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BCX5316H6433XTMA1

Infineon Technologies

BCX5316H6433XTMA1 by Infineon Technologies

BCX5316H6433XTMA1 by Infineon is a PNP BJT transistor with hFE of 100, VCE of 80V, and IC of 1A. Ideal for amplifier applications, it operates up to 150°C with a transition frequency of 125MHz. Suitable for surface mount designs in automotive electronics per AEC-Q101 standard.

Median Price

$0.148

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 8,000 parts In-Stock

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-

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$0.165

8,000

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$0.165

Rochester

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

$0.130

1k+ parts

$0.107

10k+ parts

$0.096

8,000

-

$0.130

$0.107

$0.096

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 774 parts In-Stock

1+ parts

$0.101

100+ parts

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774

$0.101

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Chip Stock

USA . 923,760 parts In-Stock

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923,760

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Vyrian

USA . 7,796 parts In-Stock

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7,796

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Nova Conductors

Japan . 500 parts In-Stock

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500

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VNN

France . 70 parts In-Stock

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70

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 11,945 parts In-Stock

1+ parts

$0.090

100+ parts

-

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11,945

$0.090

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Corphita

USA . 303 parts In-Stock

1+ parts

$0.095

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303

$0.095

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Corohmni

South Africa . 347 parts In-Stock

1+ parts

$0.571

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347

$0.571

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Modulus Dynamics

Lithuania . 22,564 parts In-Stock

1+ parts

$0.656

100+ parts

$0.630

1k+ parts

$0.604

10k+ parts

-

22,564

$0.656

$0.630

$0.604

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$2.345

100+ parts

$2.134

1k+ parts

$1.923

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-

2,500

$2.345

$2.134

$1.923

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AZTECH Wire

Italy . 127 parts In-Stock

1+ parts

$16.150

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127

$16.150

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Overview

Unlock the potential of your electronic designs with the BCX5316H6433XTMA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon brings unparalleled quality and reliability to their Small Signal Bipolar Junction Transistors. Whether you're looking to amplify signals or enhance circuit performance, this PNP transistor offers exceptional value and benefits. With a high DC current gain, maximum operating temperature of 150°C, and AEC-Q101 compliance, this transistor is ideal for a wide range of applications. Trust Infineon to deliver top-notch performance and efficiency for all your amplifier needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it reliable for long-term use.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits and this polarity suits the transistor application as an amplifier.

Configuration: SINGLE

Single configuration simplifies the design and integration of the transistor into electronic circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in signal amplification.

Surface Mount: YES

Surface mount capability allows for easy and efficient assembly onto circuit boards.

Minimum DC Current Gain (hFE): 100

High minimum DC current gain ensures stable and consistent amplification of signals.

Maximum Operating Temperature: 150 °C

Allows the transistor to operate reliably even under high temperatures, making it suitable for a range of applications.

Maximum Collector-Emitter Voltage: 80 V

Capable of handling high voltages, making it versatile for different circuit designs and applications.

Maximum Collector Current (IC): 1 A

Capable of handling relatively high collector currents, providing flexibility in circuit design.

Nominal Transition Frequency (fT): 125 MHz

High transition frequency allows for amplification of high-frequency signals, suitable for audio and RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCX5316H6433XTMA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCX5316H6433XTMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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