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MJD44H11T5

Onsemi

MJD44H11T5 by Onsemi

The Onsemi MJD44H11T5 is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of 40 min and operates up to 150 °C. Its Gull Wing terminals make it suitable for surface mount designs in various electronic systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 7,592 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 1,008 parts In-Stock

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Metaverse IC Inc.

Canada . 38,652 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 19,783 parts In-Stock

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Kulean Microsystems

USA . 7,690 parts In-Stock

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TANS Electronics

Latvia . 5,094 parts In-Stock

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SupplyDigital Components

Austria . 4,082 parts In-Stock

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Corphita

USA . 1,848 parts In-Stock

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UHIMA Technologies

Türkiye . 715 parts In-Stock

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Corohmni

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Problanco Electronics

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Overview

Upgrade your power electronics with the MJD44H11T5 by Onsemi. Manufactured with superior quality and precision, this Power Bipolar Junction Transistor (BJT) is designed for high-performance switching applications. With a maximum collector-emitter voltage of 80V and a maximum collector current of 8A, this NPN transistor offers reliable and efficient operation. Its small outline package makes it perfect for space-constrained designs. Trust Onsemi for unparalleled reliability and performance in your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, ideal for applications where weight and robustness are important factors.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering good efficiency and performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast switching speeds and efficient performance.

Maximum Power Dissipation (Abs): 20 W

With a high maximum power dissipation, this transistor can handle a significant amount of power, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage ensures that this transistor can handle higher voltage levels, making it versatile for various applications.

Maximum Collector Current (IC): 8 A

With a high maximum collector current rating, this transistor can handle large currents, making it suitable for high-power applications.

Nominal Transition Frequency (fT): 85 MHz

The high nominal transition frequency indicates that this transistor can operate at high frequencies, making it suitable for applications requiring fast signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD44H11T5 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJD44H11T5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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