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CAT28F512L12

Onsemi

CAT28F512L12 by Onsemi

CAT28F512L12 by Onsemi is a 64Kx8 NOR flash memory with 524288-bit density. It operates at 5V, has a programming voltage of 12V, and offers 100000 write/erase cycles endurance. Ideal for applications requiring fast access times and high reliability in commercial temperature grades.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,525 parts In-Stock

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7,525

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Digiode

USA . 2,253 parts In-Stock

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2,253

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Nova Conductors

Japan . 550 parts In-Stock

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550

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,415 parts In-Stock

1+ parts

$10.000

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1,415

$10.000

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AZTECH Wire

Italy . 1,430 parts In-Stock

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$14.212

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1,430

$14.212

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SupplyDigital Components

Austria . 6,979 parts In-Stock

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6,979

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TANS Electronics

Latvia . 2,653 parts In-Stock

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2,653

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Corphita

USA . 2,449 parts In-Stock

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2,449

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UHIMA Technologies

Türkiye . 648 parts In-Stock

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648

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Corohmni

South Africa . 426 parts In-Stock

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426

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Problanco Electronics

Mexico . 178 parts In-Stock

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Bastille Electronics

Australia . 112 parts In-Stock

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Microchip USA

USA . 109 parts In-Stock

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Kulean Microsystems

USA . 105 parts In-Stock

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Overview

Elevate your tech game with the Onsemi CAT28F512L12 Flash Memory. Designed by a trusted manufacturer, this product offers top-notch quality and reliability. Ideal for a variety of applications, this flash memory provides seamless performance and fast access times. With a high endurance of 100,000 Write/Erase cycles, you can trust that your data is safe and secure. Upgrade your devices today with the Onsemi CAT28F512L12 and experience the value and benefits this innovative product has to offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the flash memory, ensuring it can withstand various environmental conditions.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent control of input and output operations, offering flexibility and efficiency in data transfer.

Nominal Supply Voltage (Vsup): 5V

Operating at a standard voltage level of 5V makes this flash memory compatible with a wide range of devices and power sources.

No. of Terminals: 32

Having 32 terminals provides sufficient connectivity options for transferring data and interacting with other components in a system.

Maximum Operating Temperature: 70°C

The flash memory can function reliably at high temperatures up to 70°C, making it suitable for industrial and commercial applications.

Memory IC Type: FLASH

Being a flash memory IC type ensures fast read and write speeds, low power consumption, and high reliability for data storage and retrieval.

Technical Specifications

Flash Memory CAT28F512L12 attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Access Time:

120 ns

Command User Interface:

YES

Data Polling:

NO

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDIP-T32

JESD-609 Code:

e3

Length:

42.03 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Toggle Bit:

NO

Type:

NOR TYPE

Width:

15.24 mm

Trade Compliance

CAT28F512L12 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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