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INDUSTRIAL Flash Memory 964

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
JS28F640J3F75G by Micron Technology

JS28F640J3F75G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Type: NOR TYPE;

75 ns

8

YES

YES

NO

R-PDSO-G56

67108864 bit

FLASH

16

64

56

4194304 words

4M

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

3/3.3

Not Qualified

YES

128K

.00012 Amp

Flash Memories

54 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

NOR TYPE

PC28F640P33TF60A by Micron Technology

PC28F640P33TF60A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: BGA; Package Shape: SQUARE; Minimum Operating Temperature: -40 Cel;

60 ns

TOP

YES

YES

NO

S-PBGA-B64

67108864 bit

FLASH

16

4,63

64

4194304 words

4M

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

BGA

BGA64,8X8,40

SQUARE

GRID ARRAY

8

PARALLEL

2.5/3.3

Not Qualified

16K,64K

.002 Amp

Flash Memories

28 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

NOR TYPE

JS28F640P33TF70A by Micron Technology

JS28F640P33TF70A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Standby Current: .002 Amp;

70 ns

TOP

YES

YES

NO

R-PDSO-G56

67108864 bit

FLASH

16

4,63

56

4194304 words

4M

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

2.5/3.3

Not Qualified

16K,64K

.002 Amp

Flash Memories

28 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

NOR TYPE

RD48F4400P0VBQ0A by Micron Technology

RD48F4400P0VBQ0A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 88; Package Code: FBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

85 ns

BOTTOM

YES

YES

NO

R-PBGA-B88

536870912 bit

FLASH

16

8, 510

88

33554432 words

32M

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

FBGA

BGA88,8X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4

PARALLEL

1.8,1.8/3.3

Not Qualified

16K,64K

.000005 Amp

Flash Memories

51 mA

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

NOR TYPE

RC48F4400P0VB00A by Micron Technology

RC48F4400P0VB00A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: BGA; Package Shape: SQUARE; Type: NOR TYPE;

85 ns

BOTTOM

YES

YES

NO

S-PBGA-B64

536870912 bit

FLASH

16

8, 510

64

33554432 words

32M

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

BGA

BGA64,8X8,40

SQUARE

GRID ARRAY

4

PARALLEL

1.8,1.8/3.3

Not Qualified

16K,64K

.000005 Amp

Flash Memories

51 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

NOR TYPE

JS48F4400P0VB00A by Micron Technology

JS48F4400P0VB00A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

95 ns

BOTTOM

YES

YES

NO

R-PDSO-G56

536870912 bit

FLASH

16

8, 510

56

33554432 words

32M

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4

PARALLEL

1.8,1.8/3.3

Not Qualified

16K,64K

.000005 Amp

Flash Memories

51 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

NOR TYPE

SST39SF040-55-4I-WHE-T by Microchip Technology

SST39SF040-55-4I-WHE-T

Microchip Technology

SST39SF040-55-4I-WHE-T by Microchip: 512Kx8 NOR Flash Memory with 3-STATE output, operates at -40 to 85 °C. Ideal for industrial applications, offering 100000 Write/Erase Cycles and fast access time of 55 ns.

55 ns

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G32

12.4 mm

4194304 bit

FLASH

8

1

1

128

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

5

5

Not Qualified

1.2 mm

4K

.0001 Amp

Flash Memories

35 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

SST39SF040-70-4I-WHE-T by Microchip Technology

SST39SF040-70-4I-WHE-T

Microchip Technology

SST39SF040-70-4I-WHE-T by Microchip: NOR flash memory with 512Kx8 organization, 128 sectors of 4K words each. Operating at -40 to 85°C, it offers fast access time of 70ns and endurance up to 100k cycles. Ideal for industrial applications requiring reliable non-volatile memory storage.

70 ns

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G32

e3

12.4 mm

4194304 bit

FLASH

8

3

1

1

128

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

5

5

Not Qualified

1.2 mm

4K

.0001 Amp

Flash Memories

35 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

30

YES

NOR TYPE

8 mm

JS28F320J3F75E by Micron Technology

JS28F320J3F75E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH;

75 ns

8

YES

YES

NO

R-PDSO-G56

33554432 bit

FLASH

16

32

56

2097152 words

2M

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

260

3/3.3

Not Qualified

YES

128K

.00012 Amp

Flash Memories

80 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

PC28F320J3F75E by Micron Technology

PC28F320J3F75E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: BGA; Package Shape: SQUARE; Sector Size (Words): 128K;

75 ns

8

YES

YES

NO

S-PBGA-B64

33554432 bit

FLASH

16

32

64

2097152 words

2M

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

BGA

BGA64,8X8,40

SQUARE

GRID ARRAY

4/8

PARALLEL

260

3/3.3

Not Qualified

YES

128K

.00012 Amp

Flash Memories

80 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

JS28F128J3F75H by Micron Technology

JS28F128J3F75H

Micron Technology

Micron Technology's JS28F128J3F75H is a NOR flash memory with 8MX16 organization, 128 sectors, and 8388608 words. It operates at temperatures from -40 to 85°C and has a max access time of 75ns. Ideal for industrial applications requiring high-density parallel flash memory solutions.

75 ns

8

YES

YES

NO

R-PDSO-G56

134217728 bit

FLASH

16

128

56

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

260

3/3.3

Not Qualified

YES

128K

.00012 Amp

Flash Memories

80 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

PC28F128J3F75D by Micron Technology

PC28F128J3F75D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: BGA; Package Shape: SQUARE; Maximum Supply Current: 80 mA;

75 ns

8

YES

YES

NO

S-PBGA-B64

134217728 bit

FLASH

16

128

64

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

BGA

BGA64,8X8,40

SQUARE

GRID ARRAY

4/8

PARALLEL

260

3/3.3

Not Qualified

YES

128K

.00012 Amp

Flash Memories

80 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

JS28F640P30BF75A by Micron Technology

JS28F640P30BF75A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Sector Size (Words): 16K,64K;

75 ns

BOTTOM

YES

YES

NO

R-PDSO-G56

67108864 bit

FLASH

16

4,63

56

4194304 words

4M

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

260

1.8,1.8/3.3

Not Qualified

16K,64K

.000055 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

JS28F640P30BF75D by Micron Technology

JS28F640P30BF75D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; No. of Sectors/Size: 4,63;

75 ns

BOTTOM

YES

YES

NO

R-PDSO-G56

67108864 bit

FLASH

16

4,63

56

4194304 words

4M

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

1.8,1.8/3.3

Not Qualified

16K,64K

.000055 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

NOR TYPE

JS28F640P30TF75A by Micron Technology

JS28F640P30TF75A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Terminal Pitch: .5 mm;

75 ns

TOP

YES

YES

NO

R-PDSO-G56

67108864 bit

FLASH

16

4,63

56

4194304 words

4M

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

1.8,1.8/3.3

Not Qualified

16K,64K

.000055 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

NOR TYPE

RC28F640P30TF65A by Micron Technology

RC28F640P30TF65A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: BGA; Package Shape: SQUARE; Sector Size (Words): 16K,64K;

65 ns

TOP

YES

YES

NO

S-PBGA-B64

67108864 bit

FLASH

16

4,63

64

4194304 words

4M

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

BGA

BGA64,8X8,40

SQUARE

GRID ARRAY

8

PARALLEL

1.8,1.8/3.3

Not Qualified

16K,64K

.000055 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

NOR TYPE

PC28F128P30BF65E by Micron Technology

PC28F128P30BF65E

Micron Technology

Micron Technology's PC28F128P30BF65E is an 8MX16 NOR flash memory with 64 terminals, operating at -40 to 85°C. It features a 16K/64K sector size and 1.8V power supply, suitable for industrial applications requiring fast access times of 65ns and low standby current of 0.000055A.

65 ns

BOTTOM

YES

YES

NO

S-PBGA-B64

134217728 bit

FLASH

16

4,127

64

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

BGA

BGA64,8X8,40

SQUARE

GRID ARRAY

8

PARALLEL

1.8,1.8/3.3

Not Qualified

16K,64K

.000055 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

NOR TYPE

MT29F8G08ABCBBH1-12IT:B by Micron Technology

MT29F8G08ABCBBH1-12IT:B

Micron Technology

Micron Technology's MT29F8G08ABCBBH1-12IT:B is a 1.8V SLC NAND flash memory with 1GX8 organization, 4K page size, and 512K sector size. It operates in industrial temperature range (-40 to 85 °C) with parallel interface and 100 terminals on a grid array package. Ideal for applications requiring high-density memory storage and fast access times.

20 ns

YES

NO

R-PBGA-B100

8589934592 bit

FLASH

8

2K

100

1073741824 words

1G

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

4K

PARALLEL

1.8

Not Qualified

YES

512K

.00005 Amp

Flash Memories

50 mA

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F4G01AAADDHC-IT:D by Micron Technology

MT29F4G01AAADDHC-IT:D

Micron Technology

MT29F4G01AAADDHC-IT:D by Micron Technology is a flash memory with 512MX8 organization and 4294967296 bit memory density. It operates at temperatures ranging from -40 to 85 °C and has a max clock frequency of 50 MHz. It is commonly used in industrial applications requiring high endurance and reliable data storage.

50 MHz

10

100000 Write/Erase Cycles

R-PBGA-B63

4294967296 bit

FLASH

8

63

536870912 words

512M

85 Cel

-40 Cel

512MX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

SERIAL

260

3/3.3

Not Qualified

SPI

.00005 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

30

SLC NAND TYPE

HARDWARE

MT29F256G08AUAAAC5-IT:A by Micron Technology

MT29F256G08AUAAAC5-IT:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 52; Package Code: LGA; Technology: CMOS; Minimum Operating Temperature: -40 Cel;

20 ns

YES

NO

274877906944 bit

FLASH

32K

52

85 Cel

-40 Cel

PLASTIC/EPOXY

LGA

LGA52(UNSPEC)

GRID ARRAY

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

NO LEAD

BOTTOM

NO

SLC NAND TYPE

MT29F64G08AECABH1-10IT:A by Micron Technology

MT29F64G08AECABH1-10IT:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Command User Interface: YES;

20 ns

YES

NO

R-PBGA-B100

68719476736 bit

FLASH

8

8K

100

8589934592 words

8G

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F256G08AUCABH3-10IT:A by Micron Technology

MT29F256G08AUCABH3-10IT:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA100,10X17,40;

20 ns

YES

NO

R-PBGA-B100

274877906944 bit

FLASH

32K

100

85 Cel

-40 Cel

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AJAAAWP-IT:A by Micron Technology

MT29F128G08AJAAAWP-IT:A

Micron Technology

MT29F128G08AJAAAWP-IT:A by Micron Technology is a 16GX8 SLC NAND flash memory with 1M sector size. It operates at -40 to 85 °C, has 48 terminals, and consumes up to 50 mA current. Ideal for industrial applications requiring fast access time of 20 ns and high memory density of 137438953472 bit.

20 ns

YES

NO

R-PDSO-G48

137438953472 bit

FLASH

8

16K

48

17179869184 words

16G

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F128G08AKAAAC5-IT:A by Micron Technology

MT29F128G08AKAAAC5-IT:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 52; Package Code: LGA; Toggle Bit: NO; Maximum Access Time: 20 ns;

20 ns

YES

NO

137438953472 bit

FLASH

8

16K

52

17179869184 words

16G

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

LGA

LGA52(UNSPEC)

GRID ARRAY

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

NO LEAD

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AMAAAC5-IT:A by Micron Technology

MT29F128G08AMAAAC5-IT:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 52; Package Code: LGA; Toggle Bit: NO; Maximum Standby Current: .00001 Amp;

20 ns

YES

NO

137438953472 bit

FLASH

8

16K

52

17179869184 words

16G

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

LGA

LGA52(UNSPEC)

GRID ARRAY

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

NO LEAD

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AMCABH2-10IT:A by Micron Technology

MT29F128G08AMCABH2-10IT:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Ready or Busy: YES;

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

JS28F00AP30TFA by Micron Technology

JS28F00AP30TFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; No. of Words Code: 64M;

110 ns

TOP

YES

YES

NO

R-PDSO-G56

1073741824 bit

FLASH

16

4,1023

56

67108864 words

64M

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

16

PARALLEL

1.8,1.8/3.3

Not Qualified

16K,64K

.00024 Amp

Flash Memories

31 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

NOR TYPE

MT29F1G16ABBDAH4-ITX:D by Micron Technology

MT29F1G16ABBDAH4-ITX:D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

25 ns

YES

NO

R-PBGA-B63

e1

FLASH

16

1K

63

67108864 words

64M

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

1K

PARALLEL

260

1.8

Not Qualified

YES

64K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

SST39SF010A-70-4I-WHE-T by Microchip Technology

SST39SF010A-70-4I-WHE-T

Microchip Technology

SST39SF010A-70-4I-WHE-T by Microchip: 128KX8 NOR Flash Memory with 3-STATE output, operates at -40 to 85 °C. Ideal for industrial applications, featuring 100000 Write/Erase Cycles and 70 ns Access Time. Package style is small outline, thin profile with shrink pitch.

70 ns

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G32

e3

12.4 mm

1048576 bit

FLASH

8

3

1

1

32

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

5

5

Not Qualified

1.2 mm

4K

.0001 Amp

Flash Memories

35 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

SST39VF3201C-70-4I-B3KE-T by Microchip Technology

SST39VF3201C-70-4I-B3KE-T

Microchip Technology

SST39VF3201C-70-4I-B3KE-T by Microchip: 2MX16 NOR Flash Memory with 3V supply, 70ns access time. Ideal for industrial applications requiring high endurance (100K cycles) and fast data polling. Features 8 sectors, 2097152 words, and common flash interface for parallel programming.

70 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

33554432 bit

FLASH

16

1

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

4K,32K

.00005 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

SST39VF3202C-70-4I-B3KE-T by Microchip Technology

SST39VF3202C-70-4I-B3KE-T

Microchip Technology

SST39VF3202C-70-4I-B3KE-T by Microchip: 2MX16 NOR Flash Memory with 3V supply, 70ns access time. Ideal for industrial applications, featuring 100K cycles endurance and 2097152 words capacity in a compact GRID ARRAY package.

70 ns

TOP BOOT BLOCK

TOP

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

33554432 bit

FLASH

16

1

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

4K,32K

.00005 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

SST38VF6401-90-5I-B3KE-T by Microchip Technology

SST38VF6401-90-5I-B3KE-T

Microchip Technology

SST38VF6401-90-5I-B3KE-T by Microchip: 4MX16 NOR Flash Memory with 1K sectors, 4194304 words, and 100000 Write/Erase Cycles. Ideal for industrial applications requiring fast access time (90 ns) and low standby current (0.00003 Amp).

90 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

67108864 bit

FLASH

16

1

1

1K

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

4K

.00003 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

MT29F2G08ABAEAH4-ITX:E by Micron Technology

MT29F2G08ABAEAH4-ITX:E

Micron Technology

MT29F2G08ABAEAH4-ITX:E by Micron Technology is a 256MX8 SLC NAND flash memory with 2K sectors, 128K sector size, and 268M words. It operates at -40 to 85 °C, with 0.8mm terminal pitch and 0.0001A standby current. Ideal for industrial applications requiring fast access time and low power consumption.

25 ns

YES

NO

R-PBGA-B63

2147483648 bit

FLASH

8

2K

63

268435456 words

256M

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F2G08ABBEAH4-ITX:E by Micron Technology

MT29F2G08ABBEAH4-ITX:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

25 ns

YES

NO

R-PBGA-B63

2147483648 bit

FLASH

8

2K

63

268435456 words

256M

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

1.8

Not Qualified

YES

128K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F4G08ABADAH4-ITX:D by Micron Technology

MT29F4G08ABADAH4-ITX:D

Micron Technology

MT29F4G08ABADAH4-ITX:D by Micron Technology is a 512Mx8 SLC NAND flash memory with 4K sectors and 128K word sector size. Operating at -40 to 85°C, it has a peak reflow temp of 260°C and consumes max 35mA current. Ideal for industrial applications requiring fast access time of 25ns and high memory density of 4294967296 bits.

25 ns

YES

NO

R-PBGA-B63

e1

4294967296 bit

FLASH

8

4K

63

536870912 words

512M

85 Cel

-40 Cel

512MX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

260

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

MT29F64G08AECABH1-10ITZ:A by Micron Technology

MT29F64G08AECABH1-10ITZ:A

Micron Technology

MT29F64G08AECABH1-10ITZ:A by Micron Technology is an 8GX8 SLC NAND flash memory with 8K sectors. Operating at -40 to 85 °C, it has a memory density of 68719476736 bit and max access time of 20 ns. Ideal for industrial applications requiring fast, reliable data storage with low standby current consumption.

20 ns

YES

NO

R-PBGA-B100

68719476736 bit

FLASH

8

8K

100

8589934592 words

8G

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AKAAAC5-ITZ:A by Micron Technology

MT29F128G08AKAAAC5-ITZ:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 52; Package Code: LGA; Ready or Busy: YES; Memory Width: 8;

20 ns

YES

NO

137438953472 bit

FLASH

8

16K

52

17179869184 words

16G

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

LGA

LGA52(UNSPEC)

GRID ARRAY

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

NO LEAD

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AKCABH2-10ITZ:A by Micron Technology

MT29F128G08AKCABH2-10ITZ:A

Micron Technology

Micron Technology's MT29F128G08AKCABH2-10ITZ:A is a 16GX8 SLC NAND flash memory with 1M sector size and 8K page size. It operates at industrial temperature grade, with parallel interface and 100 terminals in a grid array package. Ideal for applications requiring high-speed data storage and retrieval.

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AMAAAC5-ITZ:A by Micron Technology

MT29F128G08AMAAAC5-ITZ:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 52; Package Code: LGA; Maximum Access Time: 20 ns; Type: SLC NAND TYPE;

20 ns

YES

NO

137438953472 bit

FLASH

8

16K

52

17179869184 words

16G

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

LGA

LGA52(UNSPEC)

GRID ARRAY

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

NO LEAD

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AMCABH2-10ITZ:A by Micron Technology

MT29F128G08AMCABH2-10ITZ:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Power Supplies (V): 1.8,3/3.3;

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

260

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

30

NO

SLC NAND TYPE

MT29F256G08AUAAAC5-ITZ:A by Micron Technology

MT29F256G08AUAAAC5-ITZ:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 52; Package Code: LGA; Data Polling: NO; Surface Mount: YES;

20 ns

YES

NO

274877906944 bit

FLASH

32K

52

85 Cel

-40 Cel

PLASTIC/EPOXY

LGA

LGA52(UNSPEC)

GRID ARRAY

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

NO LEAD

BOTTOM

NO

SLC NAND TYPE

MT29F256G08AUCABH3-10ITZ:A by Micron Technology

MT29F256G08AUCABH3-10ITZ:A

Micron Technology

Micron Technology's MT29F256G08AUCABH3-10ITZ:A is a SLC NAND flash memory with 32K sectors, 8K page size, and 1M sector size. It operates at temperatures from -40 to 85°C and has a max access time of 20 ns. Ideal for industrial applications requiring high-density memory with low standby current.

20 ns

YES

NO

R-PBGA-B100

274877906944 bit

FLASH

32K

100

85 Cel

-40 Cel

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

N25Q064A13E14D0E by Micron Technology

N25Q064A13E14D0E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 108 MHz;

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

67108864 bit

FLASH

8

24

8388608 words

8M

85 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

BGA

BGA24,4X6,40

RECTANGULAR

GRID ARRAY

SERIAL

3/3.3

Not Qualified

SPI

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

HARDWARE/SOFTWARE

M29W128GL70ZA6DE by Micron Technology

M29W128GL70ZA6DE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: BGA; Package Shape: SQUARE; Terminal Position: BOTTOM;

70 ns

8

YES

YES

YES

S-PBGA-B64

134217728 bit

FLASH

16

128

64

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

BGA

BGA64,8X8,40

SQUARE

GRID ARRAY

8/16

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

YES

NOR TYPE

M29W128GSH70N6E by Micron Technology

M29W128GSH70N6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; No. of Sectors/Size: 128;

70 ns

8

YES

YES

YES

R-PDSO-G56

134217728 bit

FLASH

16

128

56

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

YES

NOR TYPE

M29W128GSH70ZA6E by Micron Technology

M29W128GSH70ZA6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: BGA; Package Shape: SQUARE; No. of Words Code: 8M;

70 ns

8

YES

YES

YES

S-PBGA-B64

134217728 bit

FLASH

16

128

64

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

BGA

BGA64,8X8,40

SQUARE

GRID ARRAY

8/16

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

YES

NOR TYPE

M29W128GSH70ZS6E by Micron Technology

M29W128GSH70ZS6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: BGA; Package Shape: SQUARE; No. of Words: 8388608 words;

70 ns

8

YES

YES

YES

S-PBGA-B64

134217728 bit

FLASH

16

128

64

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

BGA

BGA64,8X8,40

SQUARE

GRID ARRAY

8/16

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

YES

NOR TYPE

M29W128GSL70N6E by Micron Technology

M29W128GSL70N6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Standby Current: .0001 Amp;

70 ns

8

YES

YES

YES

R-PDSO-G56

134217728 bit

FLASH

16

128

56

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

YES

NOR TYPE