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CAT28F512HI90

Onsemi

CAT28F512HI90 by Onsemi

CAT28F512HI90 by Onsemi is a 64KX8 NOR Flash Memory with 524288 bit memory density. It operates at 5V, has 100000 Write/Erase Cycles endurance, and offers a max access time of 90ns. Ideal for industrial applications requiring high-speed data storage in compact devices.

Median Price

$4.970

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 780 parts In-Stock

1+ parts

-

100+ parts

$4.280

1k+ parts

$3.830

10k+ parts

$3.610

780

-

$4.280

$3.830

$3.610

DigiKey

USA . 780 parts In-Stock

1+ parts

-

100+ parts

$4.970

1k+ parts

-

10k+ parts

-

780

-

$4.970

-

-

Verical

USA . 780 parts In-Stock

1+ parts

-

100+ parts

$5.350

1k+ parts

$4.787

10k+ parts

$4.513

780

-

$5.350

$4.787

$4.513

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 60 parts In-Stock

1+ parts

$4.383

100+ parts

-

1k+ parts

-

10k+ parts

-

60

$4.383

-

-

-

Digiode

USA . 2,203 parts In-Stock

1+ parts

$4.541

100+ parts

-

1k+ parts

-

10k+ parts

-

2,203

$4.541

-

-

-

Vyrian

USA . 13,101 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,101

-

-

-

-

DigiKey Marketplace

USA . 988 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

988

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,510 parts In-Stock

1+ parts

$4.060

100+ parts

-

1k+ parts

-

10k+ parts

-

1,510

$4.060

-

-

-

Corphita

USA . 654 parts In-Stock

1+ parts

$4.302

100+ parts

-

1k+ parts

-

10k+ parts

-

654

$4.302

-

-

-

Netroflash

USA . 2,100 parts In-Stock

1+ parts

$4.383

100+ parts

-

1k+ parts

$4.164

10k+ parts

$4.076

2,100

$4.383

-

$4.164

$4.076

Corohmni

South Africa . 431 parts In-Stock

1+ parts

$4.780

100+ parts

-

1k+ parts

-

10k+ parts

-

431

$4.780

-

-

-

Microchip USA

USA . 313 parts In-Stock

1+ parts

$32.310

100+ parts

$32.110

1k+ parts

$32.010

10k+ parts

$31.910

313

$32.310

$32.110

$32.010

$31.910

TANS Electronics

Latvia . 6,761 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,761

-

-

-

-

Problanco Electronics

Mexico . 2,006 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,006

-

-

-

-

UHIMA Technologies

Türkiye . 703 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

703

-

-

-

-

Kulean Microsystems

USA . 417 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

417

-

-

-

-

SupplyDigital Components

Austria . 288 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

288

-

-

-

-

Overview

Experience the superior quality and reliability of Onsemi's CAT28F512HI90 Flash Memory. This versatile product is perfect for a wide range of applications, offering high performance and durability in a compact package. With 100,000 write/erase cycles and industrial-grade temperature resilience, this memory chip provides exceptional value and peace of mind to customers seeking top-notch technology solutions. Upgrade your devices with Onsemi's cutting-edge Flash Memory today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the product.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards.

Operating Mode: ASYNCHRONOUS

Enables independent operation without the need for synchronization with external devices.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage supply for compatibility with various systems.

No. of Terminals: 32

Sufficient terminals for connecting to other components and devices.

Maximum Operating Temperature: 85 °C

Capable of functioning in high temperature environments without performance degradation.

Memory IC Type: FLASH

Flash memory offers fast read/write operations and non-volatile storage, making it ideal for data storage applications.

Technical Specifications

Flash Memory CAT28F512HI90 attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Access Time:

90 ns

Command User Interface:

YES

Data Polling:

NO

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

2A

No. of Functions:

1

No. of Terminals:

32

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP32,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

NO

Type:

NOR TYPE

Width:

8 mm

Trade Compliance

CAT28F512HI90 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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