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CAT28F512LI-12

Catalyst Semiconductor

CAT28F512LI-12 by Catalyst Semiconductor

CAT28F512LI-12 by Catalyst Semiconductor is a 64KX8 NOR type Flash Memory with 524288 bit memory density. Operating at 5V, it offers 100000 Write/Erase Cycles endurance and has a max access time of 120 ns. Ideal for industrial applications requiring high-speed parallel memory solutions.

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Digiode

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Nova Conductors

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Singapore . 1,248 parts In-Stock

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AZTECH Wire

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Problanco Electronics

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SupplyDigital Components

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Microchip USA

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Overview

Unlock the power of reliable and efficient data storage with the CAT28F512LI-12 by Catalyst Semiconductor. As a leader in flash memory technology, Catalyst Semiconductor delivers top-quality products that are perfect for a wide range of applications. Whether you need high-speed access, low power consumption, or industrial-grade durability, this flash memory device has got you covered. Say goodbye to data loss worries and hello to seamless performance with the CAT28F512LI-12. Trust Catalyst Semiconductor to provide you with the value, benefits, and advantages you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, ensuring reliability and ease of handling.

Operating Mode: ASYNCHRONOUS

Allows for independent, non-overlapping operations, enhancing speed and efficiency.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage requirement, compatible with most systems.

Maximum Operating Temperature: 85 °C

Suitable for use in various environments without risk of overheating.

Organization: 64KX8

Organized in a convenient 64KX8 configuration, optimal for data storage and retrieval.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high-speed operation.

Endurance: 100000 Write/Erase Cycles

High endurance rating ensures longevity and reliability for repeated data read/write operations.

Technical Specifications

Flash Memory CAT28F512LI-12 attributes and parameters. Explore more Flash Memory devices from Catalyst Semiconductor

Specs

Maximum Access Time:

120 ns

Command User Interface:

YES

Data Polling:

NO

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDIP-T32

JESD-609 Code:

e3

Length:

42.03 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Toggle Bit:

NO

Type:

NOR TYPE

Width:

15.24 mm

Trade Compliance

CAT28F512LI-12 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

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