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CAT28F512P-12

Onsemi

CAT28F512P-12 by Onsemi

CAT28F512P-12 by Onsemi is a 64KX8 NOR flash memory with 524288 bit density. It operates at 5V, has 100000 Write/Erase cycles endurance, and offers 120ns access time. Ideal for applications requiring high-speed parallel memory with reliable performance.

Median Price

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Lifecycle Status

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6

In-Stock Inventory

1k+

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Digiode

USA . 2,474 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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Vyrian

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Prism Electronics

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Bristol Electronics

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Dan-Mar Components

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AZTECH Wire

Italy . 621 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

Austria . 3,971 parts In-Stock

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TANS Electronics

Latvia . 3,385 parts In-Stock

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Kulean Microsystems

USA . 1,395 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 857 parts In-Stock

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Bastille Electronics

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Corohmni

South Africa . 200 parts In-Stock

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Overview

Unlock the power of reliable data storage with the CAT28F512P-12 by Onsemi. Crafted with precision and expertise, this Flash Memory device offers unparalleled performance and durability for a wide range of applications. Whether you're in need of secure data storage for consumer electronics or industrial equipment, this product delivers exceptional value and benefits. Trust in the quality and advantages that Onsemi brings to the table, and experience the difference with the CAT28F512P-12.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, making it ideal for portable devices.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V ensures compatibility with standard power sources, making it easy to integrate into existing systems.

Operating Mode: ASYNCHRONOUS

The asynchronous operation mode allows for independent read and write operations, enhancing overall performance and efficiency.

Organization: 64KX8

The organization of 64KX8 provides a large storage capacity in a compact form factor, making it suitable for storing a variety of data.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C ensures reliability in different environmental conditions, making it a versatile choice for various applications.

Endurance: 100000 Write/Erase Cycles

The high endurance of 100000 write/erase cycles ensures long-term reliability and durability, making it suitable for frequent data read/write operations.

Technical Specifications

Flash Memory CAT28F512P-12 attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Access Time:

120 ns

Command User Interface:

YES

Data Polling:

NO

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDIP-T32

JESD-609 Code:

e0

Length:

42.03 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Toggle Bit:

NO

Type:

NOR TYPE

Width:

15.24 mm

Trade Compliance

CAT28F512P-12 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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