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CAT28F512L-12

Catalyst Semiconductor

CAT28F512L-12 by Catalyst Semiconductor

CAT28F512L-12 by Catalyst Semiconductor is a 64Kx8 NOR Flash Memory with 100000 Write/Erase Cycles. Operating at 5V, it offers a max access time of 120ns and supports asynchronous mode. Ideal for applications requiring high endurance and fast data access in commercial temperature environments.

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Vyrian

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Nova Conductors

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Ampacity Inc.

Singapore . 1,415 parts In-Stock

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AZTECH Wire

Italy . 1,430 parts In-Stock

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SupplyDigital Components

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TANS Electronics

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Corphita

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UHIMA Technologies

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Corohmni

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Problanco Electronics

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Microchip USA

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Kulean Microsystems

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Overview

Experience the superior quality and reliability of Catalyst Semiconductor's CAT28F512L-12 Flash Memory. This versatile memory solution offers unmatched value with its 100,000 write/erase cycles endurance and fast access time of 120ns. Ideal for a wide range of applications, the CAT28F512L-12 provides customers with high-performance storage capabilities in a compact package. Trust Catalyst Semiconductor to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the flash memory, ensuring long-lasting performance.

Operating Mode: ASYNCHRONOUS

Enables efficient and independent operation of the flash memory, optimizing data transfer speeds.

Nominal Supply Voltage / Vsup (V): 5

Stable and reliable voltage supply for consistent performance and data retention.

Organization: 64KX8

Efficient organization of memory cells for storing data in a structured and accessible manner.

Technology: CMOS

Low power consumption and high integration capability, making the flash memory energy-efficient and versatile.

Endurance: 100000 Write/Erase Cycles

Longer lifespan and durability with high endurance for multiple write and erase cycles.

Technical Specifications

Flash Memory CAT28F512L-12 attributes and parameters. Explore more Flash Memory devices from Catalyst Semiconductor

Specs

Maximum Access Time:

120 ns

Command User Interface:

YES

Data Polling:

NO

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDIP-T32

JESD-609 Code:

e3

Length:

42.03 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Toggle Bit:

NO

Type:

NOR TYPE

Width:

15.24 mm

Trade Compliance

CAT28F512L-12 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

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