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BC55-10PASX

Nexperia

BC55-10PASX by Nexperia

BC55-10PASX by Nexperia is a NPN BJT transistor for switching applications. With hFE of 63, Vce of 60V, and Ic of 1A, it offers high performance in a small outline package. Ideal for surface mount designs requiring fast switching capabilities at up to 180MHz.

Median Price

$0.114

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Verical

USA . 3,000 parts In-Stock

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$0.148

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$0.148

Rochester

USA . 3,000 parts In-Stock

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Chip1Stop

Japan . 975 parts In-Stock

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$0.081

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$0.071

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975

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$0.081

$0.071

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Distributors (In-Stock)

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Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$0.098

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$0.098

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Chip Stock

USA . 108,000 parts In-Stock

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108,000

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Vyrian

USA . 18,483 parts In-Stock

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VNN

France . 1,000 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 970 parts In-Stock

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$0.069

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970

$0.069

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Semicontronic

India . 925 parts In-Stock

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$0.069

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$0.067

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$0.067

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925

$0.069

$0.067

$0.067

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Continental Prestige Electronics

USA . 6,819 parts In-Stock

1+ parts

$0.098

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$0.097

6,819

$0.098

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$0.097

Argo Parts USA

USA . 4,432 parts In-Stock

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$0.098

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$0.096

4,432

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$0.096

AZTECH Wire

Italy . 8,663 parts In-Stock

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$5.537

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Kepictronics

USA . 154,835 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Supply Digital

USA . 2,274 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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$0.097

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$0.094

10k+ parts

$0.092

100

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$0.097

$0.094

$0.092

Overview

Unleash the power of innovation with Nexperia's BC55-10PASX Small Signal Bipolar Junction Transistor. Designed for switching applications, this NPN transistor offers unparalleled quality and reliability. With a maximum collector-emitter voltage of 60V and a DC current gain of 63, this transistor is perfect for a wide range of electronic projects. Trust Nexperia's expertise in semiconductor manufacturing to deliver a product that exceeds expectations. Upgrade your designs today with the BC55-10PASX and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package is lightweight and durable, making it easy to handle and ensuring the transistor is well protected.

Polarity or Channel Type: NPN

NPN transistors are commonly used in applications requiring amplification or switching, making this transistor versatile and suitable for a wide range of tasks.

Configuration: SINGLE

Single configuration transistors are simple to use and integrate into circuits, making them ideal for straightforward switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and reliable performance in control circuits.

Surface Mount: YES

Being surface mountable makes this transistor easy to solder onto PCBs, saving space and simplifying assembly processes.

Package Shape: SQUARE

The square package shape allows for efficient use of space on a PCB, especially when multiple transistors are used in close proximity.

Terminal Form: NO LEAD

The absence of leads simplifies the soldering process and reduces the risk of damage to the transistor during assembly.

No. of Terminals: 3

Having three terminals enables easy connectivity to the external circuit, ensuring proper operation and functionality.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, allowing for higher component density and more efficient circuit design.

Minimum DC Current Gain (hFE): 63

With a minimum DC current gain of 63, this transistor provides reliable and consistent amplification of input signals, ensuring accurate switching behavior.

Maximum Collector-Emitter Voltage: 60 V

The high collector-emitter voltage rating of 60V allows this transistor to handle higher voltage levels, increasing the range of applications it can be used in.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this transistor a durable and long-lasting choice for various electronic applications.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1A, this transistor can handle moderate power levels, making it suitable for a wide range of switching applications.

Terminal Finish: TIN

The tin terminal finish provides good solderability and ensures a reliable electrical connection, contributing to the overall performance and longevity of the transistor.

Terminal Position: DUAL

Having dual terminal positions allows for flexibility in circuit design and makes it easier to route connections on the PCB.

Case Connection: COLLECTOR

The case connection at the collector terminal simplifies the design and layout of the circuit, making it easier to connect the transistor in control applications.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, this transistor is easy to solder and integrate into a PCB assembly process.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures proper soldering of the transistor and reliable performance under thermal stress conditions.

Reference Standard: AEC-Q101; IEC-60134

Compliance with AEC-Q101 and IEC-60134 standards ensures the quality and reliability of the transistor, making it suitable for automotive and industrial applications.

Nominal Transition Frequency (fT): 180 MHz

With a nominal transition frequency of 180 MHz, this transistor can switch signals at high speeds, making it ideal for applications requiring fast response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC55-10PASX attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

63

JESD-30 Code:

S-PDSO-N3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC55-10PASX Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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