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MTFC128GAPALNS-IT

Micron Technology

MTFC128GAPALNS-IT by Micron Technology

MTFC128GAPALNS-IT by Micron Technology is a 128GX8 NAND flash memory with 3-STATE output, operating at up to 200 MHz clock frequency. It features a thin profile grid array package suitable for industrial applications requiring high memory density and wide temperature range support.

Median Price

$140.081

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Avnet

USA . 5 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$140.081

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10

$140.081

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Cyclops Electronics Ltd

UK . 8,000 parts In-Stock

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Vyrian

USA . 3,998 parts In-Stock

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Chip Stock

USA . 3,300 parts In-Stock

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Digiode

USA . 652 parts In-Stock

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Flip Electronics

USA . 320 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 376 parts In-Stock

1+ parts

$4.053

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376

$4.053

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Aztec Data Supply Inc.

USA . 666 parts In-Stock

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$4.300

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Ampacity Inc.

Singapore . 5 parts In-Stock

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$11.000

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AZTECH Wire

Italy . 188 parts In-Stock

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$14.862

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Continental Prestige Electronics

USA . 1,911 parts In-Stock

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$137.280

1,911

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Netroflash

USA . 500 parts In-Stock

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$140.081

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$133.077

10k+ parts

$130.276

500

$140.081

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$133.077

$130.276

Argo Parts USA

USA . 3,882 parts In-Stock

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Corphita

USA . 1,135 parts In-Stock

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Microchip USA

USA . 474 parts In-Stock

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Authorized Procurement Solutions

USA . 434 parts In-Stock

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GreenTree Electronics

Israel . 138 parts In-Stock

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Overview

Discover the unparalleled quality of the MTFC128GAPALNS-IT by Micron Technology, a leading manufacturer in the industry. This flash memory device is designed to excel in various applications, offering reliable performance and efficiency. With its advanced features and benefits, customers can experience seamless data storage and retrieval, ensuring smooth operations and enhanced productivity. Upgrade your system with this top-notch product and unlock a world of possibilities. Trust Micron Technology for cutting-edge solutions that deliver exceptional value to your business.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material for protection and portability.

Surface Mount: YES

Easily mountable on PCBs for efficient integration.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data integrity and reliability.

Maximum Operating Temperature: 85 °C

Suitable for industrial environments with high temperature fluctuations.

Output Characteristics: 3-STATE

Allows for flexible data output options.

Technology: CMOS

CMOS technology provides low power consumption and high speed operation.

Technical Specifications

Flash Memory MTFC128GAPALNS-IT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

200 MHz

JESD-30 Code:

R-PBGA-B153

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

1099511627776 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

137438953472 words

No. of Words Code:

128G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128GX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NAND TYPE

Width:

11.5 mm

Trade Compliance

MTFC128GAPALNS-IT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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