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CAT28F512GI90

Onsemi

CAT28F512GI90 by Onsemi

CAT28F512GI90 by Onsemi is a 64KX8 NOR Flash Memory with 524288 bit density. It operates at 5V, has 100000 Write/Erase Cycles endurance, and offers 90ns access time. Ideal for industrial applications requiring high-speed parallel memory solutions.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,181 parts In-Stock

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Vyrian

USA . 874 parts In-Stock

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Nova Conductors

Japan . 176 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 679 parts In-Stock

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$13.910

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679

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Ampacity Inc.

Singapore . 1,162 parts In-Stock

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$27.000

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QUARKTWIN TECHNOLOGY LTD

USA . 14,804 parts In-Stock

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Kulean Microsystems

USA . 7,230 parts In-Stock

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Microchip USA

USA . 4,795 parts In-Stock

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TANS Electronics

Latvia . 4,321 parts In-Stock

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SupplyDigital Components

Austria . 3,926 parts In-Stock

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Problanco Electronics

Mexico . 3,471 parts In-Stock

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UHIMA Technologies

Türkiye . 692 parts In-Stock

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Corphita

USA . 559 parts In-Stock

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Corohmni

South Africa . 201 parts In-Stock

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Bastille Electronics

Australia . 153 parts In-Stock

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Overview

Upgrade your electronic devices with the reliable CAT28F512GI90 Flash Memory by Onsemi. With a focus on quality and innovation, Onsemi delivers cutting-edge technology that enhances performance and functionality. Ideal for a wide range of applications, this product offers customers value through its durability, efficiency, and seamless user experience. Trust Onsemi to provide you with the memory solution you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components of the flash memory, ensuring longevity and reliability.

Surface Mount: YES

Allows for easy integration onto circuit boards, saving space and simplifying the overall design.

Operating Mode: ASYNCHRONOUS

Enables independent access to memory locations without the need for synchronization, improving performance and flexibility.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage requirement makes it compatible with a wide range of systems and power sources.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing efficiency and reliability.

Endurance: 100000 Write/Erase Cycles

High endurance ensures that the flash memory can withstand frequent read/write operations, making it suitable for intensive data storage applications.

Technical Specifications

Flash Memory CAT28F512GI90 attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Access Time:

90 ns

Command User Interface:

YES

Data Polling:

NO

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

32

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

3.55 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

NO

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

CAT28F512GI90 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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