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INDUSTRIAL Flash Memory 964

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
LH28F160S5HT-TW by Sharp Corporation

LH28F160S5HT-TW

Sharp Corporation

LH28F160S5HT-TW by Sharp Corp is a 1MX16 NOR Flash Memory with 90ns access time, operating at -40 to 85°C. It features a supply voltage of 4.5-5.5V, parallel interface, and industrial temperature grade. Ideal for applications requiring high-speed data storage in compact devices like smartphones and IoT gadgets.

90 ns

8

R-PDSO-G56

e6

18.4 mm

16777216 bit

FLASH

16

3

1

56

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

250

5

Not Qualified

1.19 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Bismuth (Sn/Bi)

GULL WING

.5 mm

DUAL

10

NOR TYPE

14 mm

AT29BV010A-12JU by Atmel

AT29BV010A-12JU

Atmel

Atmel's AT29BV010A-12JU is a 128Kx8 NOR flash memory chip with 3V nominal voltage. Operating in asynchronous mode, it offers fast access time of 120ns and low standby current of 0.00005Amp. Ideal for industrial applications requiring reliable non-volatile memory storage.

120 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e3

13.97 mm

1048576 bit

FLASH

8

2

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

245

3/3.3

2.7

Not Qualified

3.556 mm

8K,112K,8K

.00005 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

20 ms

AT29C040A-90TU by Atmel

AT29C040A-90TU

Atmel

Atmel's AT29C040A-90TU is a 512Kx8 NOR flash memory with 2K sectors and 256-word pages. Operating at 5V, it offers fast access time of 90ns and supports asynchronous mode. Ideal for industrial applications requiring reliable non-volatile memory in small outline packages.

90 ns

BOTTOM/TOP

NO

YES

R-PDSO-G32

e3

18.4 mm

4194304 bit

FLASH

8

3

1

2K

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

256

PARALLEL

260

5

5

Not Qualified

1.2 mm

256

.0003 Amp

Flash Memories

40 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

10 ms

AT29LV020-10TU by Atmel

AT29LV020-10TU

Atmel

Atmel's AT29LV020-10TU is a 256Kx8 NOR flash memory with 3.3V supply, operating at -40 to 85°C. It features asynchronous mode, 100ns access time, and 1K sectors. Ideal for industrial applications requiring fast data access and reliable non-volatile storage in compact designs.

100 ns

BOTTOM/TOP

NO

YES

R-PDSO-G32

e3

18.4 mm

2097152 bit

FLASH

8

3

1

1K

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

3

Not Qualified

1.2 mm

256

.00005 Amp

Flash Memories

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

YES

NOR TYPE

8 mm

20 ms

AT29LV512-12TU by Atmel

AT29LV512-12TU

Atmel

Atmel's AT29LV512-12TU is a 64KX8 NOR flash memory with 512 sectors, operating at 3.3V. It offers 10000 write/erase cycles, 120ns access time, and supports asynchronous mode. Ideal for industrial applications requiring reliable non-volatile memory in a small outline package.

120 ns

NO

YES

10000 Write/Erase Cycles

R-PDSO-G32

e3

18.4 mm

524288 bit

FLASH

8

3

1

512

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

128

PARALLEL

260

3.3

3

Not Qualified

1.2 mm

128

.00005 Amp

Flash Memories

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

20 ms

AT29C512-70JU by Atmel

AT29C512-70JU

Atmel

AT29C512-70JU by Atmel is a 64KX8 NOR type flash memory chip with 512 sectors of 128 words each. Operating at 5V, it offers fast access time of 70ns and endurance of 10k write/erase cycles. Ideal for industrial applications requiring reliable parallel memory storage in compact form factor.

70 ns

NO

YES

10000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

524288 bit

FLASH

8

2

1

512

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

128

PARALLEL

245

5

5

Not Qualified

3.556 mm

128

.0003 Amp

Flash Memories

50 mA

5.25 V

4.75 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

10 ms

AT29C512-90JU by Atmel

AT29C512-90JU

Atmel

AT29C512-90JU by Atmel is a 64KX8 NOR flash memory chip with 512 sectors, operating at 5V. It has an endurance of 10k write/erase cycles, max access time of 90ns, and supports data polling. Ideal for industrial applications requiring reliable non-volatile memory with fast access times.

90 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

NO

YES

10000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

524288 bit

FLASH

8

2

1

512

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

128

PARALLEL

245

5

5

Not Qualified

3.556 mm

128

.0003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

10 ms

AT29C010A-90JU by Atmel

AT29C010A-90JU

Atmel

AT29C010A-90JU by Atmel is a 128Kx8 NOR flash memory chip with asynchronous operation, 90 ns access time, and 5V programming voltage. It is ideal for industrial applications requiring fast data polling and 3-STATE output characteristics in a compact chip carrier package.

90 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e3

13.97 mm

1048576 bit

FLASH

8

2

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

245

5

5

Not Qualified

3.556 mm

8K,112K,8K

.00003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

10 ms

AT29C020-70TU by Atmel

AT29C020-70TU

Atmel

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: TSOP1; Package Shape: RECTANGULAR; Toggle Bit: YES;

70 ns

BOTTOM/TOP

NO

YES

R-PDSO-G32

e3

18.4 mm

2097152 bit

FLASH

8

3

1

1K

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

5

Not Qualified

1.2 mm

256

.0003 Amp

Flash Memories

40 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

10 ms

AT29C010A-70JU by Atmel

AT29C010A-70JU

Atmel

Atmel's AT29C010A-70JU is a 128Kx8 NOR flash memory chip with 131,072 words. Operating at 5V, it has a max access time of 70ns and supports asynchronous mode. Ideal for industrial applications requiring fast data polling and parallel programming with a temperature range of -40 to 85°C.

70 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e3

13.97 mm

1048576 bit

FLASH

8

2

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

245

5

5

Not Qualified

3.556 mm

8K,112K,8K

.00003 Amp

Flash Memories

50 mA

5.25 V

4.75 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

10 ms

MX29LV040CQI-90G by Macronix

MX29LV040CQI-90G

Macronix

MX29LV040CQI-90G by Macronix is a 512KX8 NOR flash memory with a max access time of 90 ns. It operates at a nominal voltage of 3V and has a temperature grade of industrial. This flash memory is commonly used in applications that require high-speed data storage and retrieval.

90 ns

YES

YES

YES

R-PQCC-J32

e3

14.05 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

3

Not Qualified

3.55 mm

64K

.000005 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin (Sn)

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

MX29LV400CBTI-70G by Macronix

MX29LV400CBTI-70G

Macronix

Macronix's MX29LV400CBTI-70G is a 48-terminal NOR flash memory with 4MX16 organization, operating at 3V. It offers fast access time of 70ns and supports asynchronous mode. Ideal for industrial applications requiring high-density parallel memory with common flash interface.

70 ns

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

67108864 bit

FLASH

16

3

1

1,2,1,7

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.000005 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin (Sn)

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

MX29LV800CBXEI-70G by Macronix

MX29LV800CBXEI-70G

Macronix

Macronix's MX29LV800CBXEI-70G is an 8MX16 NOR flash memory with 8388608 words, operating at 3V. It features a low profile grid array package and offers fast access time of 70ns. Ideal for industrial applications requiring high-density memory with parallel interface.

70 ns

8

BOTTOM

YES

YES

YES

R-PBGA-B48

e1

8 mm

134217728 bit

FLASH

16

1

1,2,1,15

48

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

3/3.3

3

Not Qualified

YES

1.3 mm

16K,8K,32K,64K

.000005 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

M29F010B70K6E by STMicroelectronics

M29F010B70K6E

STMicroelectronics

M29F010B70K6E from STMicroelectronics is a 1Mb NOR Flash memory with a 5V supply, featuring an asynchronous operating mode and 70 ns max access time. It supports industrial applications with -40 °C to 85 °C temp range and offers 100k write/erase cycles. This compact chip carrier design ensures reliable performance in various electronic devices.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

250

5

5

Not Qualified

3.56 mm

16K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

MT29F4G08BABWPET by Micron Technology

MT29F4G08BABWPET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Sectors/Size: 4K;

18 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

4294967296 bit

FLASH

8

1

4K

48

536870912 words

512M

ASYNCHRONOUS

85 Cel

-40 Cel

512MX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

2K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.0001 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

M29F010B45K6E by STMicroelectronics

M29F010B45K6E

STMicroelectronics

M29F010B45K6E from STMicroelectronics is a 1Mb NOR Flash memory with a 5V supply, featuring an asynchronous operating mode and a max access time of 45 ns. It supports industrial applications with -40 °C to 85 °C temp range and offers 100k write/erase cycles. This compact chip carrier design ensures reliable performance in various electronic devices.

45 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

250

5

5

Not Qualified

3.56 mm

16K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

M29F010B70N6E by STMicroelectronics

M29F010B70N6E

STMicroelectronics

M29F010B70N6E from STMicroelectronics is a NOR flash memory with 128K x 8 organization, operating at 5V. It features a max access time of 70 ns and supports up to 100,000 write/erase cycles. Ideal for industrial applications requiring reliable data storage in compact designs.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e3/e6

18.4 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSSOP

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

5

5

Not Qualified

1.2 mm

16K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

8 mm

M29F200BB70N6E by STMicroelectronics

M29F200BB70N6E

STMicroelectronics

M29F200BB70N6E from STMicroelectronics is a 2Mbit NOR Flash memory with a 5V supply, featuring a max access time of 70 ns and endurance of 100K write/erase cycles. Its compact SOIC package makes it ideal for industrial applications. Operating b/w -40 °C to 85 °C ensures reliability in harsh environments.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

18.4 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm

M29F200BT70N6E by STMicroelectronics

M29F200BT70N6E

STMicroelectronics

M29F200BT70N6E from STMicroelectronics is a 2Mbit NOR Flash memory with a 5V supply, featuring a max access time of 70 ns and endurance of 100K write/erase cycles. It operates asynchronously in a compact SOIC package, ideal for industrial applications. With dual terminals and a wide temp range (-40 °C to 85 °C), it ensures reliable performance in demanding environments.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

18.4 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm

M29F040B45K6E by STMicroelectronics

M29F040B45K6E

STMicroelectronics

M29F040B45K6E from STMicroelectronics is a 512Kx8 NOR Flash memory with a 5V supply, ideal for industrial applications. It features an asynchronous operating mode, max access time of 45 ns, and supports up to 100k write/erase cycles. This compact chip carrier design ensures reliable performance in harsh environments.

45 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

5

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29F040B70N6E by STMicroelectronics

M29F040B70N6E

STMicroelectronics

M29F040B70N6E from STMicroelectronics is a 512Kx8 NOR Flash memory with a 5V supply, ideal for industrial applications. It features an asynchronous mode, operates b/w -40 °C to 85 °C, and supports up to 100k write/erase cycles. Its compact SOIC package ensures efficient space utilization in electronic designs.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e3/e6

18.4 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

5

5

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

8 mm

M29W040B55K6E by STMicroelectronics

M29W040B55K6E

STMicroelectronics

M29W040B55K6E from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, ideal for industrial applications. It features an asynchronous mode, 100k write/erase cycles, and operates b/w -40 °C to 85 °C. Its compact design ensures efficient surface mounting in various devices.

55 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3.3

3

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

20 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29W040B70N6E by STMicroelectronics

M29W040B70N6E

STMicroelectronics

M29W040B70N6E from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, ideal for industrial applications. It features an asynchronous operating mode, 70 ns max access time, and supports up to 100K write/erase cycles. Its compact SOIC package ensures efficient space utilization in designs.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e3/e6

18.4 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

1.2 mm

64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

8 mm

M29W200BB70N6E by STMicroelectronics

M29W200BB70N6E

STMicroelectronics

M29W200BB70N6E from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring a max access time of 70 ns and endurance of 100K write/erase cycles. Its compact SOIC package makes it ideal for industrial applications. Operating in asynchronous mode, it ensures reliable data storage across various temperatures.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

20 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm

M29W200BT70N6E by STMicroelectronics

M29W200BT70N6E

STMicroelectronics

M29W200BT70N6E from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring a max access time of 70 ns and endurance of 100K write/erase cycles. Its compact SOIC package makes it ideal for industrial applications. Operating b/w -40 °C to 85 °C ensures reliability in harsh environments.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

20 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm

AT49BV163D-70TU by Atmel

AT49BV163D-70TU

Atmel

Atmel's AT49BV163D-70TU is a 1MX16 NOR flash memory with 8K,64K sector size. Operating at -40 to 85 °C, it has a standby current of 0.000025A and access time of 70ns. Ideal for industrial applications requiring fast data access and reliable non-volatile storage.

70 ns

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

16777216 bit

FLASH

16

3

1

8,31

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.000025 Amp

Flash Memories

25 mA

3.6 V

2.65 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F400BB70N6E by STMicroelectronics

M29F400BB70N6E

STMicroelectronics

M29F400BB70N6E from STMicroelectronics is a 5V NOR Flash memory with a 256Kx16 organization, ideal for industrial applications. It features a max access time of 70 ns and supports up to 100,000 write/erase cycles. Its compact SOIC package ensures efficient surface mounting.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm

M29F400BT70N6E by STMicroelectronics

M29F400BT70N6E

STMicroelectronics

M29F400BT70N6E from STMicroelectronics is a 5V NOR Flash memory with a 256Kx16 organization, ideal for industrial applications. It features a max access time of 70 ns and supports up to 100k write/erase cycles. Its compact SOIC package ensures efficient surface mounting.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm

M29W010B70K6E by STMicroelectronics

M29W010B70K6E

STMicroelectronics

M29W010B70K6E from STMicroelectronics is a NOR flash memory with a 128Kx8 organization, operating at 3.3V and supporting asynchronous mode. It features an industrial temperature range of -40 °C to 85 °C and offers up to 100,000 write/erase cycles. Ideal for embedded applications, it ensures reliable data storage in compact designs.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

2.7

Not Qualified

3.56 mm

16K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29W010B70N6E by STMicroelectronics

M29W010B70N6E

STMicroelectronics

M29W010B70N6E from STMicroelectronics is a NOR flash memory with a 128K x 8 organization, operating at 3.3V and featuring a max access time of 70 ns. It supports asynchronous operation and offers industrial-grade temperature range (-40 °C to 85 °C). Ideal for embedded applications, it ensures high endurance with up to 100k write/erase cycles.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e3/e6

18.4 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSSOP

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

1.2 mm

16K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

8 mm

MX29GL320EBTI-70G by Macronix

MX29GL320EBTI-70G

Macronix

Macronix's MX29GL320EBTI-70G is a 32Mb NOR flash memory with 2MX16 organization, operating at 3V. It features an industrial temperature grade, parallel interface, and offers fast access time of 70ns. Ideal for applications requiring high-speed data storage in harsh environments.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

33554432 bit

FLASH

16

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.0001 Amp

Flash Memories

100 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F400BB70M6E by STMicroelectronics

M29F400BB70M6E

STMicroelectronics

M29F400BB70M6E from STMicroelectronics is a 5V NOR Flash memory with a 256Kx16 organization, ideal for industrial applications. It features a max access time of 70 ns and supports up to 100k write/erase cycles. This compact SOIC package ensures reliable performance in various environments.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G44

e3/e4

28.2 mm

4194304 bit

FLASH

16

1

1,2,1,7

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

NOT SPECIFIED

5

5

Not Qualified

YES

2.62 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN/NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

13.3 mm

M29F400BT70M6E by STMicroelectronics

M29F400BT70M6E

STMicroelectronics

M29F400BT70M6E from STMicroelectronics is a 5V NOR Flash memory with a 256Kx16 organization, ideal for industrial applications. It features a max access time of 70 ns and supports up to 100k write/erase cycles. Its compact SO package ensures efficient surface mounting.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PDSO-G44

e3/e4

28.2 mm

4194304 bit

FLASH

16

1

1,2,1,7

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

NOT SPECIFIED

5

5

Not Qualified

YES

2.62 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN/NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

13.3 mm

IS25LP064D-JLLE by Integrated Silicon Solution

IS25LP064D-JLLE

Integrated Silicon Solution

IS25LP064D-JLLE by Integrated Silicon Solution is an 8MX8 Flash Memory with 67108864 bit memory density. It operates at a max clock frequency of 166 MHz and has a supply voltage range of 2.7V to 3.6V. Ideal for industrial applications requiring high-speed data storage in a compact form factor.

1

166 MHz

R-PDSO-N8

e3

8 mm

67108864 bit

FLASH

8

1

8

8388608 words

8M

SYNCHRONOUS

105 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3

.8 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin (Sn)

NO LEAD

1.27 mm

DUAL

30

6 mm

MX25U51245GXDI54 by Macronix

MX25U51245GXDI54

Macronix

Macronix MX25U51245GXDI54 is a 64MX8 NOR Flash Memory with 166 MHz clock frequency, SPI serial bus type. Operating at -40 to 85 °C, it offers 1.65-2V supply voltage range and 536MB memory density. Ideal for industrial applications requiring high-speed data storage in compact devices.

IT CAN ALSO CONFIGURED AS 256M X 2 AND 512M X 1

4

166 MHz

20

R-PBGA-B24

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

LBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

SERIAL

1.8

1.2 mm

SPI

.00018 Amp

35 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

MTFC128GAPALNA-AAT by Micron Technology

MTFC128GAPALNA-AAT

Micron Technology

MTFC128GAPALNA-AAT by Micron Technology is a flash memory with 128GX8 organization and 1099511627776 bit memory density. It operates in synchronous mode, has a temperature grade of INDUSTRIAL, and is suitable for use in various applications such as storage devices and embedded systems.

R-PBGA-B100

e1

18 mm

1099511627776 bit

FLASH CARD

8

1

100

137438953472 words

128G

SYNCHRONOUS

105 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

14 mm

MTFC128GAPALNA-AIT by Micron Technology

MTFC128GAPALNA-AIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

R-PBGA-B100

e1

18 mm

1099511627776 bit

FLASH CARD

8

1

100

137438953472 words

128G

SYNCHRONOUS

85 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

14 mm

MTFC128GAPALNS-AAT by Micron Technology

MTFC128GAPALNS-AAT

Micron Technology

MTFC128GAPALNS-AAT by Micron Technology is a 128GX8 flash memory with 1099511627776 bit density. Operating in synchronous mode, it has a thin profile and fine pitch package style. Ideal for industrial applications, it supports parallel programming with a supply voltage range of 2.7V to 3.6V.

R-PBGA-B153

e1

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

105 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

11.5 mm

MTFC128GAPALNS-AIT by Micron Technology

MTFC128GAPALNS-AIT

Micron Technology

MTFC128GAPALNS-AIT by Micron Technology is a 128GX8 flash memory with 1099511627776 bit density. Operating in synchronous mode, it has a temperature range of -40 to 85 °C and supports industrial applications. With a thin profile and fine pitch package style, it features 153 terminals in a grid array shape for surface mount assembly.

R-PBGA-B153

e1

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

85 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

11.5 mm

MTFC16GAPALNA-AAT by Micron Technology

MTFC16GAPALNA-AAT

Micron Technology

MTFC16GAPALNA-AAT by Micron Technology is a 16GX8 flash memory with 137.4Gb density and operates in industrial temperature range. It features synchronous operation, parallel interface, and thin profile grid array package suitable for various applications requiring high-speed data storage.

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

SYNCHRONOUS

105 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

14 mm

MTFC16GAPALNA-AIT by Micron Technology

MTFC16GAPALNA-AIT

Micron Technology

Micron Technology's MTFC16GAPALNA-AIT is a 16GX8 flash memory with 137.4Gb density, operating in industrial temperature range (-40 to 85°C). It features synchronous operation, parallel interface, and thin profile grid array package. Ideal for applications requiring high-speed data storage in harsh environments.

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

14 mm

MTFC32GAPALBH-AAT by Micron Technology

MTFC32GAPALBH-AAT

Micron Technology

MTFC32GAPALBH-AAT by Micron Technology is a 32GX8 flash memory with 34359738368 words capacity. It operates in synchronous mode, has a thin profile package style, and supports industrial temperature grade. Ideal for applications requiring high memory density and parallel data transfer at temperatures ranging from -40 to 105°C.

R-PBGA-B153

e1

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

11.5 mm

MTFC32GAPALBH-AIT by Micron Technology

MTFC32GAPALBH-AIT

Micron Technology

Micron Technology's MTFC32GAPALBH-AIT is a 32GX8 flash memory with 274877906944 bit memory density. Operating in synchronous mode, it has a thin profile and fine pitch grid array package style. Ideal for industrial applications, it supports parallel programming with a supply voltage range of 2.7V to 3.6V.

R-PBGA-B153

e1

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

11.5 mm

MTFC32GAPALNA-AAT by Micron Technology

MTFC32GAPALNA-AAT

Micron Technology

MTFC32GAPALNA-AAT by Micron Technology is a 32GX8 NAND flash memory with 34359738368 words capacity. It operates synchronously at up to 200 MHz clock frequency, suitable for industrial applications. With a thin profile and grid array package style, it offers hardware write protection and a wide temperature range from -40 to 105 °C.

200 MHz

NO

NO

R-PBGA-B100

e1

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

TBGA

BGA100,10X15,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

YES

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NO

NAND TYPE

14 mm

HARDWARE

MTFC32GAPALNA-AIT by Micron Technology

MTFC32GAPALNA-AIT

Micron Technology

Micron Technology's MTFC32GAPALNA-AIT is a 32GX8 NAND flash memory with 34359738368 words capacity. Operating at up to 200 MHz, it has a thin profile grid array package suitable for industrial applications. With hardware write protection and parallel interface, it offers reliable data storage in temperatures ranging from -40°C to 85°C.

200 MHz

NO

NO

R-PBGA-B100

e1

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

TBGA

BGA100,10X15,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

YES

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NO

NAND TYPE

14 mm

HARDWARE

MTFC64GAPALBH-AAT by Micron Technology

MTFC64GAPALBH-AAT

Micron Technology

MTFC64GAPALBH-AAT by Micron Technology is a 64GX8 flash memory with 549755813888 bit density. Operating in synchronous mode, it has a thin profile grid array package style and operates b/w -40 to 105 °C. Ideal for industrial applications requiring high-speed data storage and retrieval.

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

105 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

11.5 mm

MTFC64GAPALBH-AIT by Micron Technology

MTFC64GAPALBH-AIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: TFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

R-PBGA-B153

e1

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

11.5 mm

MTFC64GAPALNA-AAT by Micron Technology

MTFC64GAPALNA-AAT

Micron Technology

MTFC64GAPALNA-AAT by Micron Technology is a 64GX8 flash memory with 549755813888 bit density. Operating in synchronous mode, it has a temperature range of -40 to 105 °C and supports parallel programming at 2.7V. Ideal for industrial applications requiring high-speed data storage in a compact GRID ARRAY package.

R-PBGA-B100

e1

18 mm

549755813888 bit

FLASH CARD

8

1

100

68719476736 words

64G

SYNCHRONOUS

105 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

14 mm