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CAT28F512G-90

Catalyst Semiconductor

CAT28F512G-90 by Catalyst Semiconductor

CAT28F512G-90 by Catalyst Semiconductor is a 64KX8 NOR Flash Memory with 524288 bit density. Operating at 5V, it offers 100000 Write/Erase Cycles and has a max access time of 90 ns. Ideal for applications requiring high-speed parallel memory with endurance and reliability.

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1k+

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Vyrian

USA . 1,232 parts In-Stock

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Nova Conductors

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AZTECH Wire

Italy . 933 parts In-Stock

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Ampacity Inc.

Singapore . 332 parts In-Stock

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TANS Electronics

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Problanco Electronics

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SupplyDigital Components

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Microchip USA

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Corohmni

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Kulean Microsystems

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UHIMA Technologies

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Bastille Electronics

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Overview

Experience the superior quality and reliability of Catalyst Semiconductor with the CAT28F512G-90 Flash Memory. Ideal for a wide range of applications, this product offers unmatched performance and durability. Benefit from its high-end technology and commercial-grade temperature grade, providing you with peace of mind and efficiency in your projects. Trust Catalyst Semiconductor to deliver cutting-edge solutions that meet your needs and exceed your expectations. Elevate your work with the CAT28F512G-90 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the flash memory chip, making it suitable for various environmental conditions.

Nominal Supply Voltage / Vsup (V): 5

Operating at a voltage of 5V ensures stable performance and reliable operation.

Memory Density: 524288 bit

With a high memory density, this flash memory chip can store a large amount of data efficiently.

Endurance: 100000 Write/Erase Cycles

The high endurance level of this flash memory chip allows for frequent write and erase operations without degrading performance.

Maximum Access Time: 90 ns

The fast access time of 90 ns ensures quick data retrieval and efficient operation of the flash memory chip.

Technical Specifications

Flash Memory CAT28F512G-90 attributes and parameters. Explore more Flash Memory devices from Catalyst Semiconductor

Specs

Maximum Access Time:

90 ns

Command User Interface:

YES

Data Polling:

NO

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

32

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

3.55 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

NO

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

CAT28F512G-90 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

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