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CAT28F512P-90

Onsemi

CAT28F512P-90 by Onsemi

CAT28F512P-90 by Onsemi is a 64KX8 NOR flash memory with 524288 bit density. Operating at 5V, it offers 100000 Write/Erase Cycles and has a max access time of 90ns. Ideal for applications requiring fast, reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,222 parts In-Stock

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Vyrian

USA . 1,121 parts In-Stock

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Nova Conductors

Japan . 54 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 739 parts In-Stock

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$16.296

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739

$16.296

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TANS Electronics

Latvia . 6,589 parts In-Stock

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Problanco Electronics

Mexico . 6,033 parts In-Stock

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SupplyDigital Components

Austria . 5,089 parts In-Stock

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Corphita

USA . 2,148 parts In-Stock

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Kulean Microsystems

USA . 1,226 parts In-Stock

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UHIMA Technologies

Türkiye . 552 parts In-Stock

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Corohmni

South Africa . 429 parts In-Stock

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Bastille Electronics

Australia . 81 parts In-Stock

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Overview

Experience lightning-fast data storage and retrieval with the CAT28F512P-90 Flash Memory by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-quality products with exceptional durability and reliability. This versatile flash memory device is perfect for a wide range of applications, offering seamless integration and high performance. Say goodbye to slow loading times and hello to efficiency with the CAT28F512P-90, providing customers with the value, benefits, and advantages they need for optimal data management. Elevate your technology experience today with this cutting-edge flash memory solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the product lightweight and durable, ideal for portable devices.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into various electronics applications.

Operating Mode: ASYNCHRONOUS

This mode ensures fast and efficient data retrieval, enhancing overall performance.

Nominal Supply Voltage / Vsup: 5V

The 5V supply voltage is a standard requirement for many devices, making this product versatile.

Power Supplies: 5V

With multiple power supplies, the product is stable and reliable in different operating conditions.

No. of Terminals: 32

The high number of terminals allows for flexibility in connection options.

Package Style (Meter): IN-LINE

The in-line package style is compact and space-saving, perfect for small electronic designs.

Maximum Operating Temperature: 70 °C

The high operating temperature range ensures the product can withstand harsh environments.

Organization: 64KX8

The 64KX8 organization provides ample storage capacity for data storage needs.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature ensures the product can function in various climate conditions.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides excellent conductivity and solderability.

Terminal Position: DUAL

Dual terminal position offers redundancy and reliability in connection.

Maximum Seated Height: 5.08 mm

The low seated height allows for compact integration in tight spaces.

Width: 15.24 mm

The slim width of the product enables easy installation in electronic circuits.

Minimum Supply Voltage (Vsup): 4.5V

The low minimum supply voltage ensures energy efficiency and versatility in power sources.

Technical Specifications

Flash Memory CAT28F512P-90 attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Access Time:

90 ns

Command User Interface:

YES

Data Polling:

NO

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDIP-T32

JESD-609 Code:

e0

Length:

42.03 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Toggle Bit:

NO

Type:

NOR TYPE

Width:

15.24 mm

Trade Compliance

CAT28F512P-90 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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