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SST39SF040-70-4I-WHE-T

Microchip Technology

SST39SF040-70-4I-WHE-T by Microchip Technology

SST39SF040-70-4I-WHE-T by Microchip: NOR flash memory with 512Kx8 organization, 128 sectors of 4K words each. Operating at -40 to 85°C, it offers fast access time of 70ns and endurance up to 100k cycles. Ideal for industrial applications requiring reliable non-volatile memory storage.

Median Price

$2.560

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

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$2.560

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10

$2.560

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Vyrian

USA . 6,012 parts In-Stock

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6,012

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$2.509

100+ parts

-

1k+ parts

$2.408

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1,000

$2.509

-

$2.408

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Continental Prestige Electronics

USA . 5,041 parts In-Stock

1+ parts

$2.560

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$2.509

5,041

$2.560

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$2.509

Argo Parts USA

USA . 359 parts In-Stock

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$2.560

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359

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Ampacity Inc.

Singapore . 1,441 parts In-Stock

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$7.000

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Microchip USA

USA . 3,871 parts In-Stock

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$12.189

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$12.189

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AZTECH Wire

Italy . 685 parts In-Stock

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$19.861

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685

$19.861

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LMD Electronica

Estonia . 7,601 parts In-Stock

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Montano Global Distributors

Canada . 6,893 parts In-Stock

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LOOK Integrated Logistics

Peru . 6,607 parts In-Stock

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NIA Electronics

USA . 4,327 parts In-Stock

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Ledger Components

France . 4,327 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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Overview

Unlock the power of reliable and high-performance flash memory with the Microchip Technology SST39SF040-70-4I-WHE-T. With a reputation for quality and innovation, Microchip Technology delivers cutting-edge solutions for a wide range of applications. This Flash Memory device offers 512Kx8 organization, 128 sectors, and 524288 words, ensuring optimal performance and durability. Experience fast access times, low standby current, and 100000 write/erase cycles, providing exceptional value and benefits to customers. Trust Microchip Technology for all your memory needs and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the flash memory, ensuring a longer lifespan.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent read and write operations, increasing efficiency and speed.

Output Characteristics: 3-STATE

3-STATE output allows for multiple devices to share the same bus without interference, enhancing flexibility in the system design.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, this flash memory can withstand harsh environmental conditions and extended operating temperatures.

Endurance: 100000 Write/Erase Cycles

With a high endurance rating, this flash memory can handle frequent read and write operations without degradation, ensuring reliability and longevity.

Memory IC Type: FLASH

Being a flash memory IC, this product offers non-volatile storage capabilities, making it ideal for storing critical data that needs to be retained even when power is turned off.

Technical Specifications

Flash Memory SST39SF040-70-4I-WHE-T attributes and parameters. Explore more Flash Memory devices from Microchip Technology

Specs

Maximum Access Time:

70 ns

Command User Interface:

YES

Data Polling:

YES

Minimum Data Retention Time:

100

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

e3

Length:

12.4 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Sectors/Size:

128

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP32,.56,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

4K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

YES

Type:

NOR TYPE

Width:

8 mm

Trade Compliance

SST39SF040-70-4I-WHE-T Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.1.A

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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