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CAT28F512H12

Onsemi

CAT28F512H12 by Onsemi

CAT28F512H12 by Onsemi is a 64Kx8 NOR flash memory with 100,000 write/erase cycles. Operating at 5V, it offers a max access time of 120ns and supports asynchronous mode. Ideal for commercial applications requiring high-speed parallel memory with 524288-bit density.

Median Price

$1.890

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1 parts In-Stock

1+ parts

-

100+ parts

$1.890

1k+ parts

$1.690

10k+ parts

$1.590

1

-

$1.890

$1.690

$1.590

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 645 parts In-Stock

1+ parts

$1.870

100+ parts

-

1k+ parts

-

10k+ parts

-

645

$1.870

-

-

-

Digiode

USA . 201 parts In-Stock

1+ parts

$1.986

100+ parts

-

1k+ parts

-

10k+ parts

-

201

$1.986

-

-

-

Vyrian

USA . 3,168 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,168

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1 parts In-Stock

1+ parts

$1.780

100+ parts

-

1k+ parts

-

10k+ parts

-

1

$1.780

-

-

-

Corphita

USA . 2,120 parts In-Stock

1+ parts

$1.881

100+ parts

-

1k+ parts

-

10k+ parts

-

2,120

$1.881

-

-

-

Corohmni

South Africa . 122 parts In-Stock

1+ parts

$2.090

100+ parts

-

1k+ parts

-

10k+ parts

-

122

$2.090

-

-

-

AZTECH Wire

Italy . 1,177 parts In-Stock

1+ parts

$11.076

100+ parts

-

1k+ parts

-

10k+ parts

-

1,177

$11.076

-

-

-

TANS Electronics

Latvia . 6,293 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,293

-

-

-

-

Problanco Electronics

Mexico . 5,604 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,604

-

-

-

-

SupplyDigital Components

Austria . 5,269 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,269

-

-

-

-

Kulean Microsystems

USA . 2,640 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,640

-

-

-

-

Netroflash

USA . 1,100 parts In-Stock

1+ parts

-

100+ parts

$1.833

1k+ parts

$1.777

10k+ parts

$1.739

1,100

-

$1.833

$1.777

$1.739

UHIMA Technologies

Türkiye . 940 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

940

-

-

-

-

Microchip USA

USA . 468 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

468

-

-

-

-

Overview

Unlock the power of reliable data storage with the CAT28F512H12 by Onsemi. Manufactured with top-quality materials and cutting-edge technology, this Flash Memory device offers unmatched performance and durability for a wide range of applications. Whether you're in need of secure data storage for automotive systems, industrial equipment, or consumer electronics, this product delivers seamless operation and efficient data access. Experience the value and benefits of choosing Onsemi's CAT28F512H12 - the ultimate solution for your memory storage needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable.

Surface Mount: YES

The surface mount feature allows for easy installation and space-saving on circuit boards.

Package Shape: RECTANGULAR

The rectangular package shape ensures efficient use of space in electronic devices.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for faster data transfer speeds.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V ensures compatibility with most electronic systems.

Power Supplies (V): 5

With a power supply of 5V, this product offers stable and reliable performance.

No. of Terminals: 32

The 32 terminals provide ample connectivity options for seamless integration.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline and thin profile design make this product ideal for compact devices.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C ensures consistent performance even in industrial settings.

Organization: 64KX8

The organization of 64KX8 offers efficient memory storage and retrieval capabilities.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature of 0°C ensures usability in a wide range of environments.

Terminal Finish: TIN

The tin terminal finish provides corrosion resistance and ensures long-lasting durability.

Terminal Position: DUAL

The dual terminal position offers flexible installation options for different applications.

Maximum Seated Height: 1.2 mm

The maximum seated height of 1.2mm allows for low-profile integration in devices.

Width: 8 mm

The 8mm width of this product enables easy fitting in compact spaces.

Minimum Supply Voltage (Vsup): 4.5 V

The minimum supply voltage of 4.5V ensures efficient power consumption.

Type: NOR TYPE

Being a NOR type Flash Memory, this product offers fast read and write speeds.

Length: 18.4 mm

The 18.4mm length allows for versatile placement options in electronic systems.

Programming Voltage (V): 12

The programming voltage of 12V enables quick and reliable data programming.

Temperature Grade: COMMERCIAL

The commercial temperature grade ensures reliable performance in standard operating conditions.

Technology: CMOS

The CMOS technology used in this product offers low power consumption and high efficiency.

Parallel or Serial: PARALLEL

The parallel data transfer mode allows for simultaneous and faster data access.

Terminal Form: GULL WING

The gull wing terminal form provides stability and ease of soldering during installation.

Maximum Supply Current: 30 mA

The maximum supply current of 30mA ensures efficient power usage in various applications.

No. of Words: 65536 words

With 65536 words of memory storage capacity, this product offers ample space for data storage.

Memory Width: 8

The 8-bit memory width provides efficient data processing and retrieval capabilities.

Terminal Pitch: 0.5 mm

The 0.5mm terminal pitch allows for precise and secure connections on circuit boards.

No. of Words Code: 64K

With a 64K word code, this product offers seamless integration with compatible systems.

Command User Interface: YES

The presence of a command user interface allows for easy and efficient operation of the device.

Moisture Sensitivity Level (MSL): 2A

With a moisture sensitivity level of 2A, this product is suitable for a wide range of environmental conditions.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage of 5.5V ensures stable and safe operation of the device.

Endurance: 100000 Write/Erase Cycles

With an endurance of 100000 write/erase cycles, this product offers long-lasting performance.

Memory Density: 524288 bit

The memory density of 524288 bits provides ample storage capacity for various data types.

Memory IC Type: FLASH

Being a Flash type memory IC, this product offers fast read and write speeds for efficient data processing.

Maximum Standby Current: 0.00001 Amp

The low maximum standby current of 0.00001 Amp helps in reducing power consumption during idle periods.

Maximum Access Time: 120 ns

With a maximum access time of 120ns, this product offers quick data retrieval for enhanced performance.

Technical Specifications

Flash Memory CAT28F512H12 attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Access Time:

120 ns

Command User Interface:

YES

Data Polling:

NO

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

2A

No. of Functions:

1

No. of Terminals:

32

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP32,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

NO

Type:

NOR TYPE

Width:

8 mm

Trade Compliance

CAT28F512H12 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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