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CAT28F512LI12

Onsemi

CAT28F512LI12 by Onsemi

CAT28F512LI12 by Onsemi is a 64KX8 NOR type flash memory with a supply voltage of 4.5-5.5V. It has an industrial temperature grade and can endure 100,000 write/erase cycles. This memory IC is commonly used in applications requiring high-density storage and fast access times.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,857 parts In-Stock

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Vyrian

USA . 759 parts In-Stock

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Nova Conductors

Japan . 715 parts In-Stock

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Prism Electronics

USA . 4 parts In-Stock

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Ampacity Inc.

Singapore . 1,248 parts In-Stock

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$4.000

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$4.000

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AZTECH Wire

Italy . 1,493 parts In-Stock

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$10.022

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Problanco Electronics

Mexico . 7,273 parts In-Stock

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TANS Electronics

Latvia . 4,577 parts In-Stock

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SupplyDigital Components

Austria . 3,398 parts In-Stock

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Corphita

USA . 1,081 parts In-Stock

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UHIMA Technologies

Türkiye . 589 parts In-Stock

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Microchip USA

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Corohmni

South Africa . 390 parts In-Stock

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Bastille Electronics

Australia . 164 parts In-Stock

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Kulean Microsystems

USA . 37 parts In-Stock

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Overview

Discover the CAT28F512LI12 by Onsemi, a high-quality flash memory that offers unparalleled performance and reliability. As a leading manufacturer in the industry, Onsemi ensures that this product delivers exceptional value to customers. With its wide range of applications, including data storage, embedded systems, and consumer electronics, this flash memory is versatile and adaptable to various needs. Experience the benefits of its advanced technology, such as fast access times and high endurance with 100,000 write/erase cycles. Trust Onsemi to provide you with a reliable solution that exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product is made with durable and lightweight plastic/epoxy material, ensuring its durability and portability for easy handling and transportation.

No. of Functions: 1

With a single function, this flash memory simplifies usage and eliminates any complexity, making it user-friendly and efficient.

Package Shape: RECTANGULAR

The rectangular package shape of this flash memory allows for easy integration into various devices and systems, ensuring compatibility and versatility.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode of this flash memory enables rapid data transfer, reducing latency and enhancing performance.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures stable and reliable power supply, minimizing the risk of disruptions and facilitating consistent performance.

Power Supplies (V): 5

With a power supply of 5V, this flash memory guarantees sufficient energy to meet the demands of data storage and retrieval, ensuring optimal functionality.

No. of Terminals: 32

The 32 terminals of this flash memory facilitate easy connectivity and enable seamless integration into compatible devices, enhancing usability and compatibility.

Package Style (Meter): IN-LINE

The in-line package style allows for efficient utilization of space, making this flash memory suitable for applications where compactness is essential.

Maximum Operating Temperature: 85 °C

The ability to operate at a maximum temperature of 85°C ensures the reliability and durability of this flash memory even in harsh environments.

Organization: 64KX8

With an organizational structure of 64KX8, this flash memory provides ample storage capacity for data, accommodating a large volume of information efficiently.

Minimum Operating Temperature: -40 °C

The ability to operate at a minimum temperature of -40°C makes this flash memory suitable for use in extreme environments or climatic conditions.

Terminal Finish: TIN

The terminal finish of TIN enhances the overall reliability and longevity of this flash memory, ensuring excellent connectivity and corrosion resistance.

Terminal Position: DUAL

The dual terminal position offers flexibility in terms of device placement and installation, enabling seamless integration and ease of use.

Maximum Seated Height: 5.08 mm

With a maximum seated height of 5.08 mm, this flash memory can be easily accommodated in devices with limited vertical space, providing versatility and adaptability.

Width: 15.24 mm

The compact width of 15.24 mm allows for easy installation and integration into various devices and systems, ensuring efficient space utilization.

Minimum Supply Voltage (Vsup): 4.5 V

The minimum supply voltage requirement of 4.5V ensures stable and reliable operation, ensuring consistent performance and preventing potential disruptions.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C allows for seamless soldering and assembly processes, ensuring secure and robust connections.

Type: NOR TYPE

Being a NOR type flash memory, this product offers fast read times and random access, making it suitable for applications requiring high-speed data transfer and execution.

Length: 42.03 mm

With a length of 42.03 mm, this flash memory can be easily integrated into various devices, offering convenience and flexibility in design and installation.

Programming Voltage (V): 12

The programming voltage of 12V provides the necessary power to program data into the flash memory, enabling efficient and accurate data storage.

Temperature Grade: INDUSTRIAL

Designed for industrial environments, this flash memory operates reliably and efficiently in demanding conditions, offering durability and resilience.

Technology: CMOS

Built using CMOS technology, this flash memory consumes low power while delivering high performance, making it energy-efficient and suitable for portable devices.

Parallel or Serial: PARALLEL

With a parallel interface, this flash memory allows for simultaneous data transfer, ensuring rapid and efficient storage and retrieval operations.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides a secure and reliable connection, making this flash memory ideal for applications requiring robust connectivity.

Maximum Supply Current: 30 mA

With a maximum supply current of 30mA, this flash memory consumes low power during operation, optimizing energy usage and extending battery life.

No. of Words: 65536 words

This flash memory has a generous capacity of 65536 words, accommodating a large volume of data, making it suitable for storing vast amounts of information.

Memory Width: 8

With a memory width of 8 bits, this flash memory allows for precise and efficient data storage and retrieval, ensuring accuracy and reliability in operations.

Terminal Pitch: 2.54 mm

The terminal pitch of 2.54 mm facilitates easy and secure connection, enabling quick integration with other devices or circuit boards.

No. of Words Code: 64K

With a code for 64K words, this flash memory provides efficient addressing and access to stored data, promoting streamlined data management and retrieval processes.

Command User Interface: YES

Equipped with a command user interface, this flash memory offers enhanced control and management, enabling customization and optimization of operations.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage of 5.5V ensures compatibility with a wide range of power sources, providing flexibility and convenience in various applications.

Endurance: 100000 Write/Erase Cycles

With a high endurance rating of 100,000 write/erase cycles, this flash memory guarantees long-lasting and reliable data storage, ensuring data integrity and durability.

Memory Density: 524288 bit

With a memory density of 524,288 bits, this flash memory offers ample capacity for data storage, accommodating large files or multiple data sets efficiently.

Memory IC Type: FLASH

Being a flash memory IC type, this product offers non-volatile data storage, allowing for reliable information retention even when power is disconnected.

Maximum Standby Current: 0.00001 Amp

With an extremely low maximum standby current of 0.00001 Amp, this flash memory minimizes power consumption during idle periods, maximizing energy efficiency and preserving battery life.

Maximum Access Time: 120 ns

With a maximum access time of 120 nanoseconds, this flash memory enables quick and efficient retrieval of stored data, ensuring faster data processing and execution.

Technical Specifications

Flash Memory CAT28F512LI12 attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Access Time:

120 ns

Command User Interface:

YES

Data Polling:

NO

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDIP-T32

JESD-609 Code:

e3

Length:

42.03 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Toggle Bit:

NO

Type:

NOR TYPE

Width:

15.24 mm

Trade Compliance

CAT28F512LI12 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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