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PC28F128P30BF65E

Micron Technology

PC28F128P30BF65E by Micron Technology

Micron Technology's PC28F128P30BF65E is an 8MX16 NOR flash memory with 64 terminals, operating at -40 to 85°C. It features a 16K/64K sector size and 1.8V power supply, suitable for industrial applications requiring fast access times of 65ns and low standby current of 0.000055A.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 5,073 parts In-Stock

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Vyrian

USA . 2,240 parts In-Stock

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Digiode

USA . 551 parts In-Stock

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551

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Nova Conductors

Japan . 100 parts In-Stock

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AZTECH Wire

Italy . 203 parts In-Stock

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$7.540

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Ampacity Inc.

Singapore . 1,397 parts In-Stock

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$27.000

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Component Stockers USA

USA . 490 parts In-Stock

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$99.990

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Perfect Parts

USA . 638 parts In-Stock

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Aranea Global

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Corphita

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Microchip USA

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Overview

Experience lightning-fast data storage and retrieval with the Micron Technology PC28F128P30BF65E Flash Memory. With a focus on quality and reliability, Micron is a trusted manufacturer in the industry. This versatile product is perfect for a wide range of applications, offering customers unparalleled value and benefits. Say goodbye to slow loading times and hello to seamless performance with the Micron Technology PC28F128P30BF65E.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this flash memory durable and lightweight, ideal for portable devices.

Surface Mount: YES

With the surface mount option, this flash memory can easily be installed on PCBs, saving space and making it suitable for compact electronic devices.

Package Shape: SQUARE

The square package shape offers a standardized form factor, making it easier to integrate this flash memory into various electronic designs.

Power Supplies (V): 1.8,1.8/3.3

The multiple power supply options of 1.8V and 1.8/3.3V provide flexibility in power requirements, allowing compatibility with different systems.

No. of Terminals: 64

The 64 terminals provide a sufficient number of connections for efficient data transfer and communication with the flash memory.

Package Style (Meter): GRID ARRAY

The grid array package style offers a high terminal density, enabling a compact design and efficient signal routing in the circuit.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this flash memory can withstand harsh environmental conditions and extended usage.

Organization: 8MX16

The organization of 8MX16 allows for a large capacity storage of data, suitable for applications that require high memory density.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures that this flash memory can function reliably in cold environments.

No. of Sectors/Size: 4,127

The high number of sectors and sizes provide ample storage space for data organization and management, enhancing the efficiency of the flash memory.

Terminal Position: BOTTOM

The bottom terminal position simplifies the installation process and ensures a secure connection when integrating this flash memory into electronic devices.

Page Size (words): 8

The page size of 8 words allows for efficient data transfer and programming, enhancing the performance of the flash memory.

Type: NOR TYPE

The NOR type architecture offers fast read speeds and random access capabilities, making this flash memory suitable for applications that require quick data retrieval.

Common Flash Interface: YES

The common flash interface ensures compatibility with standard protocols and interfaces, facilitating integration with various systems and devices.

Temperature Grade: INDUSTRIAL

The industrial temperature grade designates this flash memory for use in rugged environments and high-temperature applications, ensuring reliability and durability.

Technology: CMOS

The CMOS technology used in this flash memory ensures low power consumption and high speed operation, making it energy-efficient and fast.

Parallel or Serial: PARALLEL

The parallel interface allows for simultaneous data transfer, enabling high-speed communication and performance in applications that require rapid data access.

Terminal Form: BALL

The ball terminal form offers a reliable and secure connection, ensuring stable operation and data integrity in the flash memory.

Sector Size (Words): 16K,64K

The multiple sector sizes of 16K and 64K provide flexibility in data storage and organization, accommodating various file sizes and system requirements.

Maximum Supply Current: 50 mA

With a maximum supply current of 50mA, this flash memory operates efficiently within a specified power range, ensuring stable performance and reliability.

No. of Words: 8388608 words

The large number of words in this flash memory allows for extensive data storage and high memory capacity, suitable for applications that require large amounts of information.

Memory Width: 16

The memory width of 16 bits enables the efficient transfer of data and instructions, enhancing the speed and performance of this flash memory.

Terminal Pitch: 1 mm

The 1mm terminal pitch provides a standardized spacing for connections, facilitating the integration of this flash memory into electronic designs.

No. of Words Code: 8M

The 8M words code represents the high capacity and extensive memory storage capability of this flash memory, suitable for demanding applications.

Command User Interface: YES

The command user interface allows for easy programming and control of the flash memory, enhancing usability and customization options.

Boot Block: BOTTOM

The bottom boot block feature ensures quick and convenient access to essential system information and code, improving the startup and operation of devices using this flash memory.

Memory Density: 134217728 bit

The high memory density of 134217728 bits offers ample storage space for data-intensive applications, making this flash memory an excellent choice for high-capacity storage requirements.

Memory IC Type: FLASH

The flash memory IC type provides non-volatile storage capabilities, allowing data retention even when power is removed, ensuring data integrity and reliability.

Maximum Standby Current: 0.000055 Amp

With a low maximum standby current of 0.000055 Amp, this flash memory consumes minimal power when in standby mode, maximizing energy efficiency and battery life.

Maximum Access Time: 65 ns

The fast maximum access time of 65 nanoseconds ensures quick data retrieval and processing, making this flash memory suitable for high-performance applications.

Technical Specifications

Flash Memory PC28F128P30BF65E attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

65 ns

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

S-PBGA-B64

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Sectors/Size:

4,127

No. of Terminals:

64

No. of Words:

8388608 words

No. of Words Code:

8M

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Equivalence Code:

BGA64,8X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY

Page Size (words):

8

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8,1.8/3.3

Qualification:

Not Qualified

Sector Size (Words):

16K,64K

Maximum Standby Current:

.000055 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

50 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

NOR TYPE

Trade Compliance

PC28F128P30BF65E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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