Loading...

INDUSTRIAL Flash Memory 964

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MT28F400B3SG-8TET by Micron Technology

MT28F400B3SG-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

80 ns

TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G44

e0

28.02 mm

4194304 bit

FLASH

16

1

1,2,1,3

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.3

3

Not Qualified

2.8 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F400B3WG-8BET by Micron Technology

MT28F400B3WG-8BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Length: 18.4 mm;

80 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B3WG-8TET by Micron Technology

MT28F400B3WG-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Package Equivalence Code: TSSOP48,.8,20;

80 ns

TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

PC28F256P33BFE by Micron Technology

PC28F256P33BFE

Micron Technology

Micron Technology's PC28F256P33BFE is a 16Mx16 NOR flash memory with 3V nominal voltage. Operating in synchronous mode, it offers 16K and 64K sector sizes. Ideal for industrial applications, this thin-profile grid array package has a max operating temperature of 85°C.

95 ns

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

BOTTOM

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

PC28F256P33BFR by Micron Technology

PC28F256P33BFR

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V;

95 ns

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

BOTTOM

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

PC28F256P33TFE by Micron Technology

PC28F256P33TFE

Micron Technology

Micron Technology's PC28F256P33TFE is a 16Mx16 NOR flash memory with 3V nominal voltage. Operating in synchronous mode, it offers 16K and 64K sector sizes for industrial applications. With a max operating temperature of 85°C, this thin-profile grid array package has a parallel interface and supports common flash commands.

95 ns

TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

TOP

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

PC48F4400P0TB0EE by Micron Technology

PC48F4400P0TB0EE

Micron Technology

Micron Technology's PC48F4400P0TB0EE is a 32MX16 Flash Memory with 536Mbit density. Operating at 3V, it offers synchronous mode and 95ns access time. Ideal for industrial applications, this memory has a temperature range of -40 to 85°C and features parallel interface with 1mm terminal pitch.

95 ns

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

BOTTOM

R-PBGA-B64

e1

13 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

10 mm

PC48F4400P0TB0EH by Micron Technology

PC48F4400P0TB0EH

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3;

95 ns

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

BOTTOM

R-PBGA-B64

e1

13 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

RC28F256P33TFE by Micron Technology

RC28F256P33TFE

Micron Technology

Micron Technology's RC28F256P33TFE is a 16Mx16 NOR flash memory with 268MB density. Operating at 3V, it offers synchronous mode and industrial temperature grade. With 95ns access time, it suits applications requiring fast parallel data storage and retrieval.

95 ns

TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

TOP

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

RC48F4400P0TB0EJ by Micron Technology

RC48F4400P0TB0EJ

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Finish: TIN SILVER COPPER;

95 ns

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

BOTTOM

R-PBGA-B64

e1

13 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

AT45DCB002 by Atmel

AT45DCB002

Atmel

Atmel's AT45DCB002 is a 16Mx1 Flash Memory with 7 terminals, operating at 3V. It supports synchronous mode, has a clock frequency of 20MHz, and industrial temperature grade. Ideal for applications requiring high memory density and reliable data storage in microelectronic assemblies.

20 MHz

X-XXMA-X7

16777216 bit

FLASH CARD

1

1

7

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

UNSPECIFIED

UNSPECIFIED

MICROELECTRONIC ASSEMBLY

SERIAL

NOT SPECIFIED

2.7

Not Qualified

3.6 V

2.7 V

3

NO

CMOS

INDUSTRIAL

UNSPECIFIED

UNSPECIFIED

NOT SPECIFIED

M29F080D70N6 by STMicroelectronics

M29F080D70N6

STMicroelectronics

M29F080D70N6 from STMicroelectronics is a NOR flash memory with 1M x 8 organization, operating at 5V. It features a max access time of 70 ns and operates in temperatures from -40 °C to 85°C, making it ideal for industrial applications. Its compact SOIC package ensures efficient surface mounting.

70 ns

YES

YES

YES

R-PDSO-G40

e0

18.4 mm

8388608 bit

FLASH

8

1

16

40

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

10 mm

M29F800DB55N6 by STMicroelectronics

M29F800DB55N6

STMicroelectronics

M29F800DB55N6 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 55ns. It features a dual terminal design in a thin profile package, ideal for industrial applications. Operating b/w -40 °C to 85°C, it ensures reliability in harsh environments.

55 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DB70N6 by STMicroelectronics

M29F800DB70N6

STMicroelectronics

M29F800DB70N6 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 70ns. It features a dual terminal design in a thin profile package, ideal for industrial applications. Operating b/w -40 °C to 85°C, it ensures reliability in harsh environments.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DT55N6 by STMicroelectronics

M29F800DT55N6

STMicroelectronics

M29F800DT55N6 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 55ns. It features a dual terminal configuration in a thin SO package, suitable for industrial applications. Operating b/w -40 °C to 85°C, it ensures reliability in diverse environments.

55 ns

TOP BOOT BLOCK

8

TOP

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

AT29C040A-90JI by Atmel

AT29C040A-90JI

Atmel

Atmel's AT29C040A-90JI is a 512Kx8 NOR flash memory chip with 2K sectors, operating at 5V. It features asynchronous mode, 90ns access time, and supports parallel programming. Ideal for industrial applications requiring fast data polling and toggle bit functionality in a compact chip carrier package.

90 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e0

13.97 mm

4194304 bit

FLASH

8

2

1

2K

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

256

PARALLEL

225

5

5

Not Qualified

3.556 mm

256

.0003 Amp

Flash Memories

40 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

10 ms

M58LW032D110N6 by STMicroelectronics

M58LW032D110N6

STMicroelectronics

M58LW032D110N6 from STMicroelectronics is a 32Mbit NOR Flash memory with a 3V supply, featuring asynchronous operation and a max access time of 110 ns. It operates in extreme temperatures (-40 °C to 85 °C) and supports dual terminal positioning. Ideal for industrial applications requiring reliable data storage.

110 ns

8

YES

YES

NO

R-PDSO-G56

e0

18.4 mm

33554432 bit

FLASH

16

1

32

56

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

NOT SPECIFIED

3/3.3

3

Not Qualified

YES

1.2 mm

128K

.00004 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

14 mm

M58LW032D110ZA6 by STMicroelectronics

M58LW032D110ZA6

STMicroelectronics

M58LW032D110ZA6 from STMicroelectronics is a 32Mbit NOR Flash memory with a 3V nominal supply, featuring asynchronous operation and a max access time of 110 ns. It operates in industrial temperatures (-40 °C to 85 °C) and supports parallel interface. Ideal for embedded applications requiring reliable data storage.

110 ns

8

YES

YES

NO

R-PBGA-B64

e0

13 mm

33554432 bit

FLASH

16

1

32

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

128K

.00004 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

MT25QL02GCBA8E12-0SIT by Micron Technology

MT25QL02GCBA8E12-0SIT

Micron Technology

MT25QL02GCBA8E12-0SIT by Micron: NOR Flash Memory, 512Mx4 organization, 133MHz clock frequency. Ideal for industrial applications requiring high endurance and serial SPI interface.

MEMORY WIDTH CAN ALSO ORGANISED AS X1

2

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

4

1

24

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX4

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

3

Not Qualified

1.2 mm

SPI

.00005 Amp

Flash Memories

60 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

AT29C512-70JI by Atmel

AT29C512-70JI

Atmel

AT29C512-70JI by Atmel is a 64KX8 NOR flash memory chip with 512 sectors, operating at 5V. It has an endurance of 10k cycles and offers fast access time of 70ns. Ideal for industrial applications requiring reliable non-volatile memory storage in compact form factor.

70 ns

NO

YES

10000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

524288 bit

FLASH

8

2

1

512

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

128

PARALLEL

225

5

5

Not Qualified

3.556 mm

128

.0003 Amp

Flash Memories

50 mA

5.25 V

4.75 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

10 ms

AT49BV322AT-70TI by Atmel

AT49BV322AT-70TI

Atmel

Atmel's AT49BV322AT-70TI is a 2MX16 NOR flash memory with 8K,64K sector size. Operating at -40 to 85 °C, it has a programming voltage of 3V and max access time of 70ns. Ideal for industrial applications requiring fast data polling and common flash interface support.

70 ns

TOP/BOTTOM BOOT BLOCK

8

TOP

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

33554432 bit

FLASH

16

3

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

240

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.000025 Amp

Flash Memories

45 mA

3.6 V

2.65 V

2.7

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

GULL WING

.5 mm

DUAL

30

YES

NOR TYPE

12 mm

AT29C010A-70JI by Atmel

AT29C010A-70JI

Atmel

AT29C010A-70JI by Atmel is a 128KX8 NOR type flash memory with a max access time of 70 ns. It operates at a nominal voltage of 5V and has a package style of chip carrier. This memory IC is commonly used in industrial applications requiring high-speed data storage.

70 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e0

13.97 mm

1048576 bit

FLASH

8

2

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

5

5

Not Qualified

3.556 mm

8K,112K,8K

.00003 Amp

Flash Memories

50 mA

5.25 V

4.75 V

5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

J BEND

1.27 mm

QUAD

30

YES

NOR TYPE

11.43 mm

10 ms

AT29C010A-70PI by Atmel

AT29C010A-70PI

Atmel

AT29C010A-70PI by Atmel is a 128Kx8 NOR flash memory with 131072 words. It operates at 5V, has a max access time of 70ns, and supports asynchronous mode. Widely used in industrial applications for fast data storage and retrieval with parallel interface.

70 ns

BOTTOM/TOP

NO

YES

R-PDIP-T32

e0

42.037 mm

1048576 bit

FLASH

8

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

5

Not Qualified

4.826 mm

8K,112K,8K

.0003 Amp

Flash Memories

50 mA

5.25 V

4.75 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

NOR TYPE

15.24 mm

10 ms

AT29C010A-70TI by Atmel

AT29C010A-70TI

Atmel

Atmel's AT29C010A-70TI is a 128Kx8 NOR flash memory with 131,072 words. Operating at 5V, it offers fast access time of 70ns and toggle bit feature. Ideal for industrial applications, this CMOS technology-based memory has a compact form factor with gull wing terminals for easy integration in various devices.

70 ns

BOTTOM/TOP

NO

YES

R-PDSO-G32

e0

18.4 mm

1048576 bit

FLASH

8

3

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

240

5

5

Not Qualified

1.2 mm

8K,112K,8K

.00003 Amp

Flash Memories

50 mA

5.25 V

4.75 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

10 ms

M29F800DB70M6E by STMicroelectronics

M29F800DB70M6E

STMicroelectronics

STMicroelectronics M29F800DB70M6E is a 512Kx16 NOR flash memory with 85°C max temp, 70ns access time, and 5V programming voltage. Ideal for industrial applications requiring fast data access and reliable non-volatile storage in a compact small outline package.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PDSO-G44

e3/e4

28.2 mm

8388608 bit

FLASH

16

1

1,2,1,15

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

NOT SPECIFIED

5

5

Not Qualified

YES

2.8 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN/NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

13.3 mm

M29F800DB70N6E by STMicroelectronics

M29F800DB70N6E

STMicroelectronics

M29F800DB70N6E from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 70ns. It features a compact SOIC package, operates in -40 °C to 85°C range, and supports asynchronous mode for industrial applications. Ideal for embedded systems requiring reliable data storage.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e6

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN BISMUTH

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DT70M6E by STMicroelectronics

M29F800DT70M6E

STMicroelectronics

M29F800DT70M6E from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 70ns. It features a dual terminal design, operates in asynchronous mode, and supports industrial temperature ranges (-40 °C to 85°C). Ideal for embedded applications requiring reliable data storage.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

YES

R-PDSO-G44

e3/e4

28.2 mm

8388608 bit

FLASH

16

1

1,2,1,15

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

NOT SPECIFIED

5

5

Not Qualified

YES

2.8 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN/NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

13.3 mm

M29F800DT70N6E by STMicroelectronics

M29F800DT70N6E

STMicroelectronics

M29F800DT70N6E from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 70ns. It features a compact SOIC package, operates in -40 °C to 85°C range, and is ideal for industrial applications requiring reliable data storage.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

YES

R-PDSO-G48

e6

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN BISMUTH

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

AT49BV162A-70TI by Atmel

AT49BV162A-70TI

Atmel

Atmel's AT49BV162A-70TI is a 1MX16 NOR flash memory with 8K,64K sector size. Operating at 3V, it offers fast access time of 70ns and low standby current of 0.000025A. Ideal for industrial applications requiring reliable non-volatile memory with parallel interface.

70 ns

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

16777216 bit

FLASH

16

3

1

8,31

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.000025 Amp

Flash Memories

45 mA

3.6 V

2.65 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

AT49F002AT-55JI by Atmel

AT49F002AT-55JI

Atmel

AT49F002AT-55JI by Atmel is a 256Kx8 NOR flash memory chip with 262144 words, offering 10000 write/erase cycles. Operating at an industrial temperature grade of -40 to 85 °C, it supports asynchronous mode and has a max access time of 55 ns. Ideal for applications requiring fast data polling and reliable non-volatile memory storage.

55 ns

TOP

YES

YES

10000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

2097152 bit

FLASH

8

2

1

1,2,1,3

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

5

5

Not Qualified

3.556 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

25 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

MT28F128J3FS-12MET by Micron Technology

MT28F128J3FS-12MET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Qualification: Not Qualified;

120 ns

8

YES

YES

NO

R-PBGA-B64

e0

13 mm

134217728 bit

FLASH

16

1

128

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

MT28F128J3RG-12MET by Micron Technology

MT28F128J3RG-12MET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSOP1; Package Shape: RECTANGULAR; Alternate Memory Width: 8;

120 ns

8

YES

YES

NO

R-PDSO-G56

e0

18.4 mm

134217728 bit

FLASH

16

1

128

56

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSOP1

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4/8

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

MT28F320J3FS-11MET by Micron Technology

MT28F320J3FS-11MET

Micron Technology

Micron Technology's MT28F320J3FS-11MET is a 32Mb NOR flash memory with 2MX16 organization, operating at 3V. It features a fast access time of 110ns and industrial temperature grade suitability. Ideal for applications requiring high-speed data storage in industrial environments.

110 ns

8

YES

YES

NO

R-PBGA-B64

e0

13 mm

33554432 bit

FLASH

16

1

32

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

MT28F640J3FS-115MET by Micron Technology

MT28F640J3FS-115MET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE;

115 ns

8

YES

YES

NO

R-PBGA-B64

e0

13 mm

67108864 bit

FLASH

16

1

64

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

W25Q64BVSSIG by Winbond Electronics

W25Q64BVSSIG

Winbond Electronics

W25Q64BVSSIG by Winbond Electronics is a NOR flash memory with 8MX8 organization, SPI serial bus type, and 80 MHz clock frequency. It is ideal for industrial applications requiring high endurance of 100K write/erase cycles in a small outline package.

80 MHz

20

100000 Write/Erase Cycles

S-PDSO-G8

5.28 mm

67108864 bit

FLASH

8

1

8

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

3/3.3

2.7

Not Qualified

2.16 mm

SPI

.000005 Amp

Flash Memories

18 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

5.28 mm

HARDWARE/SOFTWARE

MT28F128J3BS-12ET by Micron Technology

MT28F128J3BS-12ET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

120 ns

8

YES

YES

NO

R-PBGA-B64

e1

13 mm

134217728 bit

FLASH

16

1

128

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

MT28F128J3BS-12MET by Micron Technology

MT28F128J3BS-12MET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

120 ns

8

YES

YES

NO

R-PBGA-B64

e1

13 mm

134217728 bit

FLASH

16

1

128

64

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NO

NOR TYPE

10 mm

MT28F128J3RP-12ET by Micron Technology

MT28F128J3RP-12ET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSOP1; Package Shape: RECTANGULAR; Type: NOR TYPE;

120 ns

8

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

16

1

128

56

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSOP1

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

MT28F128J3RP-12MET by Micron Technology

MT28F128J3RP-12MET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSOP1; Package Shape: RECTANGULAR; Memory Width: 16;

120 ns

8

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

16

1

128

56

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSOP1

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

MT28F320J3BS-11ET by Micron Technology

MT28F320J3BS-11ET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu);

110 ns

R-PBGA-B64

e1

13 mm

33554432 bit

FLASH

16

1

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

Not Qualified

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

10 mm

MT28F320J3BS-11MET by Micron Technology

MT28F320J3BS-11MET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

110 ns

R-PBGA-B64

e1

13 mm

33554432 bit

FLASH

16

1

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

Not Qualified

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT28F640J3BS-115ET by Micron Technology

MT28F640J3BS-115ET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

115 ns

R-PBGA-B64

e1

13 mm

67108864 bit

FLASH

16

1

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

Not Qualified

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

10 mm

MT28F640J3BS-115MET by Micron Technology

MT28F640J3BS-115MET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Programming Voltage (V): 2.7;

115 ns

R-PBGA-B64

e1

13 mm

67108864 bit

FLASH

16

1

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

Not Qualified

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT28F800B5WP-8BET by Micron Technology

MT28F800B5WP-8BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G48;

80 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G48

e3

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B5WP-8TET by Micron Technology

MT28F400B5WP-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Functions: 1;

80 ns

TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G48

e3

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

CAT28F512HI-90 by Catalyst Semiconductor

CAT28F512HI-90

Catalyst Semiconductor

CAT28F512HI-90 by Catalyst Semiconductor is a 64KX8 NOR type Flash Memory with 524288 bit density. Operating at 5V, it offers 100000 Write/Erase Cycles and has a max access time of 90ns. Ideal for industrial applications requiring reliable non-volatile memory solutions.

90 ns

YES

NO

100000 Write/Erase Cycles

R-PDSO-G32

e3

18.4 mm

524288 bit

FLASH

8

2A

1

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

12

Not Qualified

1.2 mm

.00001 Amp

Flash Memories

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

8 mm

CAT28F512LI-12 by Catalyst Semiconductor

CAT28F512LI-12

Catalyst Semiconductor

CAT28F512LI-12 by Catalyst Semiconductor is a 64KX8 NOR type Flash Memory with 524288 bit memory density. Operating at 5V, it offers 100000 Write/Erase Cycles endurance and has a max access time of 120 ns. Ideal for industrial applications requiring high-speed parallel memory solutions.

120 ns

YES

NO

100000 Write/Erase Cycles

R-PDIP-T32

e3

42.03 mm

524288 bit

FLASH

8

1

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

12

Not Qualified

5.08 mm

.00001 Amp

Flash Memories

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

NO

NOR TYPE

15.24 mm

AT45DB041B-SU by Atmel

AT45DB041B-SU

Atmel

Atmel's AT45DB041B-SU is a 4Mx1 NOR flash memory with SPI serial bus, operating at 20MHz. It has a supply voltage range of 2.7V to 3.6V and offers hardware write protection. Ideal for industrial applications requiring reliable non-volatile memory storage in compact designs.

ORGANIZED AS 2048 PAGES OF 264 BYTES EACH

20 MHz

R-PDSO-G8

e3

5.29 mm

4194304 bit

FLASH

1

1

1

8

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX1

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/3.3

2.7

Not Qualified

2.16 mm

SPI

.00001 Amp

Flash Memories

10 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

40

NOR TYPE

5.24 mm

HARDWARE