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MT25QL02GCBA8E12-0SIT

Micron Technology

MT25QL02GCBA8E12-0SIT by Micron Technology

MT25QL02GCBA8E12-0SIT by Micron: NOR Flash Memory, 512Mx4 organization, 133MHz clock frequency. Ideal for industrial applications requiring high endurance and serial SPI interface.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 20,200 parts In-Stock

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Vyrian

USA . 6,649 parts In-Stock

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Digiode

USA . 1,418 parts In-Stock

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Nova Conductors

Japan . 200 parts In-Stock

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AZTECH Wire

Italy . 573 parts In-Stock

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$11.446

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Ampacity Inc.

Singapore . 884 parts In-Stock

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$28.000

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Continental Prestige Electronics

USA . 5,884 parts In-Stock

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Argo Parts USA

USA . 2,959 parts In-Stock

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Corphita

USA . 2,207 parts In-Stock

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Microchip USA

USA . 399 parts In-Stock

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Futuretech Components

Singapore . 268 parts In-Stock

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Bastille Electronics

Australia . 40 parts In-Stock

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Perfect Parts

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Overview

Unlock the power of reliable and high-quality Flash Memory with the MT25QL02GCBA8E12-0SIT by Micron Technology. Designed with cutting-edge technology and a commitment to excellence, this memory device offers unmatched performance and durability for a wide range of applications. Whether you're looking to enhance the speed and efficiency of your system or improve data storage capabilities, this product delivers exceptional value and benefits. Trust Micron Technology to provide top-of-the-line solutions that exceed expectations and drive success in your projects.

Feature Benefit Bullets

Package Body Material - PLASTIC/EPOXY

The plastic/epoxy material makes the flash memory package lightweight and durable, making it easy to handle and resistant to damage during handling or installation.

Operating Mode - SYNCHRONOUS

The synchronous operating mode allows for faster and more efficient data transfer, improving overall performance of the flash memory.

Maximum Operating Temperature - 85 °C

With a maximum operating temperature of 85°C, this flash memory can withstand higher temperature environments, making it suitable for industrial use.

Write Protection - HARDWARE/SOFTWARE

The hardware/software write protection feature ensures that critical data stored in the flash memory is secure and cannot be accidentally overwritten or modified.

Endurance - 100000 Write/Erase Cycles

With a high endurance of 100,000 write/erase cycles, this flash memory can withstand frequent data read/write operations without compromising its reliability or lifespan.

Technical Specifications

Flash Memory MT25QL02GCBA8E12-0SIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Additional Features:

MEMORY WIDTH CAN ALSO ORGANISED AS X1

Alternate Memory Width:

2

Maximum Clock Frequency (fCLK):

133 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PBGA-B24

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

2147483648 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

24

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX4

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA24,5X5,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Type:

NOR TYPE

Width:

6 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

MT25QL02GCBA8E12-0SIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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