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MT29F4G01AAADDHC-IT:D

Micron Technology

MT29F4G01AAADDHC-IT:D by Micron Technology

MT29F4G01AAADDHC-IT:D by Micron Technology is a flash memory with 512MX8 organization and 4294967296 bit memory density. It operates at temperatures ranging from -40 to 85 °C and has a max clock frequency of 50 MHz. It is commonly used in industrial applications requiring high endurance and reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 4,627 parts In-Stock

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4,627

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Vyrian

USA . 3,859 parts In-Stock

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3,859

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Digiode

USA . 2,407 parts In-Stock

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2,407

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Nova Conductors

Japan . 870 parts In-Stock

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870

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,512 parts In-Stock

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$2.000

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1,512

$2.000

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Andel Nordic

Denmark . 4,943 parts In-Stock

1+ parts

$9.568

100+ parts

-

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$9.185

10k+ parts

$9.185

4,943

$9.568

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$9.185

$9.185

AZTECH Wire

Italy . 727 parts In-Stock

1+ parts

$9.871

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727

$9.871

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A-Z Elektronik GmbH

Germany . 2,586 parts In-Stock

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2,586

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Corphita

USA . 986 parts In-Stock

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986

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Microchip USA

USA . 460 parts In-Stock

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460

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Speed Components Ltd (Excess)

Israel . 272 parts In-Stock

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272

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Discover the ultimate solution for your flash memory needs with the MT29F4G01AAADDHC-IT:D by Micron Technology. As a leading manufacturer in the industry, Micron Technology guarantees unparalleled quality and reliability. Designed for a wide range of applications, this flash memory offers exceptional value and benefits to customers. With its high endurance of 100,000 write/erase cycles and maximum clock frequency of 50 MHz, it ensures optimal performance and efficiency. Experience the advantages of this product and unlock endless possibilities for your storage requirements.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, perfect for portable electronic devices.

Surface Mount: YES

Being surface mountable allows for easy installation and integration into circuit boards.

Power Supplies (V): 3/3.3

Compatible with common power supply voltages, providing flexibility for different electronic systems.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures reliable performance even in harsh environments.

Organization: 512MX8

High organization capacity allows for efficient data storage and retrieval processes.

Write Protection: HARDWARE

Hardware write protection offers an added layer of security for stored data.

Technology: CMOS

CMOS technology ensures low power consumption and high-speed performance.

Memory Density: 4294967296 bit

High memory density provides ample storage space for large amounts of data.

Technical Specifications

Flash Memory MT29F4G01AAADDHC-IT:D attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

50 MHz

Minimum Data Retention Time:

10

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PBGA-B63

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

63

No. of Words:

536870912 words

No. of Words Code:

512M

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA63,10X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Serial Bus Type:

SPI

Maximum Standby Current:

.00005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Type:

SLC NAND TYPE

Write Protection:

HARDWARE

Trade Compliance

MT29F4G01AAADDHC-IT:D Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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