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CAT28F512GI-90T

Onsemi

CAT28F512GI-90T by Onsemi

CAT28F512GI-90T by Onsemi is a 64KX8 NOR type flash memory with a supply voltage of 5V. It operates asynchronously and has an endurance of 100,000 write/erase cycles. It is commonly used in industrial applications requiring high-density memory with fast access times.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 827 parts In-Stock

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Digiode

USA . 371 parts In-Stock

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Nova Conductors

Japan . 16 parts In-Stock

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AZTECH Wire

Italy . 827 parts In-Stock

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$13.884

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$13.884

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Ampacity Inc.

Singapore . 721 parts In-Stock

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$15.000

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Problanco Electronics

Mexico . 7,631 parts In-Stock

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TANS Electronics

Latvia . 5,782 parts In-Stock

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SupplyDigital Components

Austria . 4,924 parts In-Stock

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Microchip USA

USA . 4,165 parts In-Stock

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Kulean Microsystems

USA . 3,138 parts In-Stock

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Corphita

USA . 1,674 parts In-Stock

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Bastille Electronics

Australia . 800 parts In-Stock

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UHIMA Technologies

Türkiye . 638 parts In-Stock

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Corohmni

South Africa . 328 parts In-Stock

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Overview

Experience the exceptional quality and performance of the CAT28F512GI-90T Flash Memory by Onsemi. As a trusted manufacturer in the industry, Onsemi ensures top-notch reliability and durability in all their products. With its versatile applications, this Flash Memory is perfect for various electronic devices. Unlock the value of seamless data storage and fast access with the CAT28F512GI-90T. Say goodbye to slow loading times and hello to efficient data processing. Trust in the advantages that this product offers, including high endurance, low power consumption, and easy installation. Upgrade your devices today and witness the benefits for yourself.

Feature Benefit Bullets

Fast Access Time

With a maximum access time of 90 ns, our flash memory allows for quick retrieval and storage of data. This means that customers can enjoy fast and efficient operation, saving them valuable time.

High Memory Density

Our flash memory has a memory density of 524288 bits, providing customers with ample storage space for their data. Whether they need to store documents, photos, or music, our product ensures that they have enough room to keep all their important files in one place.

Long Endurance

With an endurance rating of 100,000 write/erase cycles, our flash memory is built to last. Customers can rely on its durability, knowing that it can handle frequent and extensive usage without compromising performance. This longevity contributes to the overall value of the product as it reduces the need for frequent replacements.

Low Standby Current

Our flash memory has a maximum standby current of 0.00001 Amp, ensuring minimal power consumption when not in use. This feature benefits customers by extending the battery life of electronic devices that rely on our flash memory, such as smartphones or portable media players. They can enjoy longer usage times between charges, enhancing their overall experience.

Wide Operating Temperature Range

Our flash memory can withstand extreme temperatures, with a minimum operating temperature of -40°C and a maximum operating temperature of 85°C. This makes it suitable for use in various environments, including industrial settings where temperature fluctuations may occur. Customers can rely on our product to perform reliably regardless of the conditions, adding to its overall value.

Easy Command User Interface

Our flash memory features a user-friendly command interface, making it simple and straightforward for customers to interact with the device. This ease of use eliminates any confusion or frustration and allows customers to effortlessly navigate and manage their data.

Robust Packaging Material

Our flash memory is enclosed in a plastic/epoxy package body, providing excellent protection against external elements. This ensures that the product remains safe and secure, even in rugged or demanding environments. The robust packaging material contributes to the overall value of the product by increasing its durability and longevity.

Small Package Size

Measuring only 13.97mm in length, 11.43mm in width, and with a maximum seated height of 3.55mm, our flash memory boasts a compact package size. This makes it ideal for space-constrained devices, such as slim laptops or portable gadgets. Customers can benefit from our product's small form factor without sacrificing storage capacity.

Reliable Power Supply

Our flash memory operates on a nominal supply voltage of 5V, ensuring a stable and consistent power source. This reliable power supply contributes to the overall performance and reliability of the product, preventing data loss or corruption due to fluctuating voltages.

Parallel Interface

Our flash memory utilizes a parallel interface, allowing for faster data transfer compared to a serial interface. This means that customers can enjoy quicker file transfers, reducing wait times and improving overall efficiency.

Technical Specifications

Flash Memory CAT28F512GI-90T attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Access Time:

90 ns

Command User Interface:

YES

Data Polling:

NO

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

32

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

3.55 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

NO

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

CAT28F512GI-90T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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