 V

SINGLE

100

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

MATTE TIN

FLAT

SINGLE

AMPLIFIER

SILICON

100 MHz

BCX6810E6327HTSA1 by Infineon Technologies

BCX6810E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

20 V

SINGLE

85

R-PSSO-F3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

3 W

Other Transistors

YES

FLAT

SINGLE

AMPLIFIER

SILICON

100 MHz

BCX6816E6327HTSA1 by Infineon Technologies

BCX6816E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

20 V

SINGLE

100

R-PSSO-F3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

3 W

Other Transistors

YES

FLAT

SINGLE

AMPLIFIER

SILICON

100 MHz

BCX6825E6327HTSA1 by Infineon Technologies

BCX6825E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

20 V

SINGLE

160

R-PSSO-F3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

3 W

Other Transistors

YES

FLAT

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

100 MHz

BSR43QTA by Diodes Incorporated

BSR43QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Package Body Material: PLASTIC/EPOXY;

HIGH RELIABILITY

COLLECTOR

1 A

80 V

SINGLE

50

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

100 MHz

1000 ns

250 ns

NTE159 by Nte Electronics

NTE159

Nte Electronics

NTE159 by Nte Electronics is a PNP BJT transistor with max. power dissipation of 0.6W, hFE of 30, and VCE of 80V. Ideal for switching applications due to its fast turn-on/off times (ton: 100ns, toff: 400ns) and high collector current (IC: 1A).

LOW NOISE

1 A

80 V

SINGLE

30

TO-92

O-PBCY-W3

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

PNP

.6 W

Not Qualified

Other Transistors

NO

WIRE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

400 ns

100 ns

ZTX453STOB by Zetex Plc

ZTX453STOB

Zetex Plc

ZTX453STOB by Zetex Plc is a NPN BJT transistor with VCEsat of 0.7V, hFE of 10, and IC of 1A. Ideal for switching applications, it has a max operating temp of 200°C and fT of 150MHz. Package style: IN-LINE, terminal finish: MATTE TIN, and package shape: RECTANGULAR.

1 A

15 pF

100 V

SINGLE

10

R-PSIP-W3

e3

1

1

3

200 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

2 W

Not Qualified

NO

MATTE TIN

WIRE

SINGLE

SWITCHING

SILICON

150 MHz

.7 V

ZTX451STOB by Zetex Plc

ZTX451STOB

Zetex Plc

ZTX451STOB by Zetex Plc is a NPN BJT transistor for switching applications. With VCEsat of 0.35V, hFE of 10, and IC of 1A, it operates at max temp of 200°C. Its package style is IN-LINE with 3 terminals and can handle up to 2W power dissipation.

1 A

15 pF

60 V

SINGLE

10

R-PSIP-W3

e3

1

1

3

200 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

2 W

Not Qualified

CECC

NO

MATTE TIN

WIRE

SINGLE

SWITCHING

SILICON

150 MHz

.35 V

2SB1181TL/Q by ROHM

2SB1181TL/Q

ROHM

ROHM's 2SB1181TL/Q is a PNP BJT transistor with VCEsat of 0.4V, hFE of 120, and IC of 1A. Ideal for switching applications, it has a max operating temp of 150°C and can handle power dissipation up to 10W in a small outline package.

COLLECTOR

1 A

80 V

SINGLE

120

R-PSSO-G2

e2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

10 W

10 W

Not Qualified

Other Transistors

YES

TIN COPPER

GULL WING

SINGLE

10

SWITCHING

SILICON

100 MHz

.4 V

2SC5053T100Q by ROHM

2SC5053T100Q

ROHM

ROHM 2SC5053T100Q is a NPN BJT transistor for switching applications. Features include VCEsat of 0.4V, hFE of 120, and IC of 1A. Suitable for surface mount designs with a max operating temperature of 150°C.

COLLECTOR

1 A

50 V

SINGLE

120

R-PSSO-F3

e2

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

2 W

Not Qualified

Other Transistors

YES

Tin/Copper (Sn/Cu)

FLAT

SINGLE

10

SWITCHING

SILICON

150 MHz

.4 V

2SD1664T100Q by ROHM

2SD1664T100Q

ROHM

ROHM 2SD1664T100Q is a NPN BJT transistor with VCEsat of 0.4V, hFE of 120, and IC of 1A. Ideal for switching applications in small outline packages, it operates up to 150°C with a max voltage of 32V.

COLLECTOR

1 A

32 V

SINGLE

120

R-PSSO-F3

e2

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

2 W

Not Qualified

Other Transistors

YES

Tin/Copper (Sn/Cu)

FLAT

SINGLE

10

SWITCHING

SILICON

150 MHz

.4 V

BCX6825H6327XTSA1 by Infineon Technologies

BCX6825H6327XTSA1

Infineon Technologies

BCX6825H6327XTSA1 by Infineon is a NPN BJT transistor with 3W power dissipation, hFE of 160, and 20V collector-emitter voltage. It's used as an amplifier in applications requiring a small outline package style for surface mount assembly.

COLLECTOR

1 A

20 V

SINGLE

160

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

3 W

AEC-Q101

Other Transistors

YES

Tin (Sn)

FLAT

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

100 MHz

STBV42-AP by STMicroelectronics

STBV42-AP

STMicroelectronics

STBV42-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient circuit designs in various electronic devices.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STBV42G-AP by STMicroelectronics

STBV42G-AP

STMicroelectronics

STBV42G-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 400V, power dissipation of 1W, and operates up to 150 °C. Ideal for efficient circuit designs in various electronic devices.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STBV42G by STMicroelectronics

STBV42G

STMicroelectronics

STBV42G by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for various electronic circuits requiring reliable performance.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STX13003G by STMicroelectronics

STX13003G

STMicroelectronics

STX13003G by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1.5W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient circuit designs in various electronics.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

4700 ns

STBV42 by STMicroelectronics

STBV42

STMicroelectronics

STBV42 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V, ideal for switching applications. It has a max. power dissipation of 1W and max. collector current of 1A, suitable for low-power circuits in various electronic devices. The package style is cylindrical with matte tin terminal finish, making it easy to integrate into through-hole PCB designs.

1 A

400 V

SINGLE

5

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

PMD4003K,115 by NXP Semiconductors

PMD4003K,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1 A; Terminal Form: GULL WING; JESD-609 Code: e3;

1 A

40 V

SINGLE

75

TO-236

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

PMD5003K,115 by NXP Semiconductors

PMD5003K,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1 A; Minimum DC Current Gain (hFE): 50; Transistor Element Material: SILICON;

1 A

40 V

SINGLE

50

TO-236

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

PMEM4010ND,115 by NXP Semiconductors

PMEM4010ND,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1 A;

1 A

40 V

SINGLE WITH BUILT-IN DIODE

200

R-PDSO-G6

e3

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

PMEM4010PD,115 by NXP Semiconductors

PMEM4010PD,115

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1 A;

1 A

40 V

SINGLE WITH BUILT-IN DIODE

160

R-PDSO-G6

e3

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

DZT491-13 by Diodes Incorporated

DZT491-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

30

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

DCP69A-13 by Diodes Incorporated

DCP69A-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): 1 A; Peak Reflow Temperature (C): 260;

COLLECTOR

1 A

20 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

250 MHz

DCP69A-16-13 by Diodes Incorporated

DCP69A-16-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): 1 A; No. of Elements: 1;

COLLECTOR

1 A

20 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

250 MHz

DCP52-13 by Diodes Incorporated

DCP52-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP52-16-13 by Diodes Incorporated

DCP52-16-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

60 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP51-13 by Diodes Incorporated

DCP51-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

45 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP51-16-13 by Diodes Incorporated

DCP51-16-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

45 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP54-13 by Diodes Incorporated

DCP54-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

45 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DCP54-16-13 by Diodes Incorporated

DCP54-16-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

45 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz