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MT29F2G08ABAEAH4-ITX:E

Micron Technology

MT29F2G08ABAEAH4-ITX:E by Micron Technology

MT29F2G08ABAEAH4-ITX:E by Micron Technology is a 256MX8 SLC NAND flash memory with 2K sectors, 128K sector size, and 268M words. It operates at -40 to 85 °C, with 0.8mm terminal pitch and 0.0001A standby current. Ideal for industrial applications requiring fast access time and low power consumption.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 4,239 parts In-Stock

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Vyrian

USA . 2,095 parts In-Stock

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2,095

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Digiode

USA . 263 parts In-Stock

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263

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Cyclops Electronics Ltd

UK . 59 parts In-Stock

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59

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,575 parts In-Stock

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$4.000

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1,575

$4.000

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AZTECH Wire

Italy . 366 parts In-Stock

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$19.070

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366

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Component Stockers USA

USA . 732 parts In-Stock

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$99.990

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732

$99.990

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Kepictronics

USA . 4,043 parts In-Stock

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Perfect Parts

USA . 3,651 parts In-Stock

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Futuretech Components

Singapore . 1,000 parts In-Stock

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1,000

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Corphita

USA . 945 parts In-Stock

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945

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Microchip USA

USA . 474 parts In-Stock

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474

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Unlock the power of reliable and high-quality flash memory with the MT29F2G08ABAEAH4-ITX:E by Micron Technology. Designed with precision and expertise, this flash memory device offers unparalleled performance and durability for a wide range of applications. Whether you're looking to enhance the speed and efficiency of your electronics or store critical data with peace of mind, this product delivers exceptional value and benefits. Trust in Micron Technology to provide cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and reliability for the flash memory product, ensuring it can withstand various environmental conditions.

Surface Mount: YES

Surface mount capability allows for easy installation on circuit boards, making the integration of this flash memory product efficient and convenient.

Power Supplies (V): 3/3.3

Operates on a standard power supply of 3/3.3 volts, making it compatible with a wide range of systems and devices.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this flash memory product is suitable for industrial applications where high temperatures may be encountered.

Organization: 256MX8

The 256MX8 organization provides a high memory capacity, allowing for efficient storage and retrieval of data.

No. of Sectors/Size: 2K

Having 2K sectors allows for efficient data organization and management within the flash memory product, optimizing performance.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high-speed operation, making this flash memory product energy-efficient and reliable.

Memory Density: 2147483648 bit

With a high memory density of 2147483648 bits, this flash memory product offers ample storage capacity for a wide range of data and applications.

Technical Specifications

Flash Memory MT29F2G08ABAEAH4-ITX:E attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

25 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B63

Memory Density:

2147483648 bit

Memory IC Type:

Memory Width:

8

No. of Sectors/Size:

2K

No. of Terminals:

63

No. of Words:

268435456 words

No. of Words Code:

256M

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA63,10X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Page Size (words):

2K

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Ready or Busy:

YES

Sector Size (Words):

128K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

35 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

SLC NAND TYPE

Trade Compliance

MT29F2G08ABAEAH4-ITX:E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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