Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
NJVMJD45H11RLG
Onsemi
NJVMJD45H11RLG by Onsemi is a PNP BJT transistor for switching applications. It has a max collector-emitter voltage of 80V, max collector current of 8A, and min DC current gain of 40. Suitable for small outline packages in automotive electronics due to AEC-Q101 compliance.
COLLECTOR
8 A
80 V
SINGLE
40
R-PSSO-G2
e3
1
2
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
PNP
20 W
AEC-Q101
Other Transistors
YES
MATTE TIN
GULL WING
30
SWITCHING
SILICON
90 MHz
BD652-S
Bourns
The Bourns BD652-S is a PNP Darlington transistor with 750 min hFE, 120V VCE, and 8A IC. Ideal for power applications in industries like automotive and telecommunications due to its high current gain and collector-emitter voltage capabilities.
120 V
DARLINGTON
750
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
NOT SPECIFIED
NO
THROUGH-HOLE
BD651-S
The Bourns BD651-S is a NPN Darlington transistor with 750 min hFE, 120V VCE, and 8A IC. Ideal for power applications in industries like automotive and telecommunications due to its high current gain and collector-emitter voltage capabilities.
NPN
BDX53CS
Motorola
BDX53CS by Motorola is a NPN Darlington transistor with a min DC current gain of 750 and max collector-emitter voltage of 100V. Ideal for switching applications, it has a max collector current of 8A. This through-hole transistor in plastic/epoxy package is suitable for flange mount installations.
100 V
Not Qualified
BDX54CS
Motorola's BDX54CS is a PNP power BJT with a Darlington configuration. It has a max collector-emitter voltage of 100V and max collector current of 8A, making it ideal for switching applications. With a min hFE of 750, this transistor is designed for high-performance in various electronic circuits.
BDX53BFP
STMicroelectronics
BDX53BFP by STMicroelectronics is a power bipolar junction transistor (BJT) with NPN polarity. It has a max VCEsat of 2V and can handle a max collector current (IC) of 8A. This transistor is commonly used for switching applications.
ISOLATED
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
29 W
25 W
2 V
BUL58D
BUL58D by STMicroelectronics is a NPN Power BJT with 450V VCE, 8A IC, and 75W Ptot. Ideal for switching applications, it features a built-in diode and operates up to 150°C. Package style is flange mount with through-hole terminals.
HIGH RELIABILITY
450 V
SINGLE WITH BUILT-IN DIODE
5
85 W
75 W
Matte Tin (Sn)
1980 ns
BU808DFI
BU808DFI by STMicroelectronics is an NPN Darlington BJT designed for switching applications. It features a max VCEsat of 1.6V, supports up to 8A collector current, and operates at temperatures up to 150 °C. Ideal for high-power circuits with efficient thermal management.
700 V
60
TO-218
52 W
50 W
3800 ns
1.6 V
NTE243
Nte Electronics
NTE243 by Nte Electronics is a NPN BJT with Darlington configuration, ideal for amplifier applications. With max power dissipation of 100W (abs) and 150W (ambient), it offers hFE of min 100. Featuring VCE of 80V and IC of 8A, this silicon transistor has a round package shape for flange mount.
100
TO-3
O-MBFM-P2
METAL
ROUND
150 W
100 W
PIN/PEG
BOTTOM
AMPLIFIER
D44H11FP
D44H11FP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 36W, a collector-emitter voltage of 80V, and operates at up to 150 °C. Ideal for high-performance electronic circuits requiring reliable control.
36 W
STC08DE150HP
STC08DE150HP from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 42W, supports up to 8A collector current, and operates at temperatures up to 125 °C. Ideal for efficient circuit designs with its compact flange mount package.
SINGLE WITH BUILT-IN FET AND DIODE
4.5
TO-247
R-PSFM-T4
4
125 Cel
42 W
TIN
STC08DE150HV
STC08DE150HV from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 156W, operates at up to 150 °C, and supports collector currents of 8A. Ideal for high-performance electronic circuits.
156 W
STP08IE120F4
STP08IE120F4 from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 21W, supports up to 8A collector current, and operates at temperatures up to 150 °C. Ideal for efficient power management in electronic circuits.
TO-220
245
21 W
2STA1694
2STA1694 by STMicroelectronics is a PNP power BJT designed for amplifier applications. It features a max power dissipation of 80W, operates up to 150 °C, and supports collector-emitter voltages of 120V. Its robust design ensures reliable performance in various electronic circuits.
70
80 W
20 MHz
2STC4467
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 8 A;
BUT12AI,127
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 110 W; Maximum Collector Current (IC): 8 A; Transistor Element Material: SILICON;
14
110 W
4800 ns
1000 ns
1.5 V
BUT12AX,127
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 23 W; Maximum Collector Current (IC): 8 A; Terminal Form: THROUGH-HOLE;
10
23 W
BDX53BTU
Fairchild Semiconductor
Fairchild Semiconductor's BDX53BTU is a NPN Darlington transistor with built-in diode, ideal for switching applications. With a max collector-emitter voltage of 80V and max collector current of 8A, it can handle up to 60W power dissipation. This through-hole transistor has a min DC current gain of 750 and operates at temperatures up to 150°C.
DARLINGTON WITH BUILT-IN DIODE
60 W
ST13007DFP
ST13007DFP by STMicroelectronics is a NPN BJT transistor with 400V VCEO, 8A IC, and 36W Ptot. It's used for switching applications due to its single configuration with built-in diode. The package style is flange mount with through-hole terminals in a rectangular shape.
400 V
8
MJD128T4
MJD128T4 by Onsemi is a PNP Darlington transistor with 120V max collector-emitter voltage, 8A max collector current, and 20W max power dissipation. Ideal for switching applications in small outline packages with Gull Wing terminals.
e0
235
TIN LEAD
MJD44H11-001
Onsemi's MJD44H11-001 is a NPN BJT transistor with 80V VCE, 8A IC, and 20W Pd. Ideal for switching applications, it has hFE of 40, operates up to 150 °C, and features SILICON element material. Suitable for various power electronics projects requiring high-speed performance.
R-PSIP-T3
IN-LINE
Tin/Lead (Sn/Pb)
85 MHz
MJD45H11-001
MJD45H11-001 by Onsemi is a PNP BJT transistor with 80V VCEO, 8A IC, and 20W power dissipation. Ideal for switching applications, it has a min hFE of 40 and operates up to 150 °C. The package style is in-line with through-hole terminals.
MJF18008G
The Onsemi MJF18008G is a NPN BJT transistor with 450V VCEO, 8A IC, and 45W Ptot. Ideal for switching applications, it has a min hFE of 6 and operates up to 150°C. Its package style is flange mount with through-hole terminals.
6
45 W
UL RECOGNIZED
13 MHz
MJD44H11T5
The Onsemi MJD44H11T5 is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of 40 min and operates up to 150 °C. Its Gull Wing terminals make it suitable for surface mount designs in various electronic systems.
MJW21191G
The Onsemi MJW21191G is a PNP BJT transistor with 150V VCE, 8A IC, and 125W power dissipation. Ideal for amplifier applications, it has a min hFE of 5 and operates up to 150 °C. The package style is flange mount with a rectangular shape and through-hole terminals.
150 V
TO-247AE
125 W
4 MHz
MJW21192G
MJW21192G by Onsemi is a NPN Power BJT with 125W power dissipation, 150V max collector-emitter voltage, and 8A max collector current. Ideal for amplifier applications due to its single configuration and silicon element material.
2N6040G
2N6040G by Onsemi is a PNP power BJT with Darlington configuration, built-in diode, and resistor. It has a max collector-emitter voltage of 60V, max current of 8A, and min DC current gain of 1000. Ideal for switching applications due to its high power dissipation of 75W and operating temp up to 150°C.
LEADFORM OPTIONS ARE AVAILABLE
60 V
1000
2N6042G
2N6042G by Onsemi is a PNP BJT with 100V VCEO, 8A IC, and 75W power dissipation. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. With an hFE of 1000, it operates b/w -65°C to 150°C in a flange mount package.
-65 Cel
BDX54BG
BDX54BG by Onsemi is a PNP power BJT with 60W max power dissipation, 80V max collector-emitter voltage, and 8A max collector current. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a plastic/epoxy package. Operating at up to 150°C, it has a min hFE of 750 and fT of 4MHz.
BDX54CG
Onsemi's BDX54CG is a PNP power BJT with 100V VCEO and 8A IC, ideal for amplifier applications. Featuring a built-in diode and resistor, it has a min hFE of 750 and can handle up to 60W power dissipation. With a max operating temperature of 150°C, this transistor is designed in a rectangular package with through-hole terminals.
MJE5850G
MJE5850G by Onsemi is a PNP power BJT with 300V VCE, 8A IC, and 80W Ptot. It features a built-in diode and resistor for switching applications. The transistor has a min hFE of 5 and operates up to 150°C, making it suitable for high-power tasks.
300 V
SINGLE WITH BUILT-IN DIODE AND RESISTOR
Tin (Sn)
MJE5851G
MJE5851G by Onsemi is a PNP BJT with 80W power dissipation, 350V max. collector-emitter voltage, and 8A max. collector current. Ideal for switching applications, it features a single configuration with built-in diode and resistor in a rectangular package suitable for flange mount installations.
350 V
TIP101G
TIP101G by Onsemi is a NPN BJT with Darlington configuration, ideal for amplifier applications. It has a max power dissipation of 80W, hFE of 200, and max collector current of 8A. With a max operating temp of 150°C and VCE of 80V, it's suitable for various power control circuits.
200
TIP106G
TIP106G by Onsemi is a PNP power BJT with 80V VCEO, 8A IC, and 200 hFE. It features a Darlington configuration with built-in diode and resistor, ideal for amplifier applications. The transistor has a max power dissipation of 80W and operates up to 150 °C temperature in a rectangular package style.
TIP131G
TIP131G by Onsemi is a NPN Darlington transistor with 80V max collector-emitter voltage, 8A max collector current, and 70W max power dissipation. Ideal for amplifier applications due to its high DC current gain of 1000 (hFE). Package style: Flange mount, terminal form: Through-hole.
70 W
TIP132G
TIP132G by Onsemi is a NPN Darlington BJT with 100V VCEO, 8A IC, and 70W Ptot. Ideal for amplifier applications, it has hFE of 1000 and can operate up to 150 °C. Package style is flange mount with through-hole terminals.
NJVMJD44H11RLG
NJVMJD44H11RLG by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it operates up to 150°C and has an hFE of at least 40. Suitable for surface mount designs in automotive electronics due to AEC-Q101 compliance.
MJD44H11T5G
MJD44H11T5G by Onsemi is a NPN Power BJT with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of 40 and operates up to 150 °C. Its small outline package makes it suitable for surface mount designs.
STC08IE120HV
STC08IE120HV from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 208 W, operates up to 150 °C, and supports collector-emitter voltages of 1200 V. Ideal for high-performance electronic circuits.
1200 V
208 W
NJVMJD122T4G-VF01
NJVMJD122T4G-VF01 by Onsemi is a NPN BJT with Darlington configuration, hFE of 100, and VCE of 100V. Ideal for amplifier applications, it operates b/w -65 to 150°C with IC up to 8A. Suitable for surface mount with Gull Wing terminals in a small outline package.
NJVMJD44H11RLG-VF01
NJVMJD44H11RLG-VF01 by Onsemi is a NPN BJT transistor with 80V VCE, 8A IC, and 85MHz fT. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and small outline package style.
Matte Tin (Sn) - annealed
NJVMJD45H11RLG-VF01
NJVMJD45H11RLG-VF01 by Onsemi is a PNP BJT transistor for switching applications. It has a hFE of 40, Vce of 80V, and Ic of 8A. Ideal for small outline packages in automotive electronics due to AEC-Q101 compliance and fT of 90MHz.
2N6055PBFREE
Central Semiconductor
2N6055PBFREE by Central Semiconductor is a NPN Darlington BJT with max. collector-emitter voltage of 60V and max. collector current of 8A. It has a min DC current gain of 100, making it ideal for switching applications in various industries due to its high transition frequency of 4MHz and wide operating temperature range from -65°C to 200°C.
200 Cel
MATTE TIN OVER NICKEL
© 2023 All rights reserved
