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BC639G

Onsemi

BC639G by Onsemi

BC639G by Onsemi is a NPN BJT with max. power dissipation of 0.625W, hFE of 40, and max. collector-emitter voltage of 80V. Ideal for applications requiring a single configuration transistor in through-hole package style, such as amplifiers or signal processing circuits operating up to 150 °C.

Median Price

$0.090

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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EXC GmbH

Germany . 200 parts In-Stock

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$0.065

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200

$0.065

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Schukat

Germany . 13,100 parts In-Stock

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-

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$0.114

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$0.078

10k+ parts

$0.056

13,100

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$0.114

$0.078

$0.056

Vyrian

USA . 10,385 parts In-Stock

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10,385

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Chip Stock

USA . 9,080 parts In-Stock

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Digiode

USA . 698 parts In-Stock

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698

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Distributors (Availability)

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Corohmni

South Africa . 106 parts In-Stock

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$0.065

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106

$0.065

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AZTECH Wire

Italy . 643 parts In-Stock

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$11.120

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643

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Perfect Parts

USA . 27,367 parts In-Stock

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SupplyDigital Components

Austria . 7,799 parts In-Stock

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Kulean Microsystems

USA . 4,868 parts In-Stock

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TANS Electronics

Latvia . 4,743 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,426 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 2,180 parts In-Stock

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Problanco Electronics

Mexico . 1,850 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,617 parts In-Stock

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Authorized Procurement Solutions

USA . 1,500 parts In-Stock

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Northwest PG Solutions

USA . 1,015 parts In-Stock

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UHIMA Technologies

Türkiye . 939 parts In-Stock

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Corphita

USA . 497 parts In-Stock

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Robosynatics

Brazil . 250 parts In-Stock

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$1.709

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$1.583

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$1.583

250

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$1.709

$1.583

$1.583

Lucentia Tech

USA . 250 parts In-Stock

1+ parts

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$1.709

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$1.583

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$1.583

250

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$1.709

$1.583

$1.583

Native Components

USA . 68 parts In-Stock

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Overview

Enhance your electronic projects with the BC639G from Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) that offers unmatched performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor is ideal for various applications, providing customers with efficient and precise signal amplification. With a maximum collector-emitter voltage of 80V and a current gain of 40, the BC639G ensures optimal performance and durability. Trust Onsemi's expertise and elevate your projects with the BC639G today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a long lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in signal amplification applications, making this transistor versatile.

Configuration: SINGLE

Simplified design with a single transistor configuration for ease of use.

Maximum Power Dissipation (Abs): 0.625 W

Can handle high power dissipation levels, suitable for various applications.

Maximum Operating Temperature: 150 °C

Operates at high temperatures without compromising performance, ideal for industrial environments.

Maximum Collector-Emitter Voltage: 80 V

Capable of handling high voltages, making it suitable for a wide range of electronic circuits.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for fast switching speeds, ideal for applications requiring quick response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC639G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-226

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC639G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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