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INDUSTRIAL Flash Memory 964

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MTFC64GAPALNA-AIT by Micron Technology

MTFC64GAPALNA-AIT

Micron Technology

Micron Technology's MTFC64GAPALNA-AIT is a 64GX8 NAND flash memory with 549755813888 bit density. Operating at up to 200 MHz, it features hardware write protection and industrial temperature grade. Ideal for applications requiring high-speed data storage in compact devices.

200 MHz

NO

NO

R-PBGA-B100

e1

18 mm

549755813888 bit

FLASH CARD

8

1

100

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TBGA

BGA100,10X15,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

YES

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NO

NAND TYPE

14 mm

HARDWARE

MTFC64GASAONS-AITES by Micron Technology

MTFC64GASAONS-AITES

Micron Technology

MTFC64GASAONS-AITES by Micron Technology is a 64GX8 NAND flash memory with 549755813888 bit density. Operating at 52 MHz, it has a thin profile and fine pitch package suitable for industrial applications. With a voltage range of 2.7V to 3.6V, this synchronous memory offers reliable performance in temperatures from -40°C to 95°C.

52 MHz

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

95 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.461 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

MTFC8GAMALNA-AIT by Micron Technology

MTFC8GAMALNA-AIT

Micron Technology

MTFC8GAMALNA-AIT by Micron Technology is a 8GX8 Flash Memory with 68719476736 bit memory density. Operating in synchronous mode, it has a temperature range of -40 to 85 °C and supports parallel programming. Ideal for industrial applications requiring high-speed data storage in a compact form factor.

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

14 mm

W25N512GWEIR by Winbond Electronics

W25N512GWEIR

Winbond Electronics

Winbond Electronics' W25N512GWEIR is a 64MX8 SLC NAND flash memory with 536870912-bit density. It operates at 1.8V, has a clock frequency of 104MHz, and supports synchronous mode. Ideal for industrial applications, it features a small outline package with very thin profile and no-lead terminal form.

1

104 MHz

R-PDSO-N8

8 mm

536870912 bit

FLASH

8

1

8

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

.8 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

SLC NAND TYPE

6 mm

IS25WP01G-RILE by Integrated Silicon Solution

IS25WP01G-RILE

Integrated Silicon Solution

IS25WP01G-RILE by Integrated Silicon Solution is a 128MX8 flash memory with 1.8V programming voltage and operates at up to 104MHz clock frequency. It is ideal for industrial applications requiring high memory density, low profile grid array package, and synchronous operation.

1

104 MHz

R-PBGA-B24

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

SERIAL

1.8

1.4 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

6 mm

MTFC16GJGEF-AITZ by Micron Technology

MTFC16GJGEF-AITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 169; Package Code: LFBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA169,14X14,20;

52 MHz

R-PBGA-B169

18 mm

137438953472 bit

FLASH CARD

8

1

169

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

LFBGA

BGA169,14X14,20

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.364 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

14 mm

MTFC16GLWDM-4MAITZ by Micron Technology

MTFC16GLWDM-4MAITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: LFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .5 mm;

52 MHz

R-PBGA-B153

13 mm

137438953742 bit

FLASH CARD

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

LFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.364 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

MTFC16GLWDQ-4MAITZ by Micron Technology

MTFC16GLWDQ-4MAITZ

Micron Technology

Micron Technology's MTFC16GLWDQ-4MAITZ is a 16GX8 NAND flash memory with 137.4 Gb density, operating at up to 52 MHz clock frequency. Ideal for industrial applications, it features a low profile grid array package and operates in synchronous mode.

52 MHz

R-PBGA-B100

18 mm

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

1.703 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

14 mm

MTFC32GJGEF-AITZ by Micron Technology

MTFC32GJGEF-AITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 169; Package Code: LFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

52 MHz

R-PBGA-B169

18 mm

274877906944 bit

FLASH CARD

8

1

169

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

LFBGA

BGA169,14X14,20

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.364 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

14 mm

MTFC32GJWDQ-4MAITZ by Micron Technology

MTFC32GJWDQ-4MAITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Length: 18 mm;

52 MHz

R-PBGA-B100

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

1.703 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

14 mm

MTFC4GLGDM-AITA by Micron Technology

MTFC4GLGDM-AITA

Micron Technology

MTFC4GLGDM-AITA by Micron Technology is a 4GX8 NAND flash memory with 34359738368 bit density. Operating in synchronous mode at up to 52 MHz clock frequency, it offers 4294967296 words capacity for industrial applications. With a thin profile and fine pitch package style, this memory IC supports parallel communication at a voltage range of 2.7V to 3.6V.

52 MHz

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.374 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

MTFC4GMWDM-3MAITA by Micron Technology

MTFC4GMWDM-3MAITA

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: LFBGA; Package Shape: RECTANGULAR; No. of Words Code: 4G;

52 MHz

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

1.364 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC4GMWDQ-3MAITA by Micron Technology

MTFC4GMWDQ-3MAITA

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

52 MHz

R-PBGA-B100

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.703 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC8GLGDM-AITZ by Micron Technology

MTFC8GLGDM-AITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: TFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

52 MHz

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.374 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

MTFC8GLWDM-AITA by Micron Technology

MTFC8GLWDM-AITA

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: LFBGA; Package Shape: RECTANGULAR; Type: NAND TYPE;

52 MHz

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.364 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

MTFC8GLWDM-AITZ by Micron Technology

MTFC8GLWDM-AITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: LFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

52 MHz

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.364 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

MTFC8GLWDQ-3MAITA by Micron Technology

MTFC8GLWDQ-3MAITA

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA100,10X17,40;

52 MHz

R-PBGA-B100

18 mm

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.703 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC8GLWDQ-3MAITZ by Micron Technology

MTFC8GLWDQ-3MAITZ

Micron Technology

MTFC8GLWDQ-3MAITZ by Micron Technology is a NAND flash memory with 8GX8 organization, 52 MHz clock frequency, and 85°C max operating temp. Ideal for industrial applications requiring high-density storage in a compact form factor.

52 MHz

R-PBGA-B100

18 mm

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

1.703 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

14 mm

MTFC32GJWDQ-4LAITZ by Micron Technology

MTFC32GJWDQ-4LAITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 52 MHz;

52 MHz

R-PBGA-B100

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC4GLMDQ-AITA by Micron Technology

MTFC4GLMDQ-AITA

Micron Technology

MTFC4GLMDQ-AITA by Micron Technology is a 100-terminal flash memory with 4GX8 organization, operating at up to 52 MHz clock frequency. It features MLC NAND technology, industrial temperature grade, and parallel interface. Ideal for applications requiring high-speed data storage in compact devices.

52 MHz

R-PBGA-B100

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

1.703 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

MLC NAND TYPE

14 mm

MTFC8GLWDQ-3LAATA by Micron Technology

MTFC8GLWDQ-3LAATA

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.703 mm;

52 MHz

R-PBGA-B100

18 mm

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

SYNCHRONOUS

105 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.703 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC8GLWDQ-3LAITA by Micron Technology

MTFC8GLWDQ-3LAITA

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

52 MHz

R-PBGA-B100

18 mm

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MX25L51245GXDJ-10G by Macronix

MX25L51245GXDJ-10G

Macronix

MX25L51245GXDJ-10G by Macronix is a 128MX4 flash memory with a memory density of 536870912 bits. It operates at a max clock frequency of 104 MHz and has an industrial temperature grade. This flash memory is commonly used in applications that require high-speed data storage and retrieval.

ALSO CONFIGURED WITH 1-BIT WIDTH

2

104 MHz

R-PBGA-B24

8 mm

536870912 bit

FLASH

4

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX4

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

MTFDHBK1T0TDP-1AT12AIYY by Micron Technology

MTFDHBK1T0TDP-1AT12AIYY

Micron Technology

Micron Technology's MTFDHBK1T0TDP-1AT12AIYY is a RECTANGULAR flash memory with 1TX8 organization and TLC NAND type. Operating in ASYNCHRONOUS mode, it offers high memory density of 8796093022208 bit. Ideal for industrial applications due to its wide temperature range from -40 to 95 °C.

R-XSMA-N

8796093022208 bit

FLASH MODULE

8

1

1099511627776 words

1T

ASYNCHRONOUS

95 Cel

-40 Cel

1TX8

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

CMOS

INDUSTRIAL

NO LEAD

SINGLE

TLC NAND TYPE

MTFDHBK256TDP-1AT12AIYY by Micron Technology

MTFDHBK256TDP-1AT12AIYY

Micron Technology

Micron Technology's MTFDHBK256TDP-1AT12AIYY is a RECTANGULAR flash memory with 256GX8 organization and TLC NAND type. Operating in ASYNCHRONOUS mode, it offers a wide temperature range suitable for INDUSTRIAL applications. With MICROELECTRONIC ASSEMBLY package style, this CMOS technology-based device has a memory density of 2199023255552 bit.

R-XSMA-N

2199023255552 bit

FLASH MODULE

8

1

274877906944 words

256G

ASYNCHRONOUS

95 Cel

-40 Cel

256GX8

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

CMOS

INDUSTRIAL

NO LEAD

SINGLE

TLC NAND TYPE

MTFDHBK512TDP-1AT12AIYY by Micron Technology

MTFDHBK512TDP-1AT12AIYY

Micron Technology

Micron Technology's MTFDHBK512TDP-1AT12AIYY is a RECTANGULAR flash memory with 512GX8 organization and TLC NAND type. Operating in ASYNCHRONOUS mode, it offers 549755813888 words capacity suitable for INDUSTRIAL applications at temperatures ranging from -40 to 95 °C.

R-XSMA-N

4398046511104 bit

FLASH MODULE

8

1

549755813888 words

512G

ASYNCHRONOUS

95 Cel

-40 Cel

512GX8

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

CMOS

INDUSTRIAL

NO LEAD

SINGLE

TLC NAND TYPE

MTFDHBL064TDQ-1AT12ATYY by Micron Technology

MTFDHBL064TDQ-1AT12ATYY

Micron Technology

FLASH MODULE; Temperature Grade: INDUSTRIAL; Package Shape: RECTANGULAR; Organization: 64GX8; Maximum Operating Temperature: 105 Cel; No. of Words: 68719476736 words;

R-XBGA-B

549755813888 bit

FLASH MODULE

8

1

68719476736 words

64G

ASYNCHRONOUS

105 Cel

-40 Cel

64GX8

UNSPECIFIED

RECTANGULAR

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

TLC NAND TYPE

MTFDHBL128TDP-1AT12AIYY by Micron Technology

MTFDHBL128TDP-1AT12AIYY

Micron Technology

Micron Technology's MTFDHBL128TDP-1AT12AIYY is a RECTANGULAR flash memory with 128GX8 organization and TLC NAND type. Operating in ASYNCHRONOUS mode, it has an industrial temperature grade of -40 to 95 °C, making it suitable for high-performance applications.

R-XBGA-B

1099511627776 bit

FLASH MODULE

8

1

137438953472 words

128G

ASYNCHRONOUS

95 Cel

-40 Cel

128GX8

UNSPECIFIED

RECTANGULAR

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

TLC NAND TYPE

MTFDHBL128TDQ-1AT12ATYY by Micron Technology

MTFDHBL128TDQ-1AT12ATYY

Micron Technology

Micron Technology's MTFDHBL128TDQ-1AT12ATYY is a rectangular flash memory with 128GX8 organization and TLC NAND type. Operating in industrial temperature range (-40 to 105 °C), it offers 137B words capacity for various applications requiring high-density, asynchronous memory solutions.

R-XBGA-B

1099511627776 bit

FLASH MODULE

8

1

137438953472 words

128G

ASYNCHRONOUS

105 Cel

-40 Cel

128GX8

UNSPECIFIED

RECTANGULAR

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

TLC NAND TYPE

MTFDHBL256TDP-1AT12AIYY by Micron Technology

MTFDHBL256TDP-1AT12AIYY

Micron Technology

Micron Technology's MTFDHBL256TDP-1AT12AIYY is a RECTANGULAR flash memory with 256GX8 organization, TLC NAND type. Operating in ASYNCHRONOUS mode, it has an industrial temperature grade of -40 to 95 °C. Ideal for high-density storage applications.

R-XBGA-B

2199023255552 bit

FLASH MODULE

8

1

274877906944 words

256G

ASYNCHRONOUS

95 Cel

-40 Cel

256GX8

UNSPECIFIED

RECTANGULAR

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

TLC NAND TYPE

MTFDHBL256TDQ-1AT12ATYY by Micron Technology

MTFDHBL256TDQ-1AT12ATYY

Micron Technology

Micron Technology's MTFDHBL256TDQ-1AT12ATYY is a RECTANGULAR Flash Memory with 256GX8 organization, TLC NAND TYPE, and 2199023255552 bit memory density. It operates in ASYNCHRONOUS mode at temperatures ranging from -40 to 105 °C, making it ideal for INDUSTRIAL applications requiring high-speed data storage.

R-XBGA-B

2199023255552 bit

FLASH MODULE

8

1

274877906944 words

256G

ASYNCHRONOUS

105 Cel

-40 Cel

256GX8

UNSPECIFIED

RECTANGULAR

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

TLC NAND TYPE

MTFDHBL512TDP-1AT12AIYY by Micron Technology

MTFDHBL512TDP-1AT12AIYY

Micron Technology

MTFDHBL512TDP-1AT12AIYY by Micron Technology is a rectangular flash memory with 512GX8 organization, TLC NAND type, and industrial temperature grade. It operates asynchronously with a wide memory width of 8 bits. Ideal for applications requiring high-density storage in industrial environments.

R-XBGA-B

e1

4398046511104 bit

FLASH MODULE

8

1

549755813888 words

512G

ASYNCHRONOUS

95 Cel

-40 Cel

512GX8

UNSPECIFIED

RECTANGULAR

260

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

BOTTOM

30

TLC NAND TYPE

MTFDHBL512TDQ-1AT12ATYY by Micron Technology

MTFDHBL512TDQ-1AT12ATYY

Micron Technology

Micron Technology's MTFDHBL512TDQ-1AT12ATYY is a RECTANGULAR flash memory with 512GX8 organization and TLC NAND type. Operating in ASYNCHRONOUS mode, it has an industrial temperature grade of -40 to 105 °C, making it suitable for high-performance applications.

R-XBGA-B

4398046511104 bit

FLASH MODULE

8

1

549755813888 words

512G

ASYNCHRONOUS

105 Cel

-40 Cel

512GX8

UNSPECIFIED

RECTANGULAR

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

TLC NAND TYPE

MTFDHBM1T0TDP-1AT12AIYY by Micron Technology

MTFDHBM1T0TDP-1AT12AIYY

Micron Technology

Micron Technology's MTFDHBM1T0TDP-1AT12AIYY is a RECTANGULAR Flash Memory with 1TX8 organization, TLC NAND type, and CMOS technology. Operating in ASYNCHRONOUS mode at -40 to 95 °C, it offers 1099511627776 words capacity for industrial applications.

R-XBGA-B

8796093022208 bit

FLASH MODULE

8

1

1099511627776 words

1T

ASYNCHRONOUS

95 Cel

-40 Cel

1TX8

UNSPECIFIED

RECTANGULAR

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

TLC NAND TYPE

MTFDHBM1T0TDQ-1AT12ATYY by Micron Technology

MTFDHBM1T0TDQ-1AT12ATYY

Micron Technology

Micron Technology's MTFDHBM1T0TDQ-1AT12ATYY is a RECTANGULAR flash memory module with 8-bit memory width and 1TX8 organization. Operating in ASYNCHRONOUS mode, it offers high density of 8796093022208 bits for industrial applications at temperatures ranging from -40 to 105°C.

R-XBGA-B

8796093022208 bit

FLASH MODULE

8

1

1099511627776 words

1T

ASYNCHRONOUS

105 Cel

-40 Cel

1TX8

UNSPECIFIED

RECTANGULAR

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

TLC NAND TYPE

SST26VF016BEUI-104I/SN by Microchip Technology

SST26VF016BEUI-104I/SN

Microchip Technology

SST26VF016BEUI-104I/SN by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock freq., SPI serial bus. Ideal for industrial applications requiring 100K write/erase cycles, with 3V supply voltage and -40 to 85°C operating temp range.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-C48

4.89 mm

16777216 bit

FLASH

1

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

LSOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE, LOW PROFILE

SERIAL

3

TS 16949

1.68 mm

SPI

.000025 Amp

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

SST26VF032BEUI-104I/SM by Microchip Technology

SST26VF032BEUI-104I/SM

Microchip Technology

SST26VF032BEUI-104I/SM by Microchip: 32MX1 organization, 104 MHz clock frequency, SPI serial bus type. Ideal for industrial applications requiring NOR flash memory with 100000 write/erase cycles and 3V programming voltage.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

5.26 mm

33554432 bit

FLASH

1

1

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

3

TS 16949

2.03 mm

SPI

.000045 Amp

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

5.25 mm

HARDWARE/SOFTWARE

MTFC8GAMALBH-IT by Micron Technology

MTFC8GAMALBH-IT

Micron Technology

MTFC8GAMALBH-IT by Micron Technology is a NAND flash memory with 8GX8 organization, operating at up to 200 MHz. It features a thin profile grid array package and is suitable for industrial applications requiring high memory density and fast data transfer speeds.

200 MHz

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

2.7

1.1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC128GAPALNS-IT by Micron Technology

MTFC128GAPALNS-IT

Micron Technology

MTFC128GAPALNS-IT by Micron Technology is a 128GX8 NAND flash memory with 3-STATE output, operating at up to 200 MHz clock frequency. It features a thin profile grid array package suitable for industrial applications requiring high memory density and wide temperature range support.

200 MHz

R-PBGA-B153

e1

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

85 Cel

-40 Cel

128GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MTFC8GLWDM-AITATR by Micron Technology

MTFC8GLWDM-AITATR

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: LFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B153;

52 MHz

R-PBGA-B153

e1

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MTFC32GAPALBH-IT by Micron Technology

MTFC32GAPALBH-IT

Micron Technology

Micron Technology's MTFC32GAPALBH-IT is a 32GX8 NAND flash memory with 3-STATE output, operating at up to 200 MHz. It features a thin profile grid array package suitable for industrial applications. With a wide temperature range (-40 to 85°C) and high memory density (274877906944 bit), it is ideal for demanding environments requiring fast data storage and retrieval.

200 MHz

R-PBGA-B153

e1

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MT29F8G08ABABAWP-ITX:B by Micron Technology

MT29F8G08ABABAWP-ITX:B

Micron Technology

Micron Technology's MT29F8G08ABABAWP-ITX:B is an 8Gb SLC NAND flash memory with 3.3V supply voltage, operating from -40 to 85°C. It has a memory density of 8.58 Gb and is suitable for industrial applications requiring high reliability and performance in a surface-mount package.

NO

R-PDSO-G48

e3

8589934592 bit

FLASH

8

1

48

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

RECTANGULAR

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

DUAL

NO

SLC NAND TYPE

MT29F16G08ADBCAH4-IT:C by Micron Technology

MT29F16G08ADBCAH4-IT:C

Micron Technology

MT29F16G08ADBCAH4-IT:C by Micron Technology is a Flash Memory with 2GX8 organization, 8K sectors, and 4K page size. It is used in industrial applications with a temperature range of -40 to 85 °C.

30 ns

YES

NO

R-PBGA-B63

17179869184 bit

FLASH

8

8K

63

2147483648 words

2G

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4K

PARALLEL

1.8

1.8

Not Qualified

YES

256K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G16ABACAH4-IT:C by Micron Technology

MT29F8G16ABACAH4-IT:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm;

25 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

16

4K

63

536870912 words

512M

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

3/3.3

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G16ABBCAH4-IT:C by Micron Technology

MT29F8G16ABBCAH4-IT:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Type: SLC NAND TYPE;

30 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

16

4K

63

536870912 words

512M

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

128K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F16G16ADACAH4-IT:C by Micron Technology

MT29F16G16ADACAH4-IT:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; No. of Words Code: 1G;

25 ns

YES

NO

R-PBGA-B63

17179869184 bit

FLASH

16

8K

63

1073741824 words

1G

85 Cel

-40 Cel

1GX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

3/3.3

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F16G16ADBCAH4-IT:C by Micron Technology

MT29F16G16ADBCAH4-IT:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm;

30 ns

YES

NO

R-PBGA-B63

11 mm

17179869184 bit

FLASH

16

1

8K

63

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

MLC NAND TYPE

9 mm

MT29F8G08ABBCAH4-IT:C by Micron Technology

MT29F8G08ABBCAH4-IT:C

Micron Technology

MT29F8G08ABBCAH4-IT:C by Micron Technology is a 1.8V SLC NAND flash memory with 1GX8 organization, 4K sectors, and 256K sector size. It operates in industrial temperatures (-40 to 85 °C) with parallel interface and 0.8mm terminal pitch. Ideal for applications requiring high memory density and fast access times.

30 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

8

4K

63

1073741824 words

1G

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4K

PARALLEL

1.8

1.8

Not Qualified

YES

256K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE