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1 A Small Signal Bipolar Junction Transistors (BJT) 170

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MPSW45G by Onsemi

MPSW45G

Onsemi

MPSW45G by Onsemi is a NPN Darlington BJT with 1W power dissipation, hFE of 4000, and IC of 1A. Ideal for applications requiring high current amplification in through-hole configurations at up to 150 °C operating temperature.

1 A

DARLINGTON

4000

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

100 MHz

STBV42D by STMicroelectronics

STBV42D

STMicroelectronics

STBV42D by STMicroelectronics is an NPN small signal BJT designed for switching applications. It features a max collector-emitter voltage of 400V, a min DC current gain (hFE) of 5, and operates up to 150 °C. Its cylindrical package ensures efficient thermal management.

1 A

400 V

SINGLE WITH BUILT-IN DIODE

5

TO-92

O-PBCY-W3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

Not Qualified

NO

MATTE TIN

WIRE

BOTTOM

SWITCHING

SILICON

ZXTD2090E6TA by Diodes Incorporated

ZXTD2090E6TA

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 215 MHz; Maximum Power Dissipation (Abs): 1.7 W; Maximum Collector Current (IC): 1 A;

1 A

50 V

SEPARATE, 2 ELEMENTS

20

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.7 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

215 MHz

425 ns

150 ns

DSS9110Y-7 by Diodes Incorporated

DSS9110Y-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): 1 A;

1 A

100 V

SINGLE

125

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.625 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

BSP61H6327XTSA1 by Infineon Technologies

BSP61H6327XTSA1

Infineon Technologies

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; No. of Elements: 1;

COLLECTOR

1 A

60 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

2000

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

TIN

GULL WING

DUAL

SILICON

200 MHz

BCP5310H6327XTSA1 by Infineon Technologies

BCP5310H6327XTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

80 V

SINGLE

63

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

2 W

Other Transistors

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

125 MHz

BCP5316H6327XTSA1 by Infineon Technologies

BCP5316H6327XTSA1

Infineon Technologies

BCP5316H6327XTSA1 by Infineon is a PNP BJT with 4 terminals, 2W power dissipation, and 80V collector-emitter voltage. Ideal for amplifier applications, it has a min hFE of 100 and operates up to 150°C. This surface-mount transistor in a small outline package offers high performance with a transition frequency of 125MHz.

COLLECTOR

1 A

80 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

2 W

Other Transistors

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

125 MHz

BCX5316E6433HTMA1 by Infineon Technologies

BCX5316E6433HTMA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): 1 A; JESD-30 Code: R-PSSO-F3;

COLLECTOR

1 A

80 V

SINGLE

100

R-PSSO-F3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

FLAT

SINGLE

SWITCHING

SILICON

125 MHz

BCX5616E6433HTMA1 by Infineon Technologies

BCX5616E6433HTMA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Transistor Element Material: SILICON;

COLLECTOR

1 A

80 V

SINGLE

100

R-PSSO-F3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

FLAT

SINGLE

SWITCHING

SILICON

100 MHz

BSP50H6327XTSA1 by Infineon Technologies

BSP50H6327XTSA1

Infineon Technologies

Infineon's BSP50H6327XTSA1 is a NPN BJT with Darlington configuration, ideal for switching applications. Features include hFE of 2000, VCE of 45V, and IC of 1A. With a fT of 200MHz, this transistor offers fast turn-on/off times making it suitable for high-speed operations in compact designs.

COLLECTOR

1 A

45 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

2000

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

1500 ns

400 ns

BSP51H6327XTSA1 by Infineon Technologies

BSP51H6327XTSA1

Infineon Technologies

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; JESD-609 Code: e3;

COLLECTOR

1 A

60 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

2000

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

1500 ns

400 ns

BSP52H6327XTSA1 by Infineon Technologies

BSP52H6327XTSA1

Infineon Technologies

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; Package Style (Meter): SMALL OUTLINE;

COLLECTOR

1 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

2000

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

1500 ns

400 ns

BSP62H6327XTSA1 by Infineon Technologies

BSP62H6327XTSA1

Infineon Technologies

BSP62H6327XTSA1 by Infineon is a PNP BJT with Darlington configuration, built-in diode, and resistor. It has a hFE of 2000, Vce of 80V, and fT of 200MHz. Ideal for switching applications, this transistor offers fast turn-on/off times and can handle up to 1A collector current in a surface-mount package.

COLLECTOR

1 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

2000

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

1500 ns

400 ns

ZXTN4004ZQTA by Diodes Incorporated

ZXTN4004ZQTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1 A; Terminal Form: FLAT; Package Shape: RECTANGULAR;

HIGH RELIABILITY

COLLECTOR

1 A

150 V

SINGLE

100

R-PSSO-F3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

BCX6910H6327XTSA1 by Infineon Technologies

BCX6910H6327XTSA1

Infineon Technologies

BCX6910H6327XTSA1 by Infineon is a PNP BJT transistor with 20V VCE, 1A IC, and 100MHz fT. Ideal for amplifier applications due to its high hFE of 85. It comes in a small outline package with flat terminals suitable for surface mount assembly.

COLLECTOR

1 A

20 V

SINGLE

85

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

TIN

FLAT

SINGLE

AMPLIFIER

SILICON

100 MHz

BCP56/ZLF by Nexperia

BCP56/ZLF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Collector Current (IC): 1 A; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

1 A

80 V

SINGLE

40

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

180 MHz

BCP56/ZLX by Nexperia

BCP56/ZLX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Collector Current (IC): 1 A; Maximum Collector-Emitter Voltage: 80 V;

COLLECTOR

1 A

80 V

SINGLE

40

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

180 MHz

PBSS5140T/ZLR by Nexperia

PBSS5140T/ZLR

Nexperia

PBSS5140T/ZLR by Nexperia is a PNP BJT transistor for switching applications. It has hFE of 160, VCE of 40V, and IC of 1A. With a fT of 150MHz, it comes in a small outline package ideal for surface mount configurations.

1 A

40 V

SINGLE

160

TO-236AB

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

150 MHz

PBSS4160DSZ by Nexperia

PBSS4160DSZ

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 220 MHz; Maximum Collector Current (IC): 1 A; Reference Standard: AEC-Q101;

1 A

60 V

SEPARATE, 2 ELEMENTS

250

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

220 MHz

BC55-10PASX by Nexperia

BC55-10PASX

Nexperia

BC55-10PASX by Nexperia is a NPN BJT transistor for switching applications. With hFE of 63, Vce of 60V, and Ic of 1A, it offers high performance in a small outline package. Ideal for surface mount designs requiring fast switching capabilities at up to 180MHz.

COLLECTOR

1 A

60 V

SINGLE

63

S-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

180 MHz

BCP55-16F by Nexperia

BCP55-16F

Nexperia

Nexperia's BCP55-16F is a NPN BJT transistor with 100 min hFE, 60V VCE, and 1A IC. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and 180MHz fT. Features GULL WING terminals in a small outline package.

COLLECTOR

1 A

60 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

180 MHz

BCX51-10F by Nexperia

BCX51-10F

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 145 MHz; Maximum Collector Current (IC): 1 A; Transistor Application: SWITCHING;

COLLECTOR

1 A

45 V

SINGLE

63

TO-243AA

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

FLAT

SINGLE

30

SWITCHING

SILICON

145 MHz

BCP5316E6433HTMA1 by Infineon Technologies

BCP5316E6433HTMA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): 1 A; JESD-30 Code: R-PDSO-G4;

COLLECTOR

1 A

80 V

SINGLE

100

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

125 MHz

BCX5516E6433HTMA1 by Infineon Technologies

BCX5516E6433HTMA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Reference Standard: AEC-Q101;

COLLECTOR

1 A

60 V

SINGLE

100

R-PSSO-F3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

FLAT

SINGLE

AMPLIFIER

SILICON

100 MHz

BCX5316H6433XTMA1 by Infineon Technologies

BCX5316H6433XTMA1

Infineon Technologies

BCX5316H6433XTMA1 by Infineon is a PNP BJT transistor with hFE of 100, VCE of 80V, and IC of 1A. Ideal for amplifier applications, it operates up to 150°C with a transition frequency of 125MHz. Suitable for surface mount designs in automotive electronics per AEC-Q101 standard.

COLLECTOR

1 A

80 V

SINGLE

100

R-PSSO-F3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

AEC-Q101

YES

FLAT

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

125 MHz

FCX493QTA by Diodes Incorporated

FCX493QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

10 pF

100 V

SINGLE

20

R-PSSO-F3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

150 MHz

.6 V