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MTFDHBL128TDQ-1AT12ATYY

Micron Technology

MTFDHBL128TDQ-1AT12ATYY by Micron Technology

Micron Technology's MTFDHBL128TDQ-1AT12ATYY is a rectangular flash memory with 128GX8 organization and TLC NAND type. Operating in industrial temperature range (-40 to 105 °C), it offers 137B words capacity for various applications requiring high-density, asynchronous memory solutions.

Median Price

$62.430

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 82 parts In-Stock

1+ parts

$54.550

100+ parts

-

1k+ parts

-

10k+ parts

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82

$54.550

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-

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Verical

USA . 82 parts In-Stock

1+ parts

$54.550

100+ parts

-

1k+ parts

-

10k+ parts

-

82

$54.550

-

-

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DigiKey

USA . 51 parts In-Stock

1+ parts

$70.310

100+ parts

-

1k+ parts

-

10k+ parts

-

51

$70.310

-

-

-

Mouser Electronics

USA . 238 parts In-Stock

1+ parts

$99.730

100+ parts

$76.740

1k+ parts

-

10k+ parts

-

238

$99.730

$76.740

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-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,376 parts In-Stock

1+ parts

$51.822

100+ parts

-

1k+ parts

-

10k+ parts

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2,376

$51.822

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Vyrian

USA . 8,059 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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8,059

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-

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Chip Stock

USA . 430 parts In-Stock

1+ parts

-

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430

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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100

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$6.658

100+ parts

$6.059

1k+ parts

$5.460

10k+ parts

-

3,000

$6.658

$6.059

$5.460

-

Ampacity Inc.

Singapore . 96 parts In-Stock

1+ parts

$46.370

100+ parts

-

1k+ parts

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10k+ parts

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96

$46.370

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Corphita

USA . 1,489 parts In-Stock

1+ parts

$49.095

100+ parts

-

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1,489

$49.095

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

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1,000

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Overview

Experience the superior quality and reliability of Micron Technology with the MTFDHBL128TDQ-1AT12ATYY Flash Memory. This innovative product offers endless possibilities in various applications, providing customers with unmatched value and performance. With its industrial-grade temperature tolerance and advanced technology, this flash memory is designed to exceed expectations. Trust Micron Technology for all your memory needs and unlock the potential of cutting-edge technology.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy installation on circuit boards, making this product convenient for manufacturers.

Package Shape: RECTANGULAR

The rectangular shape provides a standardized form factor, ensuring compatibility with various devices and system designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent and concurrent data transfers, optimizing performance and efficiency.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions, improving reliability in rugged applications.

Organization: 128GX8

The 128GX8 organization offers a balanced combination of capacity and access speed, catering to a wide range of storage requirements.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable operation even in extreme cold environments.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature tolerance makes this product suitable for rugged and demanding industrial applications.

Technology: CMOS

CMOS technology enables low power consumption and high-speed operation, making this product energy-efficient and fast.

No. of Words: 137438953472 words

The large number of words supported enhances storage capacity, accommodating extensive data storage needs.

Memory Width: 8

An 8-bit memory width provides a balance between data transfer speed and storage efficiency, suitable for various applications.

Memory Density: 1099511627776 bit

High memory density offers ample storage space for large datasets, making this product ideal for high-capacity storage requirements.

Memory IC Type: FLASH MODULE

The use of flash memory technology provides fast read and write speeds, durability, and non-volatile storage, ensuring reliable data retention and access.

Technical Specifications

Flash Memory MTFDHBL128TDQ-1AT12ATYY attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-XBGA-B

Memory Density:

1099511627776 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Words:

137438953472 words

No. of Words Code:

128G

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128GX8

Package Body Material:

UNSPECIFIED

Package Shape:

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Position:

BOTTOM

Type:

TLC NAND TYPE

Trade Compliance

MTFDHBL128TDQ-1AT12ATYY Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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